Metal-insulator-semiconductor solar cells with silicon oxynitride tunnel insulator by using rapid thermal processing

Beyer, Andreas; Ebest, G.; Reich, R.

doi:10.1063/1.116382

Cited by 14 publications

(8 citation statements)

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“…2 In plasma-deposited silicon nitride films, this hydrogen originates from the precursor gases used in the deposition process, and it may be bonded to nitrogen and silicon or trapped in molecular or atomic form in microvoids within the network structure. 3,4,5 Silicon nitride is used in inversion layer solar cells, 6 thin film transistors, 7 and memory devices 8 because of its excellent dielectric properties. Particularly useful is its high dielectric permittiviy, which makes it a promising candidate to substitute silicon dioxide in the gate structure of field effect transistors.…”

Section: Introductionmentioning

confidence: 99%

Molecular models and activation energies for bonding rearrangement in plasma-depositeda−SiNx:Hdielectric thin films treated by rapid thermal annealing

et al. 2001

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Hydrogen and nitrogen release processes in amorphous silicon nitride dielectrics have been studied by MeV ion scattering spectrometry in combination with infrared spectroscopy. The outdiffusion of those light constituents was activated by the thermal energy supplied to the samples by rapid thermal annealing treatments. Molecular models of how these reactions proceed have been proposed based on the information obtained from the infrared spectra, and the validity of the models has been tested by an analysis of the activation energy of the desorption processes. For this purpose, the evolution of the hydrogen concentration versus the annealing temperature was fitted to an Arrhenius-type law obtained from a second-order kinetics formulation of the reactions that are described by the proposed structural models. It was found that the low values of the activation energies can be consistently explained by the formation of hydrogen bonding interactions between Si-H or N-H groups and nearby doubly occupied nitrogen orbitals. This electrostatic interaction debilitates the Si-H or N-H bond and favors the release of hydrogen. The detailed mechanism of this process and the temperature range in which it takes place depend on the amount and the proportion of hydrogen in Si-H and N-H bonds. Samples with higher nitrogen content, in which all bonded hydrogen is in the form of N-H bonds, are more stable upon annealing than samples in which both Si-H and N-H bonds are detected. In those nitrogen-rich films only a loss of hydrogen is detected at the highest annealing temperatures.

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Section: Introductionmentioning

confidence: 99%

Molecular models and activation energies for bonding rearrangement in plasma-depositeda−SiNx:Hdielectric thin films treated by rapid thermal annealing

et al. 2001

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“…Hydrogenated amorphous silicon nitride (a-SiN x :H) is a widely used material with many technological applications [1,2] . In recent years studies have been shown that, by changing the growth conditions, especially after the thermal annealing process [3,4] , silicon nano-dots are clearly observed in the Si-rich SiN x :H thin films deposited by plasma assisted processes.…”

Section: Introductionmentioning

confidence: 99%

Influence of annealing environment on the hydrogen related bonding structure in silicon nitride thin films containing silicon nanoparticles

Ding

et al. 2008

Optoelectronic Materials and Devices III

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The Si-rich SiN x :H films have been prepared by helicon wave plasma-enhanced chemical vapor deposition (HWP-CVD) technique. Parts of the samples have been post-annealed at 800 0 C in the H 2 , FG (10%H 2 in N 2 ), and N 2 ambient, respectively. Fourier transform infrared spectroscopy (FTIR) and the optical absorption spectroscopy have been used to investigate the influence of different annealing environment on the structural and optical properties of the films. After the thermal annealing process, there is a significant increase of Si-N bonding density. Meanwhile, the band related to hydrogen (N-H and Si-H) decreased which indicates that the hydrogen is effused out of the films during the annealing treatment. The Si-H stretching vibrations can be divided into three components by Gaussian distribution; the Si-H absorption band at different wave numbers corresponds to different configurations. The changes of the three peaks contributions decreased indicate that the configurations of the Si-H stretching vibrations band occurs restructuring in the different annealing environments. Furthermore, the investigation of the optical absorption spectroscopy suggests that the band gap E g decreased after the thermal annealing process. The decreased optical gap should be related to the loss of hydrogen and the slightly increase in the mean size of silicon nanoparticles, which is in good agreement with that of the hydrogen bonding structure.

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“…No entanto, no caso LPD, o tempo de preparação é longo e não existe um controle exato da espessura (CHEN, 2002;YEH, 1994;1995 (TOQUETTI, 2005;SANTOS, 1995(c); NULMAN, 1986;MOSLEHI, 1989;CHIOU, 1990;2004(b); GAVARTI, 2005). (LU, 1995;BEYER, 1996;YAO, 1994;CHANG, 2004(b) Deve-se tomar um cuidado rigoroso com a proporção molar da mistura de H2/O2, pois caso esta seja maior do que 2, a mistura torna-se explosiva ao ser injetada em um forno aquecido (SOUZA, 2006).…”

Section: 05unclassified

Fabricação de células solares MOS utilizando oxinitretos de silício obtidos por processamento térmico rápido (RTP).

Christiano¹

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Metal-insulator-semiconductor solar cells with silicon oxynitride tunnel insulator by using rapid thermal processing

Cited by 14 publications

References 0 publications

Molecular models and activation energies for bonding rearrangement in plasma-depositeda−SiNx:Hdielectric thin films treated by rapid thermal annealing

Molecular models and activation energies for bonding rearrangement in plasma-depositeda−SiNx:Hdielectric thin films treated by rapid thermal annealing

Influence of annealing environment on the hydrogen related bonding structure in silicon nitride thin films containing silicon nanoparticles

Fabricação de células solares MOS utilizando oxinitretos de silício obtidos por processamento térmico rápido (RTP).

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