2003
DOI: 10.1016/s0039-6028(03)00386-8
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Metalorganic chemical vapor deposition of anatase titanium dioxide on Si: Modifying the interface by pre-oxidation

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Cited by 43 publications
(32 citation statements)
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“…Thus, it is very important to develop synthetic methods in which the crystalline phase as well as the size and morphology of the TiO 2 nanocrystals can be controlled. Up to now, many methods such as sol-gel [1], hydrothermal [2], microemulsion [3], chemical vapor deposition [4], inert-gas condensation [5], and pulsed laser deposition [6] have been established for the synthesis of TiO 2 with a certain crystalline phase. Among these preparation techniques, the relatively simple sol-gel method is the most widely used.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, it is very important to develop synthetic methods in which the crystalline phase as well as the size and morphology of the TiO 2 nanocrystals can be controlled. Up to now, many methods such as sol-gel [1], hydrothermal [2], microemulsion [3], chemical vapor deposition [4], inert-gas condensation [5], and pulsed laser deposition [6] have been established for the synthesis of TiO 2 with a certain crystalline phase. Among these preparation techniques, the relatively simple sol-gel method is the most widely used.…”
Section: Introductionmentioning
confidence: 99%
“…There are various deposition techniques, e.g. evaporation of metal followed by (plasma) oxidation [7][8][9], sputtering techniques [10,11], pulsed laser deposition [12], chemical vapour deposition (CVD) [13][14][15][16] and atomic layer deposition (ALD) [17,18]. A manufacturing process may also contain pre-and/or post-treatment such as heating/annealing in ambient gases.…”
Section: Introductionmentioning
confidence: 99%
“…Each Ti oxide is also a component in O 1s but the reliable literature data are rather poor for some of the oxides. The elsewhere reported shift in Ti 2p between Ti4+ and Ti3+ is from 1.2 eV [16] up to 1.6 eV [17,18] and between Ti4+ and Ti2+ from 2.4 eV [12] up to 3.1 eV [15]. The reported BE of components varies in the literature due to the calibration process and the charging effect.…”
Section: Resultsmentioning
confidence: 88%
“…There are also reported binding energies of Ti 2p3/2 and also O 1s for TiO2 at 458.5 eV-530 eV, Ti2O3 at about 455.6 eV-531.5 eV, and TiO at 454.3 eV-531.4 eV [16]. The BE of Ti 2p3/2 for TiO2 is commonly referred to values about 459 eV [17][18][19] and corresponding to O 1s to values about 530 eV [20] or 531 eV [18]. Photoelectrons from Ti 2p are spin splinted to Ti 2p3/2 and Ti 2p1/2 separated about 5.73 eV [17].…”
Section: Resultsmentioning
confidence: 99%