Metal-semiconductor direct-current triboelectric nanogenerator based on depletion mode u-GaN/AlGaN/AlN/GaN HEMT

Abstract

The urgent need for renewable energy source has led to a significant interest in triboelectric nanogenerators (TENGs) as a new energy technology. In contrast to traditional polymer TENGs, semiconductor direct-current TENGs are more suitable for miniaturization and integration with electronic devices. This study proposes a friction material made of depletion mode GaN high electron mobility transistors (HEMTs), which exhibit superior properties such as high two-dimensional electron gas concentration. By sliding a titanium sheet on a depletion mode GaN-based heterostructure, we have designed a metal-semiconductor direct-current triboelectric nanogenerator that achieved voltage up to 45.5 V and a peak power density of 2.32 W/m2. This generator can be used to supply DC power to 14 LEDs in series and drive a digital watch directly. In particular, the generation of direct current is predominantly influenced by the surface states of the undoped GaN cap that produce a large number of electrons and are associated with an additional electric field in the direction of the two-dimensional electron gas created in the u-GaN/AlGaN/AlN/GaN heterostructure of depletion mode GaN-based HEMTs. This research not only introduces a nitride semiconductor material of GaN-based HEMTs for the metal-semiconductor interface friction in the DC TENGs but also elucidates the current generation mechanism of GaN-based HEMT TENGs.

An Ultrahigh Power Density and Ultralow Wear GaN‐Based Tribovoltaic Nanogenerator for Sliding Ball Bearing as Self‐Powered Wireless Sensor Node

“…We have listed normalized APD and structure of some high performance TVNGs and TENGs (Table S1, Supporting Information, and Figure 1h). [20,[22][23][24][25][26][27][28][29][30] In comparison to the previous state-of-theart research (87.26 W m −2 Hz −1 ), the normalized APD of the ballon-disk TVNG has increased significantly by 282 times (24.6 kW m −2 Hz −1 ). The APD of this TVNG is higher than that of TVNG in the literature because of the special material properties and small contact area of GaN.…”

“…[16] Consequently, researchers have pursued enhancing the durability of TVNG by implementing superlubric structures, using lubricants, and exploring high-hardness materials. [17][18][19] However, regardless of the approach employed, it [20,[22][23][24][25][26][27][28][29][30].…”

“…g) Peak power density (PPD) and averaged power density (APD) of the TVNG. h) Comparison of frequency normalized APD between this work and others [20,[22][23][24][25][26][27][28][29][30]…”