Metal oxides for interface engineering in polymer solar cells

Chen, Song; Manders, Jesse R.; Tsang, Sai‐Wing; So, Franky

doi:10.1039/c2jm33838f

Cited by 336 publications

(253 citation statements)

References 122 publications

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“…The valence band edge (E VB ) of NiO x has been reported to vary from 5.05 to 5.5 eV and depends on the surface condition of NiO x . 19,22,25,26,33,37 The surface condition of NiO changes due to exposure to air or by surface treatments. The open circuit voltage (V OC ) is determined by the difference between the E VB of NiO x and the conduction band of PCBM.…”

Section: ¹1mentioning

confidence: 99%

Effect of Carrier Transport in NiO on the Photovoltaic Properties of Lead Iodide Perovskite Solar Cells

et al. 2017

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The effect of the NiO x thickness on the photovoltaic properties in planar type lead iodide perovskite solar cells consisted of Tin-doped indium oxide (ITO)/NiO x /Perovskite/Phenyl-C61-Butyric-Acid-Methyl Ester (PCBM)/Ag was investigated. For films ranging from 35 nm to 120 nm in the thickness, the NiO x thickness was found to be not crucial in fill factor and open circuit voltage. Calculations of the carrier flux in NiO x , estimated from Einstein-Smoluchowski relation and Fick's first law, found the carrier transport ability of the NiO x to fully compensate the photo-generated current density in perovskite layers and the theoretical current density ca. 26 mA cm −2 . The favorable physical properties such as mobility and thickness were also estimated for effective carrier transport in perovskite solar cells assuming that the carrier density is 10 15 cm −3.

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Section: ¹1mentioning

confidence: 99%

Effect of Carrier Transport in NiO on the Photovoltaic Properties of Lead Iodide Perovskite Solar Cells

et al. 2017

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“…p-Type transparent conductors are not only much sought after for the realisation of fully transparent CMOS type electronics [1], but also can play an important role in hole injecting or extracting layers for organic light emitting diodes or photovoltaic solar cells respectively [2][3][4][5]. In particular, oxide materials have been studied intensively since the first report of p-type transparent CuAlO 2 [6].…”

Section: Introductionmentioning

confidence: 99%

Raman spectra of p-type transparent semiconducting Cr2O3:Mg

et al. 2015

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a b s t r a c t a r t i c l e i n f oWe present an analysis of the Raman spectra of p-type transparent conducting Cr 2 O 3 :Mg grown by various techniques including spray pyrolysis, pulsed laser deposition, molecular beam epitaxy and reactive magnetron sputtering. The best performing films show a distinct broad range Raman signature related to defect-induced vibrational modes not seen in stoichiometric, undoped material. Our comparative study demonstrates that Raman spectroscopy can quantify unwanted dopant clustering in the material at high Mg concentrations, while also being sensitive to the Mg incorporation site. By correlating the Raman signature to the electrical properties of the films, growth processes can be optimised to give the best conducting films and the local defect structure for effective p-type doping can be studied.

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“…A bilayer of 100 nm Au and 1 nm MoOx was chosen as bottom electrode for hole injection. The work-function of this electrode is estimated to be ~5.0 eV [18] because of the presence of MoOx. Since the energy level of the highest occupied molecular orbital (HOMO) of F8BT amounts to 5.9 eV vs. vacuum, the hole injection barrier is of the order of 1 eV.…”

Section: Introductionmentioning

confidence: 99%

Data retention in organic ferroelectric resistive switches

Khikhlovskyi

Breemen

Janssen

et al. 2016

Organic Electronics

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Solution-processed organic ferroelectric resistive switches could become the long-missing non-volatile memory elements in organic electronic devices. To this end, data retention in these devices should be characterized, understood and controlled. First, it is shown that the measurement protocol can strongly affect the 'apparent' retention time and a suitable protocol is identified. Second, it is shown by experimental and theoretical methods that partial depolarization of the ferroelectric is the major mechanism responsible for imperfect data retention. This depolarization occurs in close vicinity to the semiconductor-ferroelectric interface, is driven by energy minimization and is inherently present in this type of phase-separated polymer blends. Third, a direct relation between data retention and the charge injection barrier height of the resistive switch is demonstrated experimentally and numerically. Tuning the injection barrier height allows to improve retention by many orders of magnitude in time, albeit at the cost of a reduced on/off ratio. Corresponding Author

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Metal oxides for interface engineering in polymer solar cells

Cited by 336 publications

References 122 publications

Effect of Carrier Transport in NiO on the Photovoltaic Properties of Lead Iodide Perovskite Solar Cells

Effect of Carrier Transport in NiO on the Photovoltaic Properties of Lead Iodide Perovskite Solar Cells

Raman spectra of p-type transparent semiconducting Cr2O3:Mg

Data retention in organic ferroelectric resistive switches

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