Metalorganic vapor phase epitaxy of Zn1−Fe Se films

Peck, John D.; Mountziaris, T. J.; Stoltz, S.; Petrou, A.; Mattocks, P.

doi:10.1016/s0022-0248(96)00638-0

Cited by 13 publications

(4 citation statements)

References 11 publications

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“…The overall reaction forming ZnSe is H 2 Se(g) + Zn(C 2 H 5 ) 2 (l) → ZnSe(s) + 2C 2 H 6 (g). It occurs spontaneously at room temperature and is exothermic with heat of reaction of −380 kJ/mol. , A similar reaction has been used by our group for growing single crystalline thin films of ZnSe by metallo-organic vapor-phase epitaxy (MOVPE) , and ZnSe nanoparticles by vapor-phase processing . In the experiments discussed here, the nucleation of ZnSe clusters most probably occurs simultaneously at different locations inside each droplet.…”

Section: Resultsmentioning

confidence: 82%

Synthesis and Size Control of Luminescent ZnSe Nanocrystals by a Microemulsion−Gas Contacting Technique

et al. 2004

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A scalable method for controlled synthesis of luminescent compound semiconductor nanocrystals (quantum dots) using microemulsion-gas contacting at room temperature is reported. The technique exploits the dispersed phase of a microemulsion to form numerous identical nanoreactors. ZnSe quantum dots were synthesized by reacting hydrogen selenide gas with diethylzinc dissolved in the heptane nanodroplets of a microemulsion formed by self-assembly of a poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) amphiphilic block copolymer in formamide. A single nanocrystal is grown in each nanodroplet, thus allowing good control of particle size by manipulation of the initial diethylzinc concentration in the heptane. The ZnSe nanocrystals exhibit size-dependent luminescence and excellent photostability.

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Section: Resultsmentioning

confidence: 82%

Synthesis and Size Control of Luminescent ZnSe Nanocrystals by a Microemulsion−Gas Contacting Technique

et al. 2004

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“…To date, a few solution-based routes have been reported for nearly spherical zinc blend (ZB) − ZnSe nanocrystals. Examples of 1D nanostructures based on ZnSe are nanowires grown by catalytic VLS, 6a, by electrochemical deposition, and by other physical techniques. , Solution-based approaches have also been reported, including solvothermal, 15c, micellar,31a and surfactant-based methods 31b…”

Section: Introductionmentioning

confidence: 99%

Shape and Phase Control of Colloidal ZnSe Nanocrystals

et al. 2005

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Shape-and phase-controlled ZnSe nanocrystals are synthesized in hot mixtures of long-chain alkylamines and alkylphosphines. The variation in the rate of precursor addition, down to low and controlled levels, allows the nucleation, as well as the growth of the nanocrystals, to switch between the wurtzite and the zinc blend structures. Such a level of control leads to a variety of shapes, from spheres to rods to threedimensional structures formed by rod sections interconnected through branching points. The temperatureand time-dependence of the chemical potentials for the monomer species in solution are the most relevant parameters involved in the growth mechanism.

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“…The experimental setup and details of the MOCVD technique used to grow these films have been reported elsewhere. 5,6 For a qualitative comparison, two other sets of ZnSe and ZnSe 1Ϫx Te x epilayers, grown on GaAs͑100͒ by MBE, were also studied. The growth times were 200, 300, 400, 500, and 600 s for the ZnSe series and 25, 50, 100, 150, and 200 s for the ZnSe 1Ϫx Te x series.…”

Section: Methodsmentioning

confidence: 99%

Studies of ZnSe-based semiconductor thin films using grazing incidence x-ray scattering and diffraction

Huang

Soo

Ming

et al. 1999

Journal of Applied Physics

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Grazing incidence x-ray scattering and x-ray diffraction techniques have been employed to investigate the microstructures in various ZnSe-based semiconductor thin films grown on GaAs substrates by molecular beam epitaxy and metalorganic chemical vapor deposition methods. The results are also used for a comparison of the interfacial roughness and overall quality of the II-VI thin films prepared by these two different growth methods. Structural parameters such as the interfacial roughness and layer thickness obtained from the scattering measurements and lattice constants obtained from the x-ray diffraction pattern around the GaAs͑004͒ peak can be correlated with the film deposition rate, compound composition, and lattice strain in the epilayers. We thus demonstrate that x-ray scattering techniques in conjunction with diffraction measurements are useful tools for nondestructive characterization of buried interfaces in semiconductor layer materials.

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Metalorganic vapor phase epitaxy of Zn1−Fe Se films

Cited by 13 publications

References 11 publications

Synthesis and Size Control of Luminescent ZnSe Nanocrystals by a Microemulsion−Gas Contacting Technique

Synthesis and Size Control of Luminescent ZnSe Nanocrystals by a Microemulsion−Gas Contacting Technique

Shape and Phase Control of Colloidal ZnSe Nanocrystals

Studies of ZnSe-based semiconductor thin films using grazing incidence x-ray scattering and diffraction

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