Metallic and dielectric metasurfaces in photoconductive terahertz devices: a review

Yachmenev, A. E.; Lavrukhin, D. V.; Glinskiy, I. A.; Zenchenko, N. V.; Goncharov, Yu. G.; Spektor, I. E.; Хабибуллин, Р. А.; Otsuji, Taiichi; Пономарев, Д. С.

doi:10.1117/1.oe.59.6.061608

Cited by 71 publications

(51 citation statements)

References 142 publications

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“…Терагерцовая (ТГц) область электромагнитного спектра расположена между инфракрасной (ИК) и микроволновой областями шкалы электромагнитных волн и охватывает диапазон частот от 0.1 до 10.0 THz, что соответствует длинам волн от 30 µm до 3 mm соответственно [1][2][3][4]. Интенсивное освоение данного диапазона наблюдается в последние десятилетия, что связано с развитием новых методов генерации и детектирования ТГц излучения [5][6][7]. В настоящий момент область ТГц технологий является одной из наиболее быстро развивающихся, что хорошо иллюстрируется анализом патентных данных, приведенных в работе [8].…”

Section: электромагнитное излучение терагерцового диапазонаunclassified

“…К настоящему времени уже накоплено достаточное количество данных, описывающих оптические характеристики крови и ее компонентов в ТГц диапазоне частот [13,62,63]. Следует отметить, что при проведении спектроскопических исследований на стандартных ТГц импульсных спектрометрах (спектральный диапазон 0.1−3.2 THz, средняя мощность 100 nW, продолжительность измерения 1−5 min) изменений в спектральных и морфологических характеристиках клеток крови не происходит [5,62,63].…”

Section: влияние тгц излучения на клетки кровиunclassified

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Механизмы Влияния Терагерцового Излучения На Клетки (Обзор)

Черкасова¹,

Сердюков²,

Ратушняк³

et al. 2020

Журнал Технической Физики

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Terahertz (THz) radiation and related technologies are rapidly developed and find their application in different branches of science and technology, including medical diagnostics and therapy. This poses a problem of determining the safety limits of the human body exposure to THz radiation, which is closely related to a problem of biological activity of THz waves. Therefore, in this work, the current state of research in the area of THz radiation – cells interaction is overviewed.

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Section: электромагнитное излучение терагерцового диапазонаunclassified

Section: влияние тгц излучения на клетки кровиunclassified

Механизмы Влияния Терагерцового Излучения На Клетки (Обзор)

Черкасова¹,

Сердюков²,

Ратушняк³

et al. 2020

Журнал Технической Физики

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show abstract

“…One of the fundamental challenges in developing these systems is implementing efficient THz sources and detectors. Plasmonic photoconductive devices (PCDs) have become one of the most promising candidates to address this challenge because of their dramatically increased optical-to-THz conversion efficiency [3]- [7]. While the experimental research on fabrication of plasmonic PCDs has progressed remarkably in the recent years, there is still room for significant improvement in formulating and implementing numerical methods for rigorous and accurate simulation of this type of devices.…”

Section: Introductionmentioning

confidence: 99%

Multiphysics Simulation of Plasmonic Photoconductive Devices Using Discontinuous Galerkin Methods

Chen

Bağcı

2020

IEEE J. Multiscale Multiphys. Comput. Tech.

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Plasmonic nanostructures significantly improve the performance of photoconductive devices (PCDs) in generating terahertz radiation. However, they are geometrically intricate and result in complicated electromagnetic (EM) field and carrier interactions under a bias voltage and upon excitation by an optical EM wave. These lead to new challenges in simulations of plasmonic PCDs, which cannot be addressed by existing numerical frameworks. In this work, a multiphysics framework making use of discontinuous Galerkin (DG) methods is developed to address these challenges. The operation of the PCD is analyzed in stationary and transient states, which are described by coupled systems of the Poisson and stationary driftdiffusion (DD) equations and the time-dependent Maxwell and DD equations, respectively. Both systems are discretized using DG schemes. The nonlinearity of the stationary system is accounted for using the Gummel iterative method while the nonlinear coupling between the time-dependent Maxwell and DD equations is tackled during time integration. The DG-based discretization and the explicit time marching help in handling space and time characteristic scales that are associated with different physical processes and differ by several orders of magnitude. The accuracy and applicability of the resulting multiphysics framework are demonstrated via simulations of conventional and plasmonic PCDs.

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“…Recently [3,4], the In 0.5 Ga 0.5 As-based semiconductor structures have been investigated as photoconductive materials for THz PCAs due to an appropriate room-temperature optical absorption cut-off wavelength of 1.5 µm. Lately, a significant improvement in the performance of these devices was achieved, mainly with the help of nanotechnology tools such as plasmonic light concentrators, plasmonic contact electrodes, optical nanoantenna arrays, or optical nanocavities [5][6][7]. Nevertheless, the development of basic photoconductive materials for THz PCAs is still of current interest.…”

Section: Introductionmentioning

confidence: 99%

Improved InGaAs and InGaAs/InAlAs Photoconductive Antennas Based on (111)-Oriented Substrates

et al. 2020

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The terahertz wave generation by spiral photoconductive antennas fabricated on low-temperature In0.5Ga0.5As films and In0.5Ga0.5As/In0.5Al0.5As superlattices is studied by the terahertz time-domain spectroscopy method. The structures were obtained by molecular beam epitaxy on GaAs and InP substrates with surface crystallographic orientations of (100) and (111)A. The pump-probe measurements in the transmission geometry and Hall effect measurements are used to characterize the properties of LT-InGaAs and LT-InGaAs/InAlAs structures. It is found that the terahertz radiation power is almost four times higher for LT-InGaAs samples with the (111)A substrate orientation as compared to (100). Adding of LT-InAlAs layers into the structure with (111)A substrate orientation results in two orders of magnitude increase of the structure resistivity. The possibility of creating LT-InGaAs/InAlAs-based photoconductive antennas with high dark resistance without compensating Be doping is demonstrated.

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Metallic and dielectric metasurfaces in photoconductive terahertz devices: a review

Cited by 71 publications

References 142 publications

Механизмы Влияния Терагерцового Излучения На Клетки (Обзор)

Механизмы Влияния Терагерцового Излучения На Клетки (Обзор)

Multiphysics Simulation of Plasmonic Photoconductive Devices Using Discontinuous Galerkin Methods

Improved InGaAs and InGaAs/InAlAs Photoconductive Antennas Based on (111)-Oriented Substrates

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