Metallic behaviour of boron-containing carbon nanotubes

Hsu, Wen‐Kuang; Chu, Shaoyan; Muñoz-Picone, E; Boldú, J. L.; Firth, Steven; Franchi, Paola; Roberts, Brian P.; Schilder, A.; Terrones, Humberto; Grobert, Nicole; Zhu, Yan; Terrones, Mauricio; McHenry, Michael E.; Kroto, Harold W.; Walton, D. R. M.

doi:10.1016/s0009-2614(00)00553-4

Cited by 62 publications

(30 citation statements)

References 30 publications

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“…systems filled with layered silicates or silica nanoparticles) is possible that CNTs act in other ways. According to previous data [48], a CNTs may contain localised states, due to lattice defects, that can be considered as acceptor-like. The presence of acceptor-like electronic properties in CNTs is mainly responsible for radical termination during polymer degradation, so CNTs can actually act also as radical scavenger during the degradation in air where radical species are formed [49].…”

Section: Thermal Stabilitymentioning

confidence: 91%

Influence of MWCNT morphology on dispersion and thermal properties of polyethylene nanocomposites

Barus

Zanetti

Bracco

et al. 2010

Polymer Degradation and Stability

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Section: Thermal Stabilitymentioning

confidence: 91%

Influence of MWCNT morphology on dispersion and thermal properties of polyethylene nanocomposites

Barus

Zanetti

Bracco

et al. 2010

Polymer Degradation and Stability

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“…[8][9][10][11] Doping by either B or N alone tends to produce metallic behavior. [10,11] Theoretical calculations predict that the BCN-SWNTs possess a bandgap that is adjustable by chemical composition and atomic configuration, [12][13][14] which has aroused interest in the synthesis of the ternary system of BCN-SWNTs. An early study on BCN-SWNT growth was reported by using a substitution reaction of pristine C-SWNTs.…”

mentioning

confidence: 99%

Converting Metallic Single‐Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co‐Doping

Wang

et al. 2008

Advanced Materials

107

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Electronic transport measurements on boron/nitrogen co‐doped single‐walled carbon nanotubes (BCN‐SWNTs) have been performed to determine their metallic or semiconducting character. The results obtained from a large number of BCN‐SWNT‐based field‐effect transistors indicate that the as‐grown BCN‐SWNTs are purely semiconducting, while the undoped C‐SWNTs consist of only about 70% semiconducting nanotubes.

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“…(1.7 ± 0.5)% Table 3.1: Nitrogen concentration of the samples as obtained from electron paramagnetic resonance spectroscopy measurements doped CNTs [126], [127] and pristine CNSs [41], [85]. A novel technique was developed to determine the nitrogen concentration of the samples using the EPR spectrometer [128].…”

Section: Electron Paramagnetic Resonance Spectroscopymentioning

confidence: 99%

The electrical transport properties of nitrogen doped carbon microspheres

Wright

Marsicano

Keartland

et al. 2014

Materials Chemistry and Physics

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A suite of four samples of nitrogen doped carbon microspheres, each with a different level of nitrogen dopant, was synthesised in a horizontal chemical vapour deposition reaction. The samples were characterized using scanning electron microscopy, Raman spectroscopy and electron paramagnetic resonance spectroscopy. Scanning electron microscopy showed that microspheres were produced by the reaction. Raman spectroscopy confirmed the graphitic nature of the samples. Electron paramagnetic resonance spectroscopy determined that nitrogen was present in the graphitic lattice and was used as a non-destructive technique to measure the amount of substitutional nitrogen present in the samples. In order to perform electrical transport measurements an automated magneto-transport measurement station was developed in the laboratory. This transport station was computer controlled and contained all of the necessary hardware and software required to perform magneto-electrical transport measurements. Variable temperature electrical transport measurements were performed on all samples to determine their conductive properties. Resistance measurements showed that two of the samples were semiconductors while the other two samples displayed a transition to metallic behaviour at higher temperatures. This transition can be ascribed to the thermal desorption of nitrogen dopant. Models were fitted to the data and the semiconducting behaviour is best explained by a model of fluctuation induced tunnelling while the metallic behaviour is best explained by a quasi-1 dimensional metallic term based on electron-phonon interactions. The IV characteristics of two of the samples display increasing non-linearity of the current's voltage dependence with decreasing temperature. The other two samples exhibit this behaviour at lower temperatures while higher temperature IV data displays a current saturation with increasing voltage. The same models used to explain the resistance measurements can be used to explain the IV characteristics data extremely well. The magnetoresistance data taken with the direction of current flow orientated both parallel and perpendicular to the field, show a transition from negative to positive magnetoresistance with decreasing temperature. The results of these experiments are inconclusive, as a theoretical model of magnetoresistance in systems that conduct via fluctuation induced tunnelling is not well defined. A comparison between the resistance measurements of all four samples was made to determine the effect of nitrogen doping on the samples' ii Abstract electronic transport properties. The result of this comparison was indeterminate. This was due to samples with identical nitrogen dopant levels displaying vastly different conductive properties and indicates that very strict synthesis conditions need to be adhered to in order to ensure sample quality. Resistance measurements were rerun on the two samples that displayed purely semiconducting behaviour to investigate the possibility of atmospheric doping. It was foun...

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Metallic behaviour of boron-containing carbon nanotubes

Cited by 62 publications

References 30 publications

Influence of MWCNT morphology on dispersion and thermal properties of polyethylene nanocomposites

Influence of MWCNT morphology on dispersion and thermal properties of polyethylene nanocomposites

Converting Metallic Single‐Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co‐Doping

The electrical transport properties of nitrogen doped carbon microspheres

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