Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

Damilano, B.; Kim-Chauveau, H.; Frayssinet, Éric; Brault, J.; Hussain, S.; Lekhal, Kaddour; Vennéguès, P.; Mierry, P. de; Massies, J.

doi:10.7567/apex.6.092105

Cited by 14 publications

(7 citation statements)

References 26 publications

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“…1). This LED structure can be used as a light converter on SCAM (0001) substrate, like to that we have seen the same with GaN/InxGa1-xN on sapphire substrate [35]. The main challenge will be the accurate growth of the LED structure in near future.…”

Section: Discussionmentioning

confidence: 57%

Modeling of In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN light emitting diode structure on ScAlMgO4 (0001) substrate for high intensity red emission

Hussain¹,

Rahman²,

Prodhan³

2020

SPQEO

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An In0.17Ga0.83N light emitting diode (LED) structure on ScAlMgO4 (0001) substrate is modeled for high intensity red emission. The high indium composition (In > 15%) inside the c-plane polar quantum well (QW) for longer wavelength emission degrades the structural and optical properties of LEDs because of induced strain energy and quantum confinement Stark effect. To compensate these effects, it has been demonstrated by simulation that an AlyGa1–yN cap layer of 2 nm thick and Al composition of 17% deposited onto QW of 3 nm thick and In composition of 35% will allow to have less defect density and higher intensity red emission at 663 nm than that of In0.17Ga0.83N/InxGa1–xN LEDs grown on ScAlMgO4 (0001) substrate. This LED structure has perfect in-plane equilibrium lattice parameter (αeq = 3.249 Å) and higher logarithmic oscillator strength (Γ = –0.93) values.

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Section: Discussionmentioning

confidence: 57%

Modeling of In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN light emitting diode structure on ScAlMgO4 (0001) substrate for high intensity red emission

Hussain¹,

Rahman²,

Prodhan³

2020

SPQEO

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“…Figure 2. Photograph of the room temperature electroluminescence of a warm white monolithic light emitting diode using a 40 period InGaN/GaN multiple quantum well 19 . The quantum well parameters are similar to sample G2.…”

Section: The Samples and Temperature -Dependent Photoluminescencementioning

confidence: 99%

“…The equivalent CW PL spectrum is obtained here by integration through the whole collection time of instantaneous spectra. Such long wavelength InGaN quantum wells can be used as light converters in monolithic light emitting diodes 19 . Figure 2 plotted a photograph of the room temperature electroluminescence emitted by such samples.…”

Section: The Samples and Temperature -Dependent Photoluminescencementioning

confidence: 99%

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Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures

Ngo¹,

Rosales²,

Gil³

et al. 2015

SPIE Proceedings

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We present an investigation of optical properties of yellow light emitting (Ga,In) N-based devices grown by metalorganic vapor phase epitaxy (MOVPE) on c-plane sapphire with different designs: well width, indium composition up to 23 percent in the well layer. Using time-resolved photoluminescence measurements collected in range of 8-300K, temperature -dependent photoluminescence decays are determined, they exhibit similar behaviors for all samples. These quantum devices always display a two-mode exponential decay with a long decay time and a short one in a ratio about four to five. The photoluminescence intensities measured from low temperature to room temperature give large values of activation temperature that indicate the increasing of the non-radiative recombination rate when the temperature increases. The average decay times are found by a procedure using fitting sigmoidal functions. These decay times increase exponentially with the indium concentration and the well width due to influence of quantum confined Stark effect on these devices. Finally, in order to estimate the performances of our samples, we plotted the decay times obtained versus product of the indium content and the well width together with others published decay times.

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“…Mixing the three basic blue/green/red colors directly on the same wafer is therefore highly desirable and constitutes an important challenge. Efforts towards this objective have been reported in the literature using for example nanowires grown by molecular beam epitaxy 5 , 6 , light conversion by (Ga,In)N multiple quantum wells 7 , facets with different orientations 8 , and local etching of red-emitting LED structures 9 .…”

Section: Introductionmentioning

confidence: 99%

Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate

Damilano¹,

Portail²,

Frayssinet³

et al. 2020

Sci Rep

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It is shown that substrate pixelisation before epitaxial growth can significantly impact the emission color of semiconductor heterostructures. The wavelength emission from InxGa1−xN/GaN quantum wells can be shifted from blue to yellow simply by reducing the mesa size from 90 × 90 µm2 to 10 × 10 µm2 of the patterned silicon used as the substrate. This color shift is mainly attributed to an increase of the quantum well thickness when the mesa size decreases. The color is also affected, in a lesser extent, by the trench width between the mesas. Cathodoluminescence hyperspectral imaging is used to map the wavelength emission of the InxGa1−xN/GaN quantum wells. Whatever the mesa size is, the wavelength emission is red-shifted at the mesa edges due to a larger quantum well thickness and In composition.

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Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

Cited by 14 publications

References 26 publications

Modeling of In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN light emitting diode structure on ScAlMgO4 (0001) substrate for high intensity red emission

Modeling of In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN light emitting diode structure on ScAlMgO4 (0001) substrate for high intensity red emission

Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures

Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate

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