Metal–semiconductor–metal UV photodetector based on Ga doped ZnO/graphene interface

Kumar, Manoj; Noh, Youngwook; Polat, Kinyas; Okyay, Ali Kemal; Lee, Dongjin

doi:10.1016/j.ssc.2015.10.007

Cited by 18 publications

(6 citation statements)

References 30 publications

(32 reference statements)

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“…The photoresponsivity is usually defined as ( I photo – I dark )/ P laser , where I photo is the photocurrent measured at 365 nm of UV illumination at a laser intensity of 1 mW, and I dark is measured in a dark box. The sericin coated ZNRs showed a higher photoresponse than the ZNRs, with a comparison of the corresponding photoresponse properties presented in Table . − Under 365 nm UV illumination, the sericin capped ZNR devices possess an ultrahigh photoresponse of 408.4, which is overwhelmingly better than that of the as-prepared ZNR-based devices (10.3). Interestingly, the sericin coated ZNR photodetectors offer the best photoresponse properties when compared with those of other photodetectors based on several materials reported in the literatures (c.f.…”

Section: Resultsmentioning

confidence: 91%

Simple Synthesis of Eco-Friendly Multifunctional Silk-Sericin Capped Zinc Oxide Nanorods and Their Potential for Fabrication of Hydrogen Sensors and UV Photodetectors

Chuang

Prasannan

Huang

et al. 2017

ACS Sustainable Chem. Eng.

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The present investigation describes a new eco-friendly, low cost material-based approach for sensor device fabrication. In this study, sericin capped zinc oxide nanorod (ZNR)-based H 2 gas sensors and UV photodetectors were fabricated by incorporating silk-sericin with ZnO. The proposed sensors have higher sensitivity to H 2 and greater photoresponsivity. The sericin capped ZNRs were fabricated from a degummed waste sericin solution using an inexpensive hydrothermal method. The sericin capped ZNRs show excellent H 2 gas response (17.8%) and photoresponse with a fast response time under UV illumination due to sericin coating on the surface of the ZnO. Sericin is a water-soluble protein with strong polar groups as side chains, such as carboxyl, amino, and hydroxyl groups, which can easily interact with zinc particles through electrostatic interactions, resulting in the unique and improved ZnO sensor behavior. This interaction was characterized by various analytical techniques and compared with as-grown ZNR. The gas sensing property and UV photoresponse were evaluated for both as-grown ZNRs and sericin capped ZNRs as functions of the H 2 concentration and time, respectively. Under 365 nm UV illumination, the sericin capped ZNR possesses an ultrahigh photoresponse of 408.4, which is 40 times better than that of the as-prepared ZnO devices (10.3). Moreover, the sensing response for the sericin capped ZNRs shows a complete recovery to the original level after evacuation of the H 2 and UV illumination in each cycle, indicating complete desorption and decomposition of the main adsorbed moieties. The sericin capped ZNR presented in this work shows enhanced, sustained, and reversible H 2 gas sensing and fast switching speed in the UV region and can be employed for the development of inorganic−organic novel materials utilizing the biomass from industrial waste.

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Section: Resultsmentioning

confidence: 91%

Simple Synthesis of Eco-Friendly Multifunctional Silk-Sericin Capped Zinc Oxide Nanorods and Their Potential for Fabrication of Hydrogen Sensors and UV Photodetectors

Chuang

Prasannan

Huang

et al. 2017

ACS Sustainable Chem. Eng.

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“…The G * Raman band reveals the defect activated peak in the Raman Spectrum [22]. However, the D mode corresponding to 1346 cm −1 does not appear in the spectrum, which suggests that the transferred graphene contains few defects [23,24]. Moreover, the presence of G * band at 2435 nm indicating defects exist in the transferred graphene.…”

Section: Methodsmentioning

confidence: 97%

Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector

Kumar¹,

Jeong²,

Polat³

et al. 2016

J. Phys. D: Appl. Phys.

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PAPER Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector To cite this article: M Kumar et al 2016 J. Phys. D: Appl. Phys. 49 275105 View the article online for updates and enhancements. Recent citations Hybrid graphene/GaN ultraviolet phototransistors with high responsivity and speed Huijun Tian et al -Rectified photocurrent in a planar ITO/graphene/ITO photodetector on SiC by local irradiation of ultraviolet light Junwei Yang et al -This content was downloaded from IP address 139.179.72.75 on 21/05/2018 at 09:15 1 AbstractWe report on the fabrication and characterization of a Schottky ultraviolet graphene/AlGaN/ GaN photodetector (PD). The fabricated device clearly exhibits rectification behaviour, indicating that the Schottky barrier is formed between the AlGaN and the mechanically transferred graphene. The Schottky parameters are evaluated using an equivalent circuit with two diodes connected back-to-back in series. The PD shows a low dark current of 4.77 × 10 −12 A at a bias voltage of −2.5 V. The room temperature current-voltage (I-V ) measurements of the graphene/AlGaN/GaN Schottky PD exhibit a large photo-to-dark contrast ratio of more than four orders of magnitude. Furthermore, the device shows peak responsivity at a wavelength of 350 nm, corresponding to GaN band edge and a small hump at 300 nm associated to the AlGaN band edge. In addition, we examine the behaviour of Schottky PDs with responsivities of 0.56 and 0.079 A W −1 at 300 and 350 nm, respectively, at room temperature.

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“…Ultraviolet photodetectors (UV PDs) are widely used in the military and civil elds, for example in ame and radiation detection, optical communications, and binary switches. [1][2][3][4] In the last decade, UV detectors based on wide band gap semiconductors (such as SiC, GaN, TiO 2 and ZnO [5][6][7][8][9] ) have received a lot of attention. Among the wide-band gap semiconductors, ZnO has many unique properties such as higher saturated carrier dri rate, wide band-gap and low cost.…”

Section: Introductionmentioning

confidence: 99%

High responsivity and 1/f noise of an ultraviolet photodetector based on Ni doped ZnO nanoparticles

et al. 2018

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Metal–semiconductor–metal UV photodetector based on Ga doped ZnO/graphene interface

Cited by 18 publications

References 30 publications

Simple Synthesis of Eco-Friendly Multifunctional Silk-Sericin Capped Zinc Oxide Nanorods and Their Potential for Fabrication of Hydrogen Sensors and UV Photodetectors

Simple Synthesis of Eco-Friendly Multifunctional Silk-Sericin Capped Zinc Oxide Nanorods and Their Potential for Fabrication of Hydrogen Sensors and UV Photodetectors

Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector

High responsivity and 1/f noise of an ultraviolet photodetector based on Ni doped ZnO nanoparticles

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