Metal–insulator transition in narrow-band model with non-equivalent Hubbard sub-bands

Metal-insulator transition in a doubly orbitally degenerate model with correlated hopping

“…Thus both orbital degeneracy and correlated hopping are the factors favoring the transition of system to an insulating state in the case of half-filling with the increase of intra-atomic Coulomb repulsion in comparison with the single-band Hubbard model (in this connection see Refs. [35,37]).…”

“…MIT in a generalized Hubbard model with correlated hopping has been studied in a number of recent works [29][30][31][32][33][34][35][36][37][38]. In particular, at half-filling and t 0 = −X (or t AB = 0) some exact results have been found [29,[32][33][34].…”

“…For an arbitrary t 0 = −X (or t AB = 0) the finding of MIT criterion and the description of this phenomenon in a generalized Hubbard model with correlated hopping still remain an open problem. One of the step to solve this task is recent papers [30,31,[35][36][37][38] where criteria of MIT, ground state energy, concentration of doubly occupied sites have been found. In…”

Metal-Insulator Transition in a Generalized Hubbard Model with Correlated Hopping at Half-Filling

“…For an arbitrary t ′ = 0 (or t AB = 0) the finding of MIT criterion and the description of this phenomenon in a generalized Hubbard model with correlated hopping still remain an open problem. One of the step to solve this task is recent papers [18,19,22]- [25] where criteria of MIT, ground state energy, concentration of doubly occupied sites have been found. In Refs.…”

Temperature-Induced Metal-Insulator Transition in a Non-Symmetric Hubbard Model at Half-Filling

“…On the basis of an approach proposed in the papers [3,19] we have studied metal-insulator transition in a model of narrow-band material with non-equivalent Hubbard subbands (so-called "non-symmetric Hubbard model") at half-filling and zero temperature in the paper [20]. The present paper is devoted to a further study of metal-insulator transition in a model with non-equivalent Hubbard subbands, in particular, an investigation of temperature-induced metal-to-insulator transition.…”