Metal-seeded growth of III–V semiconductor nanowires: towards gold-free synthesis

Dick, Kimberly A.; Caroff, Philippe

doi:10.1039/c3nr06692d

Cited by 82 publications

(90 citation statements)

References 226 publications

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“…It has also been shown that solid NPs (Vapor-Solid-Solid, VSS) can aid the crystallization process, making the particle-seeded approach applicable to a rather wide range of growth parameters [6]. Further, Au NPs are not a prerequisite for fabricating NW structures as evident by the often used self-catalyzed method [8,9] and reports of using other foreign metal NPs [10].…”

Section: Introductionmentioning

confidence: 99%

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

et al. 2017

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Part of developing new strategies for fabrications of nanowire structures involves in many cases the aid of metal nanoparticles (NPs). It is highly beneficial if one can define both diameter and position of the initial NPs and make well-defined nanowire arrays. This sets additional requirement on the NPs with respect to being able to withstand a pre-growth annealing process (i.e. de-oxidation of the III-V semiconductor surface) in an epitaxy system.Recently, it has been demonstrated that Ag may be an alternative to using Au NPs as seeds for particle-seeded nanowire fabrication. This work brings light onto the effect of annealing of Au, Ag and Au-Ag alloy NP arrays in two commonly used epitaxial systems, the Molecular Beam Epitaxy (MBE) and the Metalorganic Vapor Phase Epitaxy (MOVPE). The NP arrays are fabricated with the aid of Electron Beam Lithography on GaAs 100 and 111B wafers and the evolution of the NPs with respect to shape, size and position on the surfaces 2 are studied after annealing using Scanning Electron Microscopy (SEM). We find that while the Au NP arrays are found to be stable when annealed up to 600 °C in a MOVPE system, a diameter and pitch dependent splitting of the particles are seen for annealing in a MBE system. The Ag NP arrays are less stable, with smaller diameters (≤ 50 nm) dissolving during annealing in both epitaxial systems. In general, the mobility of the NPs is observed to differ between the two the GaAs 100 and 111B surfaces. While the initial pattern is found be intact on the GaAs 111B surface for a particular annealing process and particle type, the increased mobility of the NP on the 100 may influence the initial pre-defined positions at higher annealing temperatures. The effect of annealing on Au-Ag alloy NP arrays suggests that these NP can withstand necessary annealing conditions for a complete de-oxidation of GaAs surfaces.

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Section: Introductionmentioning

confidence: 99%

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

et al. 2017

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“…For the purpose of controlling and improving semiconducting nanowire (NW) devices for various applications1234567, an extensive research effort has been invested in studying NW growth; this was typically achieved by studying the different effects of user controlled parameters: (i) materials - including type and size of NW catalyst, the growth substrates and precursors, and (ii) by altering growth-system parameters, i.e., temperature and precursor flow891011121314151617. In the following report we present a new paradigm, that of catalyst shape engineering, as a useful tool to control NW growth results; in particular, we show that by imposing a non-hemispherical shape to the catalyst-substrate interface, anisotropic cross-sectioned NWs may be grown - NWs with potentially new physical characteristics.…”

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confidence: 99%

Catalyst shape engineering for anisotropic cross-sectioned nanowire growth

Calahorra

Kelrich

Cohen

et al. 2017

Sci Rep

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The ability to engineer material properties at the nanoscale is a crucial prerequisite for nanotechnology. Hereunder, we suggest and demonstrate a novel approach to realize non-hemispherically shaped nanowire catalysts, subsequently used to grow InP nanowires with a cross section anisotropy ratio of up to 1:1.8. Gold was deposited inside high aspect ratio nanotrenches in a 5 nm thick SiN x selective area mask; inside the growth chamber, upon heating to 455 °C, the thin gold stripes agglomerated, resulting in an ellipsoidal dome (hemiellipsoid). The initial shape of the catalyst was preserved during growth to realize asymmetrically cross-sectioned nanowires. Moreover, the crystalline nature of the nanowire side facets was found to depend on the nano-trench orientation atop the substrate, resulting in hexagonal or octagonal cross-sections when the nano-trenches are aligned or misaligned with the [110] orientation atop a [111]B substrate. These results establish the role of catalyst shape as a unique tool to engineer nanowire growth, potentially allowing further control over its physical properties.For the purpose of controlling and improving semiconducting nanowire (NW) devices for various applications 1-7 , an extensive research effort has been invested in studying NW growth; this was typically achieved by studying the different effects of user controlled parameters: (i) materials -including type and size of NW catalyst, the growth substrates and precursors, and (ii) by altering growth-system parameters, i.e., temperature and precursor flow [8][9][10][11][12][13][14][15][16][17] . In the following report we present a new paradigm, that of catalyst shape engineering, as a useful tool to control NW growth results; in particular, we show that by imposing a non-hemispherical shape to the catalyst-substrate interface, anisotropic cross-sectioned NWs may be grown -NWs with potentially new physical characteristics. Furthermore, we show that the combination of a non-hemispherical catalyst with different crystalline orientations of the long axis results in non-trivial side-faceting of the grown NWs. Nanowire cross section shape and faceting is expected to influence its electrical, mechanical, optical and chemical properties [18][19][20][21][22][23][24] . In particular, Foster et al. have shown that the emission of InGaAs quantum wells embedded inside selective-area-grown anisotropically cross-sectioned GaAs NWs, exhibited linear polarization aligned with the long cross-section axis; basically, when one cross-sectional length-scale is too small to support an optical mode, the spatial degeneracy is lifted and the photoluminescence becomes linearly polarized 22 . This work is an excellent reference for catalyst free growth of anisotropic cross-sectioned NWs, and will be discussed below in further detail. Similar results have been reported by Li et al., in regards to polarisation of laser emission from top-down fabricated GaN NWs 23 . In a different case, Mankin et al. have studied the reactivity of different facets of a VLS ...

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“…However, thin film epitaxy of InAsP/InAs(Sb) heterostructures, especially with high antimony or phosphorus composition, is challenging due to lattice mismatches, which might result in planar defects. Alternatively, heteroepitaxy with large lattice mismatch can be achieved by the bottom-up growth of vertical freestanding nanowires due to elastic deformation occurring at heterogeneous interfaces [9,10].…”

Section: Introductionmentioning

confidence: 99%

Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 25 µm

Ren¹,

Farrell²,

Huffaker³

2018

Opt. Mater. Express

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Abstract:In this work, we report on the growth of high yield small bandgap InAs and InAsSb inserts embedded in InAsP nanowires grown on an InP substrate by catalyst-free selective-area metal-organic chemical vapor deposition. It is observed that the growth of the inserts with high aspect ratios can be achieved by properly tuning the V/III ratio. Nanowire arrays with InAs(Sb) inserts exhibit strong photoluminescence at 77 K from interband transitions, spanning a wavelength range of 2.30-3.70 µm. In addition, the InAsP/InAs heterointerfaces are characterized by a scanning transmission electron microscope and an energy-dispersive X-ray spectroscopy. We believe that these results pave the way to engineering interband transitions and enabling hybrid integration for nanoscale optical devices at the mid-wavelength infrared.

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Metal-seeded growth of III–V semiconductor nanowires: towards gold-free synthesis

Cited by 82 publications

References 226 publications

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

Catalyst shape engineering for anisotropic cross-sectioned nanowire growth

Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 25 µm

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