Metal-insulator transitions induced by a magnetic field

Pepper, M.

doi:10.1016/0022-3093(79)90071-1

Cited by 34 publications

(7 citation statements)

References 85 publications

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“…According to the carrier concentration result from our previous study, [23] the ideal σ of BL WSe2 conductance, W is the activation energy (eV), k is the Boltzmann constant, and T is the absolute temperature (K). [67,68] An increase of the σ is observed as temperature rises in Figure 5a.…”

Section: Resultsmentioning

confidence: 89%

Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

Han

Liu

et al. 2019

Adv Materials Inter

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Transition metal oxides (TMOs) with high work function (WF) show promising properties as unipolar p-type contacts for transition metal dichalcogenides. Here, ambipolar field-effect transistors (FETs) enabled by bilayer WSe2 with self-assembled TMOs (WO2.57) as contacts are reported. Systematic material characterizations demonstrated the formation of WO2.57/WSe2 heterojunctions around nanoflake edges with Se atoms substituted by O atoms after air-exposure, while pristine properties of WSe2 almost sustained in inner domains. As-fabricated FETs exhibited both polarities, implying WO2.57 with lowered WF at edges can serve as both the p-type and n-type contact for inner WSe2. Noteworthy, greatly reduced contact resistance and enhanced channel current were achieved, compared to the devices without WO2.57 contacts. Linear drain-source current relationship from 77 K to 300 K indicated the ohmic contact between edge WO2.57 and inner WSe2. Density functional theory calculations further revealed the WO2.57/WSe2 heterojunction formed a barrier-less charge distribution. These nm-scale FETs possessed remarkable electrical conductivity up to ~ 2600 S/m, ultra-low leakage current down to ~ 10-12 A, robustness for high voltage operation and air stability, which even outperformed pristine WSe2 FETs. Theoretical calculations revealed the high conductivity was exclusively attributed to the air-induced WO2.57 and its further carrier injection to WSe2.

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Section: Resultsmentioning

confidence: 89%

Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

Han

Liu

et al. 2019

Adv Materials Inter

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“…The pair-ing/bunching behavior was shown to be strongly dependent on the inter-dot coupling, and hence upon disorder [21]. Bunching behavior in our devices generally occurs for magnetic fields of at least ∼ 5 T. In disordered systems it is expected that the field enhances disorder: the wave function shrinks, leading to an enhancement of the effects of a localization potential (for a review, see [22]).…”

Section: Pumping In High B ⊥mentioning

confidence: 86%

Single- and few-electron dynamic quantum dots in a perpendicular magnetic field

Wright

Thorn

Blumenthal

et al. 2011

Journal of Applied Physics

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We present experimental studies of the current pumped through a dynamic quantum dot over a wide range of magnetic fields. At low fields we observe repeatable structure indicating increased confinement of the electrons in the dynamic dot. At higher fields (B > 3 T), we observe structure which changes markedly from device to device suggesting that in this regime the transport is sensitive to local disorder. The results are significant for the development of dynamic quantum dot pumps as quantum standards of electrical current.

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“…In this section we present a calculation of the thermopower α xx for a heavily-doped semiconductor, assuming for simplicity an isotropic band mass m and a fixed carrier concentration n. (In other words, we assume sufficiently high doping that carriers are not localized onto donor/acceptor impurities by magnetic freezeout. 13 ) This classic problem has been considered in various limiting cases by previous authors. 6,8,12,14 Here we briefly present a general calculation and recapitulate the various limiting cases, both for the purpose of conceptual clarity and to provide contrast with the semimetal case.…”

Section: Heavily-doped Semiconductorsmentioning

confidence: 99%

“…Heavily doped semiconductors In this subsection, we present a calculation of the thermopower S xx for a heavily doped semiconductor, assuming for simplicity an isotropic band mass m and a fixed carrier concentration n [in other words, we assume sufficiently high doping that carriers are not localized onto donor/acceptor impurities by magnetic freeze-out (13)]. This classic problem has been considered in various limiting cases by previous authors (6,8,12,14).…”

Section: Relation Between Seebeck Coefficient and Entropymentioning

confidence: 99%

Large, nonsaturating thermopower in a quantizing magnetic field

Skinner

2018

Sci. Adv.

111

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Metal-insulator transitions induced by a magnetic field

Cited by 34 publications

References 85 publications

Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

Single- and few-electron dynamic quantum dots in a perpendicular magnetic field

Large, nonsaturating thermopower in a quantizing magnetic field

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Metal-insulator transitions induced by a magnetic field

Cited by 34 publications

References 85 publications

Ambipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

Ambipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

Single- and few-electron dynamic quantum dots in a perpendicular magnetic field

Large, nonsaturating thermopower in a quantizing magnetic field

Contact Info

Product

Resources

About

Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides