Metallic conduction through Langmuir-Blodgett films

Couch, N. R.; Montgomery, Catherine; Jones, Robert A.

doi:10.1016/0040-6090(86)90124-0

Cited by 70 publications

(13 citation statements)

References 18 publications

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“…The region of arrows 3 and 4 in Figure is pure filamentary conduction until it reaches a negative potential V 2 , at which (arrow 5 in Figure ) it again conducts through the organic film. Filamentary behavior has been studied by others 27 and reported to cause symmetrical I − V characteristics . Also, gold clusters (2−5 nm in size) are known to form under potential within the LB film at the gold−LB film interface, and they have shown coulomb charging phenomena, but with symmetrical I − V curves .…”

Section: Rectificationmentioning

confidence: 96%

“…Filamentary behavior has been studied by others 27 and reported to cause symmetrical I-V characteristics. 28 Also, gold clusters (2-5 nm in size) are known to form under potential within the LB film at the gold-LB film interface, and they have shown coulomb charging phenomena, but with symmetrical I-V curves. 26 The behavior of four successive cycles for a different pad is shown in Figure 12.…”

Section: Rectificationmentioning

confidence: 99%

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Electrical Rectification in a Langmuir−Blodgett Monolayer of Dimethyanilinoazafullerene Sandwiched between Gold Electrodes

et al. 2003

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Asymmetries were observed across a monolayer of dimethylanilinoaza[C 60 ]fullerene, (DMA-NC 60 , 1) sandwiched between gold electrodes of relatively large size (0.265 mm 2 ). Two modes of behavior are observed: (1) a sigmoidal and slightly asymmetric behavior, bespeaking of a moderate unimolecular rectifier (rectification ratio of about 2), and (2) above a threshold voltage V 1 (≈0.6 to 1.0 V), a dramatic increase of current to 0.3 to 1 A (as high as 1.36 × 10 7 electrons molecule -1 s -1 at 1.5 V), followed by ohmic behavior from V 1 to a relatively smaller negative bias V 2 (≈ -0.5 V to -0.6 V). At more negative potentials (e.g., at -1.5 V) the current is very small (a few µA). This high asymmetry in current persists for between 10 and 20 cycles of voltage scan. This increased, but ohmic conductivity is probably due to defects that grow at domain boundaries, since this behavior is not seen when very small electrodes (1 µm 2 area) are used. The defects could be stalagmitic filaments of gold which grow from the bottom electrode above V 1 but are broken at the negative bias V 2 , or else they could be due to some unknown electrochemical couple. This device is vaguely reminiscent of Zener diodes or varistors: if operated between, say, + 2 V and -2 V, it is a super-rectifier, with a rectification ratio of up to 20 000 at 1.5 V.

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Section: Rectificationmentioning

confidence: 96%

Section: Rectificationmentioning

confidence: 99%

Electrical Rectification in a Langmuir−Blodgett Monolayer of Dimethyanilinoazafullerene Sandwiched between Gold Electrodes

et al. 2003

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“…51,52 These metallic filamentary pathways result from metal diffusion through the monolayer, metal-related defects created by the impacting metal atoms, or by the filling with metal of preexisting defects in the monolayers (e.g., pinholes). The more disordered the monolayer, the greater the number of metallic filamentary pathways and hence the higher the measured current.…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…When a macroscopic metal electrode is evaporated on top of an organic monolayer, it is well known that the amplitude of the leakage current through the monolayer is dependent on the number of metallic filamentary pathways present in this monolayer underneath the electrode. 51,52 These metallic filamentary pathways results from metal diffusion through the monolayer, metal-related defects created by the impacting metal atoms, or by the filling with metal of pre-existing defects in the monolayers (e.g. pinholes).…”

Section: Electrical Propertiesmentioning

confidence: 99%

1-octadecene monolayers on Si(111) hydrogen-terminated surfaces: Effect of substrate doping

