Abstract. Deeply etched 1-D third-order Bragg reflectors have been used as mirrors for broad-area semiconductor lasers operating at 975-nm wavelength. From a threshold and efficiency analysis, we determine the mirror reflectivity to be approximately 95%. The design of the GaAs-based laser structure features three InGaAs quantum wells placed close (0.5 m) to the surface in order to reduce the required etch depth and facilitate high-quality etching. Despite the shallow design and the proximity of the guided mode to the metal contact, the threshold current density (J th ϭ220 A/cm 2 for infinite cavity length) and internal loss (␣ i ϭ9Ϯ1 cm Ϫ1 ) are very low. © 1998 Society of Photo-Optical InstrumentationEngineers. [S0091-3286(98)00404-8]