Metallic <i>vs.</i> semiconducting properties of quasi-one-dimensional tantalum selenide van der Waals nanoribbons

Kargar, Fariborz; Krayev, Andrey; Wurch, Michelle; Ghafouri, Yassamin; Debnath, Topojit; Wickramaratne, Darshana; Salguero, Tina T.; Lake, Roger K.; Bartels, Ludwig; Balandin, Alexander A.

doi:10.1039/d1nr07772d

Cited by 11 publications

(6 citation statements)

References 62 publications

(87 reference statements)

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“…Some selenium and iodide deficiencies are well‐known for metal chalcogenide compounds and are expected here. [ 45,46 ] The details of PXRD, SEM, EDS, and composition are provided in the Supporting Information.…”

Section: Methodsmentioning

confidence: 99%

Low‐Frequency Current Fluctuations in Quasi‐1D (TaSe₄)₂I Weyl Semimetal Nanoribbons

Ghosh

Kargar

et al. 2022

Adv Elect Materials

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quasi-1D material is defined as a Weyl semimetal with Weyl points located above and below the Fermi level, forming pairs with the opposite chiral charge. At temperatures below the Peierls transition temperature T P = 248-263 K, (TaSe 4 ) 2 I reveals the charge-density-wave (CDW) phase. [4,[8][9][10][11][12][13] The quantum CDW phase consists of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice. [14][15][16][17][18][19] It has been suggested that (TaSe 4 ) 2 I reveals a correlated topological phase, which arises from the formation of CDW in a Weyl semimetal. [11,12] This quasi-1D quantum material represents an interesting avenue for exploring the interplay of correlations and topology, as well as being an exciting system for examining new functionalities and electronic applications. [17,20] There are interesting applied physics and electronic materials aspects in the research of topological semimetals. The resistance and current density bottlenecks in downscaled metal interconnect motivate the search for new materials for the back end of the line (BEOL) interconnect applications. [21,22] When the interconnect linewidth scales below the electron mean free path, its resistivity increases in a power-law function due to Low-frequency current fluctuations, i.e., electronic noise, in quasi-1D (TaSe 4 ) 2 I Weyl semimetal nanoribbons are discussed. It is found that the noise spectral density is of the 1/f type and scales with the square of the current, S I ~ I 2 (f is the frequency). The noise spectral density increases by almost an order of magnitude and develops Lorentzian features near the temperature T ≈ 225 K. These spectral changes are attributed to the charge-density-wave phase transition even though the temperature of the noise maximum deviates from the reported Peierls transition temperature in bulk (TaSe 4 ) 2 I crystals. The noise level, normalized by the channel area, in these Weyl semimetal nanoribbons is surprisingly low, ≈10 −9 µm 2 Hz −1 at f = 10 Hz, when measured below and above the Peierls transition temperature. The obtained results shed light on the specifics of electron transport in quasi-1D topological Weyl semimetals and can be important for their proposed applications as downscaled interconnects.

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Section: Methodsmentioning

confidence: 99%

Low‐Frequency Current Fluctuations in Quasi‐1D (TaSe₄)₂I Weyl Semimetal Nanoribbons

Ghosh

Kargar

et al. 2022

Adv Elect Materials

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“…Kargar et al prepared TaSe 2.75 and TaSe 2.85 NRBs, and their electrical properties were examined by tip-enhanced Raman scattering spectroscopy (TERS) and photoluminescence (PL) analysis. 597 It was revealed that TaSe 2.75 NRBs exhibited a strong broad PL peak centered at 922 nm and TERS response under 785 nm laser excitation, indicating the semiconducting behavior. In contrast, TaSe 2.85 NRBs showed neither a PL nor TERS response, which was consistent with the metallic characteristic.…”

Section: Metal-assisted Exfoliationmentioning

confidence: 97%

“…To overcome the issue, most of the research has been focused on adjusting γ MC‑Substrate . As well as the intrinsically layered 2D MCs, quasi 1D vdW NRBs that consist of atomic threads weakly bound by vdW interaction can be directly exfoliated by adhesion tape into quasi 1D NBs. − Typically, bulk crystals are first synthesized by the chemical vapor transport method, then exfoliated, and transferred onto desired substrates. Geremew et al fabricated ZrTe 3 NRBs with a thickness of ∼50 nm by direct peel-off .…”