Miramond

Vuillaume

2004

Journal of Applied Physics

100

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Enhanced photoanode properties of epitaxial Ti doped α-Fe2O3 (0001) thin films Appl. Phys. Lett. 101, 133908 (2012) Structure and optical band gap of ZnO1−xSx thin films synthesized by chemical spray pyrolysis for application in solar cells J. Appl. Phys. 112, 063708 (2012) Roto-flexoelectric coupling impact on the phase diagrams and pyroelectricity of thin SrTiO3 films J. Appl. Phys. 112, 064111 (2012) Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cellsWe have studied the electronic properties, in relation to structural properties, of monolayers of 1-octadecene attached on a hydrogen-terminated (111) silicon surface. The molecules are attached using the free-radical reaction between C v C and Siu H activated by an ultraviolet illumination. We have compared the structural and electrical properties of monolayers formed on silicon substrates of different types (n type and p type) and different doping concentrations, from low-doped ͑ϳ10 14 cm −3 ͒ to highly doped ͑ϳ10 19 cm −3 ͒. We show that the monolayers on n-, p-, and p + -silicon are densely packed and that they act as very good insulating films at a nanometer thickness with leakage currents as low as ϳ10 −7 A cm −2 and high-quality capacitance-voltage characteristics. The monolayers formed on n + -type silicon are more disordered and therefore exhibit larger leakage current densities ͑Ͼ10 −4 A cm −2 ͒ when embedded in a silicon/monolayer/metal junction. The inferior structural and electronic properties obtained with n + -type silicon pinpoint the important role of surface potential and of the position of the surface Fermi level during the chemisorption of the organic monolayers.

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“…To explain this behavior one must account for the fact that the metal is likely to penetrate deeply within the organic material during the metal deposition process. [17][18][19][20] Two penetrating modes have been identified. One is the filing by metallic aggregates of some structural defects of the organic layer; the other is the migration of metallic atoms through the hydrophobic side chains of the organic molecules and along grain boundaries.…”

Section: Resultsmentioning

confidence: 99%

Evidence for the alteration of an organic/metal interface resulting from the formation of a broad interfacial layer

Bonello

Armand

Pradeau

et al. 1999

Journal of Applied Physics

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Articles you may be interested inInfluence of organic semiconductor-metal interfaces on the photoresponse of functionalized anthradithiophene thin films Energy level alignment at organic semiconductor/metal interfaces: Effect of polar self-assembled monolayers at the interface J. Chem. Phys. 128, 074705 (2008); 10.1063/1.2832306 Vacuum level alignment at organic/metal junctions: "Cushion" effect and the interface dipole Appl. Phys. Lett. 87, 263502 (2005); 10.1063/1.2151253 Mixing of interface dipole and band bending at organic/metal interfaces in the case of exponentially distributed transport states J. Appl. Phys. 93, 6084 (2003); 10.1063/1.1562731 Photocurrent multiplication at organic/metal interface and surface morphology of organic filmsThe alteration of the organic/electrode interface is partially responsible for the deterioration of the electrical efficiency of some molecular electronic devices. We used the picosecond ultrasonics to investigate the changes that occur at the interface copper-phthalocyanine/M ͑MϭAl or Au͒ after the electrode deposition: the absorption of an ultrashort laser pulse sets the heterostructure into vibration and the nature of the interface is deduced from the photoelastic response of the samples. We show that a broad interfacial layer is formed, the thickness of which is estimated. We show also that the slow migration of metallic particles within the organic layer leads, after a few weeks, to a broadening of the interfacial region.

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Metallic conduction through Langmuir-Blodgett films

Cited by 70 publications

References 18 publications

Electrical Rectification in a Langmuir−Blodgett Monolayer of Dimethyanilinoazafullerene Sandwiched between Gold Electrodes

Electrical Rectification in a Langmuir−Blodgett Monolayer of Dimethyanilinoazafullerene Sandwiched between Gold Electrodes

1-octadecene monolayers on Si(111) hydrogen-terminated surfaces: Effect of substrate doping

Evidence for the alteration of an organic/metal interface resulting from the formation of a broad interfacial layer

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