Metal-voiding phenomenon in aluminum and its alloys

A new reliability issue caused by high temperature annealing after via hole opening has been investigated and characterized. For the first time, it was found that a high temperature anneal above 45CfC causes simultaneous A 1 extrusion at the via hole interface and void formation in A 1 interconnects, drastically degrading the reliability of A 1 lines with vias, Based on in situ observation of extrusion/void formation and two-dimensional elastic deformation analysis, it was confirmed that this phenomenon is due t o the movement of A 1 atoms towards the via hole interface resulting from the thermal expansion and the stress gradient formed in the A1 line near the via hole during the anneal sequence. Specific experimental results and the influence of such an anneal process on the reliability of A1 lines will be dicussed in detail.

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A four-level-metal fully planarized interconnect technology for dense high performance logic and SRAM applications

Uttecht

Geffken

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference

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Metal-voiding phenomenon in aluminum and its alloys

Cited by 6 publications

References 2 publications

Stress-induced void formation in metallization for integrated circuits

Stress-induced void formation in metallization for integrated circuits

Via hole-related simultaneous stress-induced extrusion and void formation in Al interconnects

A four-level-metal fully planarized interconnect technology for dense high performance logic and SRAM applications

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