Metal‐Oxide‐Semiconductor Capacitance Measurements on Amorphous Silicon

Neitzert, H. C.; Löffler, St.; Klausmann, E.; Fahrner, W. R.

doi:10.1149/1.2055145

Cited by 5 publications

(3 citation statements)

References 3 publications

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“…These charge perturbations can be modeled as a capacitance and resistance, C L and G L of the polycrystalline silicon layer. This proposed model is consistent with earlier reports [7,8].…”

Section: Siliconsupporting

confidence: 93%

Modeling and characterization of deep trench isolation structures

Lee¹,

Bashir²

2001

Microelectronics Journal

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In this paper, we present a simple equivalent electrical circuit model and sidewall interface characterization results for a deep trench isolation structure. The trench structures used in the study consisted of n-silicon/undoped trench/n-silicon. The trenches were ®lled with undoped polycrystalline silicon and the trench sidewall was lined with thermal oxide and a deposited silicon nitride. The capacitance±voltage characteristics across the trench were measured and compared against the model predictions. The circuit model includes the effect of the space-charge region and recombination±generation currents in the undoped polycrystalline silicon trench ®ll material. The Terman method was used to extract the silicon/oxide sidewall interface density and the mid gap value was found to be less than 10 210 #/cm 2 -eV. q

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“…These charge perturbations can be modeled as a capacitance and resistance, C L and G L of the polycrystalline silicon layer. This proposed model is consistent with earlier reports [7,8].…”

Section: Siliconsupporting

confidence: 93%

Modeling and characterization of deep trench isolation structures

Lee¹,

Bashir²

2001

Microelectronics Journal

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“…The areas of each layer in the MIAS structure are all the same, except for the bottom gate contact, to prevent lateral current flow from affecting the experimental measurements. 12) The schematic band diagram of the MIAS capacitor in Fig. 2(a) for a slightly doped n-type a-Si:H under an electron depletion condition elucidates the physics of the MIAS capacitor.…”

Section: Equivalent Circuit Modelmentioning

confidence: 92%

“…Several works have entailed C-V measurements on MIAS, a-Si:H Schottky diode, and TFTs structures. [9][10][11][12][13][14] However, systematic studies involving capacitance-frequency (C-F) and conduction/frequency-frequency (G/F-F) measurements of an MIAS structure are few. In this study, temperature-dependent admittance spectroscopy was employed to investigate the interface states and properties of a-Si:H films.…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Metal–Silicon Nitride–Hydrogenated Amorphous Silicon Capacitor Elucidated Using Admittance Spectroscopy

Hsieh

Chen

Yen

et al. 2008

jjap

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Detailed admittance spectroscopy was performed on a metal-silicon nitride-hydrogenated amorphous silicon (MIAS) structure. On the basis of the properties of hydrogenated amorphous silicon (a-Si:H), three simplified equivalent circuit models under various operating conditions (accumulation, depletion and full depletion) are presented along with an alternative direct measurement method at room temperature. Admittance spectroscopy shows that the interface states density between silicon nitride (SiN x) and a-Si:H can be determined from the depletion equivalent circuit model. The resisivity and activation energy of a-Si:H can also be obtained using the accumulation and depletion equivalent circuit models. These models can be employed easily to monitor the fabrication parameters of thin-films transistors (TFTs) and to accurately and directly obtain the capacitance model parameters of TFTs.

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Capacitance analyses of hydrogenated nanocrystalline silicon based thin film transistor

Anutgan

Atilgan

et al. 2011

Thin Solid Films

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Metal‐Oxide‐Semiconductor Capacitance Measurements on Amorphous Silicon

Cited by 5 publications

References 3 publications

Modeling and characterization of deep trench isolation structures

Modeling and characterization of deep trench isolation structures

Electrical Properties of Metal–Silicon Nitride–Hydrogenated Amorphous Silicon Capacitor Elucidated Using Admittance Spectroscopy

Capacitance analyses of hydrogenated nanocrystalline silicon based thin film transistor

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