Metallic nanofilms on Si(100) and SiO2 grown with a ruthenium precursor
Leonid Bolotov,
Yohei Kotsugi,
Tomohiro Tsugawa
et al.
Abstract:Ruthenium (Ru) nanofilms (<3 nm) were prepared using tricarbonyl(trimethylenemethane)ruthenium, Ru(TMM)(CO)3 at 230 oC. We show that the surface morphology and electrical conductance of Ru nanofilms are substantially different on H:Si(100) and SiO2/Si(100) substrates. Two-dimensional (2D) Ru nanofilms (~1 nm) were formed on H:Si(100), while thick (~3 nm) granular Ru films were formed on SiO2 substrate under the same growth conditions, as confirmed by cross-sectional transmission electron microscopy and x-ra… Show more
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