Metal-insulator-semiconductor-type organic light-emitting transistor on plastic substrate

Abstract

The authors report the characteristics of novel metal-insulator-semiconductor-type organic light-emitting transistors (MIS-OLETs). The drain current and luminescent intensity of the MIS-OLET can be controlled by changing hole injection carriers by applying a gate bias voltage. In addition, the high performance (400cd∕m2 at VD=−8V) of MIS-OLETs fabricated on a plastic substrate as well as on a glass substrate is demonstrated and described.

Analysis of metal-oxide-based charge generation layers used in stacked organic light-emitting diodes

“…The relative static permittivity used to determine the carrier concentration is 3.0 for the organic layers. 28 In the case of 1:1 Li:BCP, the electron concentration in BCP is calculated to be N d ϳ 10 19 cm −3 as inferred from the depletion width of 24 Å. 29 This is in agreement with the 1:1 molar ratio of Li:BCP doping concentration, suggesting one electron per Li atom.…”

Organic Light Emitting Field Effect Transistors: Advances and Perspectives

“…[62] The device structure and the optical image of the working device are shown in Figure 9c and d. [63] Exciting results for application of organic light emitting transistors in active matrix electroluminescent displays were obtained using a Metal Insulator Semiconductor-type Organic Light Emitting Transistor, (Figure 10a). [64] This structure is constituted by an OLED stacked on a typical top contact organic transistor where the cathode of the OLED acts as the drain electrode. An insulating layer on top of the source electrodes is employed to let the holes diffuse efficiently to the emitting layer, through the semiconductor layer.…”

Hole mobility in thermally evaporated pentacene: Morphological and directional dependence

“…1,4,15-21 So far, however, only a few studies concerned the transport perpendicular to the a-b plane, [9][10][11]22 as transport in this direction has never been of much interest in real devices. With the development of vertical transistor structures, [23][24][25][26][27][28][29] however, which may use pentacene or pentacenelike materials, a more complete understanding of the hole mobility in pentacene and its dependence on film morphology are required, as many of the pentacene VOFETs (Vertical Organic Field-Effect Transistors) presented to date rely on transport both in and out of the a-b plane. 23,24,[28][29][30] In this contribution, we investigate the effective hole mobility of pentacene, both in and out of the a-b plane, and demonstrate that the effects of morphology established for in-plane transport also play a significant role for out-of-plane transport.…”

“…With the development of vertical transistor structures, [23][24][25][26][27][28][29] however, which may use pentacene or pentacenelike materials, a more complete understanding of the hole mobility in pentacene and its dependence on film morphology are required, as many of the pentacene VOFETs (Vertical Organic Field-Effect Transistors) presented to date rely on transport both in and out of the a-b plane. 23,24,[28][29][30] In this contribution, we investigate the effective hole mobility of pentacene, both in and out of the a-b plane, and demonstrate that the effects of morphology established for in-plane transport also play a significant role for out-of-plane transport. Measurements are obtained via the conventional field-effect mobility measurement in OFET devices (for inplane transport) and a recently published method to extract charge carrier mobilities and their charge carrier density and field dependence from space charge limited current (SCLC) characteristics in basic hole-only devices of varying thickness, referred to as potential mapping (POEM).…”