Metal Organic Cluster Photoresists for EUV Lithography

Sakai, Kazunori; Jung, Seung Boo; Pan, Wenhao; Giannelis, Emmanuel P.; Ober, Christopher K.

doi:10.2494/photopolymer.32.711

Cited by 4 publications

(1 citation statement)

References 5 publications

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“…As predicted by Moore’s Law, the density of integrated circuits (ICs) has been improved exponentially for high-performance semiconductor devices and the photolithographic fabrication of nanoscale semiconductor devices requires increasingly high-resolution techniques. , Extreme ultraviolet lithography (EUVL) and electron beam lithography (EBL) are key advanced lithographic technologies for the production of feature sizes lower than 20 nm. − As the feature size decreases, the requirements for resists’ performance have gradually increased. It is still a great challenge to develop resist materials fulfilling all the requirements for advanced lithography such as high resolution (R) and sensitivity (S), low line edge roughness (LER), high etching resistance, and low outgassing. − The traditional polymeric materials are unfavorable for achieving high-resolution lithographic patterns with low LER due to their characteristics, such as polydispersity, large molecular size, chain entanglement, and poor compatibility with photoacid generators (PAGs). − …”

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confidence: 99%

Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography

et al. 2022

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A series of t -butyloxycarbonyl ( t -Boc) protected tetraphenylsilane derivatives (TPSi-Boc x , x = 60, 70, 85, 100%) were synthesized and used as resist materials to investigate the effect of t -Boc protecting ratio on advanced lithography. The physical properties such as solubility, film-forming ability, and thermal stability of TPSi-Boc x were examined to assess the suitability for application as candidates for positive-tone molecular glass resist materials. The effects of t -Boc protecting ratio had been studied in detail by electron beam lithography. The results suggest that the TPSi-Boc x resist with different t -Boc protecting ratios exhibit a significant change in contrast, pattern blur, and the density of bridge defect. The TPSi-Boc 70% resist achieves the most excellent patterning capability. The extreme ultraviolet (EUV) lithography performance on TPSi-Boc 70% was evaluated by using the soft X-ray interference lithography. The results demonstrate that the TPSi-Boc 70% resist can achieve excellent patterning capability down to 20 nm isolated lines at 8.7 mJ/cm 2 and 25 nm dense lines at 14.5 mJ/cm 2 . This study will help us to understand the relationship between the t -Boc protecting ratio and the patterning ability and supply useful guidelines for designing molecular resists.

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