Metallic filament formation by aligned oxygen vacancies in ZnO-based resistive switches

Gu, Tingkun

doi:10.1063/1.4879677

Cited by 11 publications

(3 citation statements)

References 59 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In case of LRS, a nearly ohmic electronic conduction behaviour characterized with I α V was observed, suggesting that electrons flow in a metallic-like conductive path in agreement with a filamentary type of resistive switching. This ohmic-like behaviour can be ascribed to a depression of the local Schottky barrier at the Pt/ZnO interface in correspondence of the conductive path, as theoretically discussed by Gu [55]. A different electronic conduction mechanism can be identified instead in the HRS.…”

Section: Nw Length (µM)mentioning

confidence: 69%

“…Indeed, a switching mechanism based on the electrochemical metallization memory (ECM) effect, that involves the migration of host ions extracted from the metal electrodes, can be safely excluded due to the choice of electrochemically inert Pt electrodes [53,54]. According to first-principle calculations by Gu [55], that analyzed the metallic filament formation driven by oxygen ion movement under applied electric field in Pt/ZnO/Pt devices, the conductive channel in the ON state is related to valence electrons corresponding to the extended defects of alignment of oxygen vacancies that show delocalized properties. Note also that a VCM mechanism of switching was previously reported in a wide range of resistive switching devices based on ZnO thin films and contacted by means of Pt electrodes [56,57].…”

Section: Resistive Switching Mechanismmentioning

confidence: 99%

See 1 more Smart Citation

Hydrothermally grown ZnO nanowire array as an oxygen vacancies reservoir for improved resistive switching

et al. 2020

View full text Add to dashboard Cite

Resistive switching (RS) devices based on self-assembled nanowires (NWs) and nanorods (NRs) represent a fascinating alternative to conventional devices with thin film structure. The high surface-to-volume ratio may indeed provide the possibility of modulating their functionalities through surface effects. However, devices based on NWs usually suffer from low resistive switching performances in terms of operating voltages, endurance and retention capabilities. In this work, we report on the resistive switching behaviour of ZnO NW arrays, grown by hydrothermal synthesis, that exhibit stable, bipolar resistive switching characterized by SET/RESET voltages lower than 3 V, endurance higher than 1100 cycles and resistance state retention of more than 105 s. The physical mechanism underlying these RS performances can be ascribed to nanoionic processes involving the formation/rupture of conductive paths assisted by oxygen-related species in the ZnO active layer. The reported results represent, to the best of our knowledge, the best resistive switching performances observed in ZnO NW arrays in terms of endurance and retention.

show abstract

Section: Nw Length (µM)mentioning

confidence: 69%

Section: Resistive Switching Mechanismmentioning

confidence: 99%

Hydrothermally grown ZnO nanowire array as an oxygen vacancies reservoir for improved resistive switching

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Further, it influences the oxygen vacancy (V O ) formations during the electroforming of conductive filaments [ 7 ]. Jing et al and Gu et al, have explained the mechanism [ 8 , 9 ]. They have shown that the oxygen vacancy defect states

and

are originated by the O-deficient Zn orbitals, and the electron and hole injection under the electric field in the ZnO layer controls the formation and rupture of the oxygen-vacancy-related conductive filaments.…”

Section: Introductionmentioning

confidence: 99%

Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al2O3 Bilayer Structure

et al. 2022

View full text Add to dashboard Cite

In this work, the resistive switching behavior of bilayer ZnO/Al2O3-based resistive-switching random access memory (RRAM) devices is demonstrated. The polycrystalline nature of the ZnO layer confirms the grain boundary, which helps easy oxygen ion diffusion. Multilevel resistance states were modulated under DC bias by varying the current compliance from 0.1 mA to 0.8 mA, the SET operations where the low resistance state of the memristor device was reduced from 25 kΩ to 2.4 kΩ. The presence of Al2O3 acts as a redox layer and facilitates oxygen vacancy exchange that demonstrates stable gradual conductance change. Stepwise disruption of conductive filaments was monitored depending on the slow DC voltage sweep rate. This is attributed to the atomic scale modulation of oxygen vacancies with four distinct reproducible quantized conductance states, which shows multilevel data storage capability. Moreover, several crucial synaptic properties such as potentiation/depression under identical presynaptic pulses and the spike-rate-dependent plasticity were implemented on ITO/ZnO/Al2O3/TaN memristor. The postsynaptic current change was monitored defining the long-term potentiation by increasing the presynaptic stimulus frequency from 5 Hz to 100 Hz. Moreover, the repetitive pulse voltage stimulation transformed the short-term plasticity to long-term plasticity during spike-number-dependent plasticity.

show abstract

Nano-ZnO-Decorated lotus fibers for nonvolatile memristors

Nguyen,

Huu Do Ho,

et al. 2024

Applied Surface Science

View full text Add to dashboard Cite

Metallic filament formation by aligned oxygen vacancies in ZnO-based resistive switches

Abstract: Articles you may be interested inMethod of choice for fabrication of high-quality ZnO-based Schottky diodes

Cited by 11 publications

References 59 publications

Hydrothermally grown ZnO nanowire array as an oxygen vacancies reservoir for improved resistive switching

Hydrothermally grown ZnO nanowire array as an oxygen vacancies reservoir for improved resistive switching

Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al2O3 Bilayer Structure

Nano-ZnO-Decorated lotus fibers for nonvolatile memristors

Contact Info

Product

Resources

About