Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors

Aghamalyan, N. R.; Aslanyan, T. A.; Vardanyan, E. S.; Kafadaryan, Y. A.; Hovsepyan, Roman; Petrosyan, S. I.; Poghosyan, Armen

doi:10.3103/s1068337212060059

Cited by 6 publications

(5 citation statements)

References 8 publications

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“…The electrons are described as a tight binding model, see Figure 2, where the splitting into valence and conduction band symmetrically to the Fermi level is included by means of the Coulomb interaction U, see Figure 2b. The ZnO gap assumes the value of 3.38 eV [16,17]. The first term in the Hamiltonian…”

Section: Hubbard Model For Excitons and Exciton-polaritonsmentioning

confidence: 99%

“…These peaks give evidence that such a sample may undergo a transition towards exciton-polariton lasing rather than a transition to exciton-photon lasing, at least a coexistence of both regimes may occur. ZnO is known for excellent light-matter coupling characteristics [7,[14][15][16][17][18][19][20][21][22][23][24][25][26][27]; it is predestined for this study. It has been experimentally derived that ZnO can be considered as a Mott insulator under certain conditions [16,18].…”

Section: Introductionmentioning

confidence: 99%

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Quantum Many-Body Theory for Exciton-Polaritons in Semiconductor Mie Resonators in the Non-Equilibrium

Lubatsch

Frank

2020

Applied Sciences

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We implement externally excited ZnO Mie resonators in a framework of a generalized Hubbard Hamiltonian to investigate the lifetimes of excitons and exciton-polaritons out of thermodynamical equilibrium. Our results are derived by a Floquet-Keldysh-Green's formalism with Dynamical Mean Field Theory (DMFT) and a second order iterative perturbation theory solver (IPT). We find that the Fano resonance which originates from coupling of the continuum of electronic density of states to the semiconductor Mie resonator yields polaritons with lifetimes between 0.6 ps and 1.45 ps. These results are compared to ZnO polariton lasers and to ZnO random lasers. We interpret the peaks of the exciton-polariton lifetimes in our results as a sign of gain narrowing which may lead to stable polariton lasing modes in the single excited ZnO Mie resonator. This form of gain may lead to polariton random lasing in an ensemble of ZnO Mie resonators in the non-equilibrium. PACS: 42.55.-f lasers; 71.10.-w theories and models of many-electron systems; 42.50.Hz strong-field excitation of optical transitions in quantum systems; multi-photon processes; dynamic Stark shift; 74.40+ Fluctuations; 03.75.Lm Tunneling, Josephson effect, Bose-Einstein condensates in periodic potentials, solitons, vortices, and topological excitations; 72.20.Ht high-field and nonlinear effects; 71.36.+c polaritons; 71.35.-y excitons and related phenomena; 42.55.Px semiconductor lasers, laser diodes; 89.75.-k complex systems

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Section: Hubbard Model For Excitons and Exciton-polaritonsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Quantum Many-Body Theory for Exciton-Polaritons in Semiconductor Mie Resonators in the Non-Equilibrium

Lubatsch

Frank

2020

Applied Sciences

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“…2(b). The ZnO gap assumes the value of 3.38 eV [23,24]. The first term in the Hamiltonian ∑ i,σ ε i c † i,σ c † i,σ denotes the local onsite potential.…”

Section: Hubbard Model For Excitons and Exciton-polaritonsmentioning

confidence: 99%

“…These peaks give evidence that such a sample may undergo a transition towards exciton-polariton lasing rather than a transition to exciton-photon lasing, at least a coexistence of both regimes may occur. ZnO is known for excellent light-matter coupling characteristics [7,14,15,[23][24][25][26][27][28][29][30][31][32][33][34], it is predestined for this study. It has been experimentally derived that ZnO can be considered as a Mott insulator under certain conditions [23,25].…”

Section: Introductionmentioning

confidence: 99%

Quantum Many-Body Theory for Exciton-Polaritons in Semiconductor Mie Resonators in the Non-Equilibrium

Lubatsch,

Frank

2020

Preprint

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“…Zn 1−x Li x O y thin films can be employed simultaneously as a channel of the field-effect transistor and a bi-stable ferroelectric element for information recording. 1 The structure of a memory element based on Zn 1−x Li x O y is fatigue-resistant even in the cases of repetitive readouts. This will significantly increase performance of memory devices.…”

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confidence: 99%

Influence of the Electronic State of Atoms on High-Temperature Ferromagnetism of Lithium-Doped ZnO Thin Films

Kuz’mina

Kuz'min

Kabarbo

et al. 2021

ECS J. Solid State Sci. Technol.

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This paper discusses the results of structural and magnetic measurements of Zn 1−x Li x O y thin films (x = 0-0.06) synthesized by the PLD method under various conditions, as well as the results of analysis of the electronic state of atoms. It was discovered that all Zn 1−x Li x O y thin films contain a single ZnO phase with a wurzite structure (P6 3 /mc) oriented along the c-direction. Thickness (90-117 nm) and roughness (2-7 nm) of the synthesized films were determined. A high-temperature ferromagnetism was detected in Zn 1-x Li x O y thin films (x = 0.02-0.06); it increased upon the increase in lithium concentration. Interstitial lithium atoms (Li i ) were assumed to play a special role in its occurrence.

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Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors

Cited by 6 publications

References 8 publications

Quantum Many-Body Theory for Exciton-Polaritons in Semiconductor Mie Resonators in the Non-Equilibrium

Quantum Many-Body Theory for Exciton-Polaritons in Semiconductor Mie Resonators in the Non-Equilibrium

Quantum Many-Body Theory for Exciton-Polaritons in Semiconductor Mie Resonators in the Non-Equilibrium

Influence of the Electronic State of Atoms on High-Temperature Ferromagnetism of Lithium-Doped ZnO Thin Films

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