Metal-semiconductor-metal ultraviolet photodetectors directly fabricated on semi-insulating GaN:Fe template grown by hydride vapor phase epitaxy

Three-dimensional nanodome-printed transparent conductors for high-performing Si photodetectors

“…However, in the present case, it clearly demonstrates that the proficiency of ITO nanodome design can overcome the detection limit of light-absorbing semiconductor materials. The photoresponse of the highly-sensitive ITO-nanodome device is significantly higher than that of microscale Si pillar structures [10], ZnO M-S-M UV detection [5], GaN M-S-M UV detection [6], or Ag dendrites device [9]. For λ¼600 nm light, photoresponse was enormously higher than the other wavelengths.…”

“…Various design schemes have been reported with the objective of improving the performances of photodetectors which include the quality junction formation by metal-insulator-metal [2], metalsemiconductor-metal (MSM) [5,6], tailoring the light reactive area of semiconductor materials [4][5][6][7], and employing the functional materials like nanowires, graphene [1], and silicide [8].…”

“…Typically, photodetectors require a bias-voltage [1,3,5,6,9,10], which readily improve the photocurrent values. In addition to that, this voltage induces non-ignorable current even at a light-off condition, resulting in reduction of overall photodetection efficiency and causes unnecessary power consumption.…”

Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template*

“…Then a reasonable explanation for the shoulder peak is that certain amount of excited carriers are trapped by defect states along their drift path, resulting in an incomplete collection of carriers. [28] Thus, the main energy peak of incident alpha particles would broaden towards its low energy direction in the energy spectrum curve.…”