Metal-insulator transition in epitaxial V1−xWxO2(≤x≤0.33) thin films

Shibuya, Keisuke; Kawasaki, Masashi; Tokura, Y.

doi:10.1063/1.3291053

Cited by 188 publications

(169 citation statements)

References 25 publications

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“…The reversibility of the physical properties is excellent. 9 The transition appears to be of the Mott-Hubbard type as inferred from recent work based on infrared spectroscopy, 10,11 resistivity, 12 photoemission, 13 and x-ray diffraction.…”

Section: Introductionmentioning

confidence: 96%

Nanothermochromics: Calculations for VO2 nanoparticles in dielectric hosts show much improved luminous transmittance and solar energy transmittance modulation

Li¹,

Niklasson²,

Granqvist³

2010

Journal of Applied Physics

238

192

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VO 2 -based films are thermochromic and show infrared reflectance above a "critical" temperature in the vicinity of room temperature. Implementations on energy efficient windows have been discussed for decades but have been severely curtailed since the luminous absorptance is undesirably large and the solar energy transmittance modulation is too small. Here we show by calculations based on effective medium theory that dilute composites with VO 2 nanoparticles embedded in hosts with properties mimicking glass or polymer can yield significantly decreased luminous absorption jointly with much enhanced transmittance modulation of solar energy. These results demonstrate that VO 2 -based nanothermochromics opens new avenues toward energy efficient fenestration.

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Section: Introductionmentioning

confidence: 96%

Nanothermochromics: Calculations for VO2 nanoparticles in dielectric hosts show much improved luminous transmittance and solar energy transmittance modulation

Li¹,

Niklasson²,

Granqvist³

2010

Journal of Applied Physics

238

192

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show abstract

“…This structural transformation accompanies a dramatic change in the 3d-band configuration with appearance of bandgap ∼0.6 eV [3], yielding abrupt changes of both electrical resistivity on the order of 10 4 −10 and the optical transmission in the infrared region. T MI can be varied over a wide range below room temperature (RT) by aliovalent ion doping [4], external strain [5], and an electric field application [6]. These features of the MI transition in VO 2 have proved to be useful in electrical and optical switching devices [7,8].…”

Section: Introductionmentioning

confidence: 99%

Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion

2015

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Insulator-to-metal (MI) phase transition in vanadium dioxide (VO 2 ) thin films with controlled lattice distortion was investigated by thermopower measurements. VO 2 epitaxial films with different crystallographic orientations, grown on (0001) α-Al 2 O 3 , (1120) α-Al 2 O 3 , and (001) TiO 2 substrates, showed significant decrease of absolute value of Seebeck coefficient (S) from ∼200 to 23 μV K −1 , along with a sharp drop in electrical resistivity (ρ), due to the transition from an insulator to a metal. The MI transition temperatures observed both in ρ(T ρ ) and S(T S ) for the VO 2 films systematically decrease with lattice shrinkage in the pseudorutile structure along the c axis, accompanying a broadening of the MI transition temperature width. Moreover, the onset T S , where the insulating phase starts to become metallic, is much lower than the onset T ρ . This difference is attributed to the sensitivity of S for the detection of hidden metallic domains in the majority insulating phase, which cannot be detected in ρ measurements. Consequently, S measurements provide a straightforward and excellent approach for a deeper understanding of the MI transition process in VO 2 .

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“…Chemical substitution of VO 2 with aliovalent ions of W 6+ is a classical way to effectively dope electrons 14) and reduce the T MI . 15) Abrupt changes in the S-values accompanied by MI transition were observed for all the films and the transition temperature of S decreased with x in good linear relation with T MI . We examined the electronic-structure changes of V 1¹x W x O 2 films across the MI transition by means of S measurements.…”

Section: Introductionmentioning

confidence: 83%

Characterization of electronic structure around metal–insulator transition in V1−xWxO2 thin films by thermopower measurement

Katase

Endo

Ohta

2015

J. Ceram. Soc. Japan

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Electronic structure across the metalinsulator (MI) transition of electron-doped V 1¹x W x O 2 epitaxial films (x = 00.06) grown on ¡-Al 2 O 3 substrates was studied by means of thermopower (S) measurements. Significant increase of «S«-values accompanied by MI transition was observed, and the transition temperatures of S (T S ) decreased with x in good linear relation with MI transition temperatures. «S« values of V 1¹x W x O 2 films at T > T S were constant at low values of 23¯V K ¹1 independently of x, which reflects a metallic electronic structure, whereas, those at T < T S almost linearly decreased with logarithmic W-concentrations. The gradient of ¹213¯V K ¹1 agrees well with ¹k B /e·ln10 (¹198¯V K ¹1), suggesting that V 1¹x W x O 2 films have insulating electronic structures with a parabolic density of state around the conduction band bottom.

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Metal-insulator transition in epitaxial V1−xWxO2(≤x≤0.33) thin films

Cited by 188 publications

References 25 publications

Nanothermochromics: Calculations for VO2 nanoparticles in dielectric hosts show much improved luminous transmittance and solar energy transmittance modulation

Nanothermochromics: Calculations for VO2 nanoparticles in dielectric hosts show much improved luminous transmittance and solar energy transmittance modulation

Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion

Characterization of electronic structure around metal–insulator transition in V<sub>1−</sub><i><sub>x</sub></i>W<i><sub>x</sub></i>O<sub>2</sub> thin films by thermopower measurement

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Metal-insulator transition in epitaxial V1−xWxO2(≤x≤0.33) thin films

Cited by 188 publications

References 25 publications

Nanothermochromics: Calculations for VO2 nanoparticles in dielectric hosts show much improved luminous transmittance and solar energy transmittance modulation

Nanothermochromics: Calculations for VO2 nanoparticles in dielectric hosts show much improved luminous transmittance and solar energy transmittance modulation

Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion

Characterization of electronic structure around metal&ndash;insulator transition in V<sub>1&minus;</sub><i><sub>x</sub></i>W<i><sub>x</sub></i>O<sub>2</sub> thin films by thermopower measurement

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Characterization of electronic structure around metal–insulator transition in V<sub>1−</sub><i><sub>x</sub></i>W<i><sub>x</sub></i>O<sub>2</sub> thin films by thermopower measurement