2000
DOI: 10.1103/physrevb.62.7892
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Metal-insulator transitions inNdNiO3thin films

Abstract: We present a study of the crystallography and transport properties of NdNiO 3 thin films, grown by pulsedlaser deposition, on a variety of substrates and with a range of thicknesses. Results highlight the importance of epitaxy, and show that NdNiO 3 , with a sharp metal-insulator phase transition, can be fabricated without the need for high-pressure processing. The conductivity of the nickelate films was found to be well described by a linear sum of activated transport and Mott's variable range hopping in the … Show more

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Cited by 159 publications
(143 citation statements)
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“…Rare earth nickelates are found to exhibit variable range hopping at low temperatures 26,33 where it is energetically favorable for an electron to hop to a site that is closer in energy than the nearest neighbor leading to VRH and is given by…”
Section: Resultsmentioning
confidence: 99%
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“…Rare earth nickelates are found to exhibit variable range hopping at low temperatures 26,33 where it is energetically favorable for an electron to hop to a site that is closer in energy than the nearest neighbor leading to VRH and is given by…”
Section: Resultsmentioning
confidence: 99%
“…In case of NdNiO 3 , the low temperature resistivity behavior was modeled as a combination of activation and variable range hopping (VRH) 26 . SNO thin films have also been shown to exhibit variable range hopping at low temperatures 27 .…”
Section: Introductionmentioning
confidence: 99%
“…(Pbnm) to a monoclinic (P21/n) crystal structure. Further, the transition temperature depends on epitaxial strain [26], demonstrating sensitivity to lattice distortions.…”
Section: ! !mentioning
confidence: 99%
“…The metal-insulator transition in nickelates has been investigated so far using static experimental techniques that directly affect the electronic bandwidth through the Ni-O-Ni bond angle, such as chemical [14,15] and hydrostatic pressure [16,17] or epitaxial strain [18]. Recently it was also shown that electrostatic fields can be used to control the metal-insulator transition in these materials [19].…”
mentioning
confidence: 99%
“…Additionally, charge disproportionation between adjacent Ni sites is associated with different Ni-O bond lengths [11,12]. At low temperatures, the nickelates also possess an unusual antiferromagnetic spin arrangement [13].The metal-insulator transition in nickelates has been investigated so far using static experimental techniques that directly affect the electronic bandwidth through the Ni-O-Ni bond angle, such as chemical [14,15] and hydrostatic pressure [16,17] or epitaxial strain [18]. Recently it was also shown that electrostatic fields can be used to control the metal-insulator transition in these materials [19].…”
mentioning
confidence: 99%