Metal-Oxide-Metal (M-O-M) Detector

Kwok, S. P.; Haddad, G.I.; Lobov, G. D.

doi:10.1063/1.1660062

Cited by 37 publications

(12 citation statements)

References 10 publications

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“…Effectively controlling quantum mechanical tunneling through an ultrathin dielectric represents a fundamental materials challenge in the quest for high‐performance metal‐insulator‐metal (MIM) diodes. Such diodes are the basis for alternative approaches to conventional thin‐film transistor technologies for large‐area information displays,1, 2 various types of hot electron transistors,2–6 ultrahigh speed discrete or antenna‐coupled detectors,7–14 and optical rectennas 15. MIM diodes have been fabricated by anodization,1 thermal oxidation,8–11, 14 plasma oxidation,10, 12, 13 or plasma nitridation16 of crystalline metal films.…”

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confidence: 99%

Advancing MIM Electronics: Amorphous Metal Electrodes

et al. 2010

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Effectively controlling quantum mechanical tunneling through an ultrathin dielectric represents a fundamental materials challenge in the quest for high-performance metal-insulatormetal (MIM) diodes. Such diodes are the basis for alternative approaches to conventional thin-fi lm transistor technologies for large-area information displays, [ 1 , 2 ] various types of hot electron transistors, [2][3][4][5][6] ultrahigh speed discrete or antennacoupled detectors, [7][8][9][10][11][12][13][14] and optical rectennas. [ 15 ] MIM diodes have been fabricated by anodization, [ 1 ] thermal oxidation, [ 8-11 , 14 ] plasma oxidation, [ 10 , 12 , 13 ] or plasma nitridation [ 16 ] of crystalline metal fi lms. Diodes fabricated using these approaches have invariably exhibited poor yield and performance. These problems are to a large extent a consequence of the roughness of the surface of the crystalline metal fi lm, which is often larger than the thickness of the MIM insulator. As a result, the electric fi eld across a MIM device will be highly nonuniform, making the control of quantum mechanical tunneling problematic. In this contribution, we describe the use of an amorphous metal contact as a critical component for circumventing the surface roughness and fi eld uniformity roadblocks that have precluded the realization and utility of MIM electronics for applications requiring high device current rectifi cation ratios (e.g. display applications).The MIM diode is the fundamental building block of metalinsulator electronics. The device is characterized by a high degree of nonlinearity in its current-voltage characteristics as a result of a large difference in conductivity between on and off states. The operational theory of this diode, based on Fowler-Nordheim tunneling, has been described in detail by Simmons. [ 17 , 18 ] The probability of quantum mechanical tunneling depends exponentially on the thickness of the insulator between a pair of metal electrodes. Hence, the performance of the diode is critically dependent on the thickness uniformity of the tunnel-dielectric layer across the entire device. Interfacial roughness and dielectric imperfections give rise to alternate conduction mechanisms, e.g. Frenkel Poole emission, that can dominate at low voltages and reduce the device rectifi cation ratio. The inability to create and effectively control a uniform electric fi eld across the whole device area has been the primary limitation in producing reliable MIM devices. Here, we demonstrate that the necessary fi eld control can readily be achieved by integrating the atomically smooth-surface of an amorphous metal electrode with high-quality insulators. This combination provides a rich materials and processing palette for development of MIM electronics, enabling new strategies for device design and fabrication.Amorphous metals have been primarily investigated as bulk materials, addressing diverse applications that range from micromachines and hinges for digital light processors to golf clubs and transformer cores. [19][20][21] T...

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Advancing MIM Electronics: Amorphous Metal Electrodes

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“…This is extremely challenging for the rectifying capability of any diode technology. Metal-Oxide-Metal (MOM) structures, with electron tunneling as the transport mechanism, [5][6], are the most promising type of diode to use in this application. The diode itself consists of two dissimilar metals, separated by a uniform native oxide layer, which is sufficiently thin to allow electron tunneling to occur, i.e.…”

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confidence: 99%

Ti-TiO_x-Pt Metal-Oxide-Metal Diodes Fabricated via a Simple Oxidation Technique

2012

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. ABSTRACTThis work presents the successful production, via a simple oxidation process, of Ti-TiO xPt Metal-Oxide-Metal diodes with excellent electrical asymmetry. TEM analysis has been used to verify the oxide thickness. A thicker layer produces better diodes, although they are of a less uniform nature. The conduction mechanism in these diodes is still under investigation. INTRODUCTIONEnergy recovery systems have attracted much interest in recent years [1][2][3]. A significant amount of energy is wasted in the form of heat, leading to research dedicated specifically to energy recovery from this source. In electromagnetic terms, heat is infrared radiation, and its energy content will follow Planck's Law of spectral distribution. The wavelength of maximum emission intensity λ max within this distribution can be calculated using Wien's Law (Eqn. 1):

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“…(2) L'effet d'inversion de polarité a été étudié théoriquement et expérimentalement dans une jonction Al-A1203-W soumise à un signal micro-ondes [61]. L'inversion de polarité est obtenue pour des signaux à fort niveau et elle dépend de la résistance de la jonction et de la fonction travail des métaux utilisés.…”

Section: 1 2 La Diode Métal-isolant-métal(mim)unclassified

Synthèse et mesure des fréquences optiques

Jiménez¹

1979

Rev. Phys. Appl. (Paris)

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2014 Les lasers à gaz stabilisés en fréquence par absorption saturée sont actuellement acceptés comme étalons secondaires de fréquence et de longueur dans le domaine optique. Les caractéristiques de stabilité et reproductibilité en fréquence de ces différents lasers sont passées en revue. La synthèse de fréquences, par mélange dans un dispositif non linéaire à large bande passante de plusieurs faisceaux lasers, permet la mesure de fréquences comprises entre les micro-ondes et l'infrarouge proche. La synthèse à partir de deux lasers à gaz carbonique nous a permis de mesurer la fréquence du laser He-Ne à 88 THz (3,39 03BCm). La plage de mesure peut être élargie en utilisant les différents isotopes du CO2. Plusieurs types de dispositifs non linéaires sont capables de réaliser le mélange des fréquences optiques. Une étude de leurs caractéristiques comme détecteur et mélangeur montre les domaines respectifs possibles de fonctionnement. Plusieurs d'entre eux sont susceptibles de travailler à des fréquences infrarouges, et la possibilité d'étendre leur fonctionnement jusqu'au visible est signalée. L'utilisation de nouveaux dispositifs, tels que l'oscillateur à cavité supraconductrice et le laser à alcool méthylique (qui possèdent des raies d'émission très étroites), dans un nouveau schéma de raccordement entre les fréquences radioélectriques et optiques, permet d'envisager la mesure de la fréquence du laser à méthane à 3,39 03BCm avec une précision de l'ordre de 10-12. Abstract. 2014 Saturated-absorption stabilized gas lasers provide, in the optical region, accepted secondary frequency and length standards. Frequency stability and reproducibility of these lasers are reviewed. Using a broadband nonlinear device as a mixer, frequency synthesis of different lasers extend the frequency measurement range from microwaves to the near infrared. Using two carbon dioxide lasers, we have been able to measure the He-Ne laser frequency at 88 THz (3.39 03BCm). The frequency measurement range may be increased using different CO2 isotopes. Several nonlinear devices are able to mix optical frequencies from the submillimetric to the infrared wavelength. We review their characteristics as detectors and mixers, and we point out the possibility to extend it to the visible range. The use of new devices, the cavity stabilized superconducting oscillator and the methyl alcohol laser, with very narrow linewidths, inserted in a new laser frequency synthesis chain, should permit measurements of the methane laser frequency at 3.39 03BCm to parts in 1012.

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Metal-Oxide-Metal (M-O-M) Detector

Cited by 37 publications

References 10 publications

Advancing MIM Electronics: Amorphous Metal Electrodes

Advancing MIM Electronics: Amorphous Metal Electrodes

Ti-TiO_x-Pt Metal-Oxide-Metal Diodes Fabricated via a Simple Oxidation Technique

Synthèse et mesure des fréquences optiques

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Metal-Oxide-Metal (M-O-M) Detector

Cited by 37 publications

References 10 publications

Advancing MIM Electronics: Amorphous Metal Electrodes

Advancing MIM Electronics: Amorphous Metal Electrodes

Ti-TiOx-Pt Metal-Oxide-Metal Diodes Fabricated via a Simple Oxidation Technique

Synthèse et mesure des fréquences optiques

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Product

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Ti-TiO_x-Pt Metal-Oxide-Metal Diodes Fabricated via a Simple Oxidation Technique