Metal Halide Perovskite-Based Memristors for Emerging Memory Applications

Abstract

There is an increased demand for next-generation memory devices with high density and fast operation speed to replace conventional memory devices. Memristors are promising candidates for next-generation memory devices because of their scalability, stable data retention, low power consumption, and fast operation. Among the various types of memristors, halide perovskites exhibit potential as emerging materials for memristors by using hysteresis based on the movement of defects or ions in halide perovskites. However, research on the implementation of perovskite materials as memristors is in its early stages; some challenges and problems must be solved to enable the practical application of halide perovskites for next-generation memory devices. From this perspective, we highlight the recent progress in memristors that use halide perovskites. Moreover, we introduce a strategy to enhance the performance and analyze the operation mechanism of memory devices that use halide perovskites. Finally, we summarize the challenges in the development of device technology to use halide perovskites in next-generation memory devices.

Halide perovskite photoelectric artificial synapses: materials, devices, and applications

“…Moreover, HPs could be successfully applied in the development of some novel electronic devices, such as resistance random access memory, artificial synapses, etc. [15][16][17][18][19] As the demand for data processing capability has substantially increased, the traditional von Neumann architecture has…”

“…Moreover, HPs could be successfully applied in the development of some novel electronic devices, such as resistance random access memory, artificial synapses, etc . 15–19…”

Probing the Photo-Activated Switching Dynamics of Halide Perovskite Memristors

“…This is because of the growing need for neural network setups that require various levels of computational complexity, − which, in turn, demands advanced hardware. Among the different hardware technologies, memristor devices are believed to be the most promising candidate for next-generation computing frameworks due to their in-memory and neuromorphic computing capabilities. , Memristor devices offer several advantages, such as simple structure, high device density, low power consumption, fast switching speed, and compatibility with complementary metal/oxide/semiconductor CMOS technology. , Different applications of memristors require the devices to have specific switching characteristics. , Non-volatile binary switches are used for digital memory and spiked neural networks. , Conversely, volatile analogue switches are used for artificial neural network configurations and brain-like computers …”

Mechanistic and Kinetic Analysis of Perovskite Memristors with Buffer Layers: The Case of a Two-Step Set Process

“…Artificially intelligent devices have recently been attracting considerable attention due to the increasing hardware demands of neural network configurations with varying levels of computational complexity. − Resistive random-access memory (ReRAM) based on memristor devices is widely considered as the most promising candidate for next-generation computational frameworks owing to their in-memory and neuromorphic computing capabilities. − This includes their simple device structure, high device density, low power consumption, fast switching speed, and monolithic integration compatibility with existing complementary metal/oxide/semiconductor (CMOS) systems. ,, Resistive switching has been demonstrated in a diverse range of devices such as metal/oxide/metal structures, − organic semiconductors, − CMOS-compatible silicon-based devices, − and numerous halide perovskite formulations. − …”