Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As x Sb1-xinterfaces

Abstract

InAs/GaSb type II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition (MOCVD). A plane of mixed As and Sb atoms connecting the InAs and GaSb layers was introduced to compensate the tensile strain created by the InAs layer in the SL. Characterizations of the samples by atomic force microscopy and high-resolution X-ray diffraction demonstrate flat surface morphology and good crystalline quality. The lattice mismatch of approximately 0.18% between the SL and GaSb substrate is small compared to the MOCVD-grown supperlattice samples reported to date in the literature. Considerable optical absorption in 2- to 8-μm infrared region has been realized.PACS: 78.67.Pt; 81.15.Gh; 63.22.Np; 81.05.Ea

Lattice vibration modes in type-II superlattice InAs/GaSb with no-common-atom interface and overlapping vibration spectra

“…[17][18][19][20][21][22][23][24] Most of them were performed in the (001) back-scattering geometry, with only one major Raman peak observed at around 236 238cm -1 assigned generally as a SL-LO mode. It was believed that the overlapping of the bulk phonon modes would make it difficult to resolve the confined and extended modes.…”

Chinese Herbal Medicine as an Adjunctive Therapy Improves the Survival Rate of Patients with Ischemic Heart Disease: A Nationwide Population-Based Cohort Study

“…The Shang Han Lun (Treatise on Febrile Diseases) notes that ZGCT activates heart-yang, restores the normal pulse, and nourishes heart-yin and blood [ 32 ]. ZGCT is widely used to treat palpitation in cases of tachycardia or bradycardia [ 32 – 34 ].…”

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

“…Nedelcu's group [154] proposed a complex scheme with a smooth InAs → InAsSb → InGaSb → GaSb → InGaSb → InAsSb → InAs structure achieving optimal morphology and low strain. In addition, Li et al [160,161] selected As 0.1 Sb 0.9 interfaces over InAsSb as an option to compensate the strain of the SLs on the GaSb substrate, which achieved a smooth surface with an root mean square (RMS) roughness of 0.7 nm and strong absorption coefficient in the MWIR region. Arikata et al [162] demonstrated LWIR T2SLs by applying simple InSb interface layers grown at 500 • C, which addressed the in-plane unbalanced strain, obtaining defect-free 200-period SLs with an intense PL peak at 6.1 µm and an external QE of 31% at 3.5 µm.…”