Metal-insulator-semiconductor structure for deep-ultraviolet light-emitting diodes to increase the electron injection in the cathode region

Shao, Hua; Che, Jiamang; Kou, Jianquan; Chu, Chunshuang; Tian, Kangkai; Zhang, Yonghui; Bi, Wengang; Zhang, Zihui

doi:10.1016/j.spmi.2020.106467

Cited by 3 publications

(2 citation statements)

References 20 publications

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“…In addition, Shao et al improved the WPE of AlGaN-based DUV LEDs and reduced the contact resistance by adopting the metal-insulator-semiconductor (MIS) structure on the n-AlGaN layer [113]. As shown in Figure 9, the MIS structure can make the electron affinity band of a cathode metal higher than the conduction band of the n-AlGaN layer, which is conducive to the intraband tunneling effect of electrons.…”

Section: Increase the Wall-plug Efficiency Of Duv Ledsmentioning

confidence: 99%

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Research Progress of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Kang

Zhang

et al. 2023

Micromachines

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AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have great application prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to their advantages of energy conservation, environmental protection and easy miniaturization realization, they have garnered much interest and been widely researched. However, compared with InGaN-based blue LEDs, the efficiency of AlGaN-based DUV LEDs is still very low. This paper first introduces the research background of DUV LEDs. Then, various methods to improve the efficiency of DUV LED devices are summarized from three aspects: internal quantum efficiency (IQE), light extraction efficiency (LEE) and wall-plug efficiency (WPE). Finally, the future development of efficient AlGaN-based DUV LEDs is proposed.

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Section: Increase the Wall-plug Efficiency Of Duv Ledsmentioning

confidence: 99%

“…Φ R and Φ i stand for the barrier height for reference LED and different MIS-structured LEDs, respectively. Reproduced from Ref [113]. with permission from Elsevier.…”

mentioning

confidence: 99%

Research Progress of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Kang

Zhang

et al. 2023

Micromachines

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Synthesis of α-Fe2O3/g-C3N4 photocatalyst for high-efficiency water splitting under full light

Zhu

Liang

et al. 2020

Materials & Design

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On the impact of a metal–insulator–semiconductor structured n-electrode for AlGaN-based DUV LEDs

Shao¹,

Che²,

Chu³

et al. 2021

Appl. Opt.

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In this work, a 280 nm AlGaN-based deep ultraviolet light-emitting diode (DUV LED) with a metal–insulator–semiconductor (MIS) structured n-electrode is fabricated and studied. The S i O 2 insulator layer is adopted to form the MIS structure by using an atomic layer deposition system. After adopting the MIS-structured n-electrode, the S i O 2 intermediate layer enables electron affinity for the contact metal to be higher than the conduction band of the n-AlGaN layer, which favors the electrons to be injected into the n-AlGaN layer by intraband tunneling rather than thermionic emission. Moreover, the thin S i O 2 insulator can share the applied bias, which makes the n-AlGaN layer surface less depleted and thus further facilitates the electron injection. The improved electron injection capability at the metal–semiconductor interface helps reduce the contact resistance and increase electron concentration in the active region, which then improves external quantum efficiency and wall-plug efficiency for the proposed DUV LED.

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Metal-insulator-semiconductor structure for deep-ultraviolet light-emitting diodes to increase the electron injection in the cathode region

Cited by 3 publications

References 20 publications

Research Progress of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Research Progress of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Synthesis of α-Fe2O3/g-C3N4 photocatalyst for high-efficiency water splitting under full light

On the impact of a metal–insulator–semiconductor structured n-electrode for AlGaN-based DUV LEDs

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