2012
DOI: 10.1134/s1063783412120268
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Metal-insulator phase transition and electrical switching in manganese dioxide

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Cited by 12 publications
(13 citation statements)
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“…Electrical forming results in the changes in oxygen stoichiometry conditioned by the ionic processes in electric fields close to the MOM structure breakdown field. This picture is quite similar to what is observed in many other TMOs exhibiting the insulator-to-metal transitions [15,22,27,[33][34][35]. The results obtained concerning the threshold switching in thin-film MOM structures with molybdenum oxides indicate the possibility of application of this material in oxide electronics as micro-and nanostructured switching elements and other electronic devices.…”
Section: Resultssupporting
confidence: 73%
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“…Electrical forming results in the changes in oxygen stoichiometry conditioned by the ionic processes in electric fields close to the MOM structure breakdown field. This picture is quite similar to what is observed in many other TMOs exhibiting the insulator-to-metal transitions [15,22,27,[33][34][35]. The results obtained concerning the threshold switching in thin-film MOM structures with molybdenum oxides indicate the possibility of application of this material in oxide electronics as micro-and nanostructured switching elements and other electronic devices.…”
Section: Resultssupporting
confidence: 73%
“…Next we note that, unlike the most other TMOs [22,27], the process of electroforming in Mo-based structures was hindered, similarly to that in structures based on manganese and yttrium oxides [33,34]; that is, the conventional electrical breakdown often occurred, not the formation of a switching channel. However, for the Mo oxide films prepared by vacuum deposition, the processes of electroforming and switching were more stable which allowed in this case observation of the transformation of I-V curves at a temperature change.…”
Section: Resultsmentioning
confidence: 99%
“…Originally, MnOB 2 B has been widely used as a cathode material for oxide-semiconductor capacitors based on tantalum, niobium and aluminum oxides, and the most important properties of the material for this application are its high conductivity and ability to thermal phase transition into the lower valence states accompanied by evolution of atomic oxygen, while the resistance increases by 3-4 orders of magnitude (see, e.g. [3] and references therein). Much attention is currently paid to various other properties of MnOB 2 B , such as, for example, the electrochromic effect [4], thermopower wave phenomenon [5], supercapacitive behavior [6], memory and threshold switching [3], [7], [8].…”
mentioning
confidence: 99%
“…Much attention is currently paid to various other properties of MnOB 2 B , such as, for example, the electrochromic effect [4], thermopower wave phenomenon [5], supercapacitive behavior [6], memory and threshold switching [3], [7], [8]. Also, there are a number of papers [9]- [11] describing an anomaly in the MnOB 2 B conductivity near the Neel temperature which is shown to be associated with the metal-insulator transition [3]. That is why the electrical properties of MnOB 2 B are of especial scientific interest and applied importance.…”
mentioning
confidence: 99%
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