Section: Exfoliation Synthesismentioning

confidence: 99%

“…With the help of the clean, impurity-free metal-assisted exfoliation method combined with the chemical vapor transport method, a Se vacancy effect on electrical properties of TaSe 3 was recently revealed. Kargar et al prepared TaSe 2.75 and TaSe 2.85 NRBs, and their electrical properties were examined by tip-enhanced Raman scattering spectroscopy (TERS) and photoluminescence (PL) analysis . It was revealed that TaSe 2.75 NRBs exhibited a strong broad PL peak centered at 922 nm and TERS response under 785 nm laser excitation, indicating the semiconducting behavior.…”

Section: Exfoliation Synthesismentioning

confidence: 99%

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Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

2023

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The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

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“…[ 25 ] 1D such as semiconducting nanowires, carbon nanotubes, organic polymers, etc. [ 26 ] 2D materials, for example, TMDCs and other families of 2D materials such as MXenes. [ 27 ] 3D such as germanium, silicon carbide, etc.…”

Section: Van Der Waals (Vdws) Heterostructurementioning

confidence: 99%

Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

Ahmad

Peng

Khan

et al. 2023

Adv Funct Materials

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Van der Waals (vdWs) heterostructures enable bandgap engineering of different 2D materials to realize the interlayer transition via type‐II band alignment leading to broaden spectrum that is beyond the cut‐off wavelength of individual 2D materials. Interlayer transition has a significant effect on the optoelectronic performance of vdWs heterostructure devices, and strong interlayer transition in 2D vdWs heterojunction is always demandable for sufficient charge transfer and rapid speed response. Herein, a state‐of‐the‐art review is presented on recent progress on interlayer transition in vdWs heterostructures for near‐infrared (NIR) photodetectors. First, the general synthesis techniques for vdWs heterostructures, band alignments in the vdWs heterostructures are provided. Then, the mechanism of interlayer transition in vdWs heterostructure and recent progress on interlayer transition in vdWs heterostructures for NIR photodetectors are summarized. Afterward, some worthy applications of NIR photodetectors are reviewed in related areas of this topic. At the last, an outlook, challenges, and future research directions of vdWs heterostructures for photodetectors at broaden response spectrum are presented.

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Metallic vs. semiconducting properties of quasi-one-dimensional tantalum selenide van der Waals nanoribbons

Abstract: We conducted a tip-enhanced Raman scattering spectroscopy (TERS) and photoluminescence (PL) study of quasi-1D TaSe3-δ nanoribbons exfoliated onto gold substrates. At a selenium deficiency of δ~0.25 (Se/Ta=2.75,), the nanoribbons exhibit...

Cited by 11 publications

References 62 publications

Low‐Frequency Current Fluctuations in Quasi‐1D (TaSe₄)₂I Weyl Semimetal Nanoribbons

Low‐Frequency Current Fluctuations in Quasi‐1D (TaSe₄)₂I Weyl Semimetal Nanoribbons

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

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Metallic vs. semiconducting properties of quasi-one-dimensional tantalum selenide van der Waals nanoribbons

Abstract: We conducted a tip-enhanced Raman scattering spectroscopy (TERS) and photoluminescence (PL) study of quasi-1D TaSe3-δ nanoribbons exfoliated onto gold substrates. At a selenium deficiency of δ~0.25 (Se/Ta=2.75,), the nanoribbons exhibit...

Cited by 11 publications

References 62 publications

Low‐Frequency Current Fluctuations in Quasi‐1D (TaSe4)2I Weyl Semimetal Nanoribbons

Low‐Frequency Current Fluctuations in Quasi‐1D (TaSe4)2I Weyl Semimetal Nanoribbons

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

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Low‐Frequency Current Fluctuations in Quasi‐1D (TaSe₄)₂I Weyl Semimetal Nanoribbons

Low‐Frequency Current Fluctuations in Quasi‐1D (TaSe₄)₂I Weyl Semimetal Nanoribbons