Metal–Germanium–Metal Photodetectors on Heteroepitaxial Ge-on-Si With Amorphous Ge Schottky Barrier Enhancement Layers

Oh, Jungwoo; Banerjee, S.; Campbell, Joe C.

doi:10.1109/lpt.2003.822258

Cited by 68 publications

(26 citation statements)

References 10 publications

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“…The results show that the Ge layers are p-type with hole mobility of 290 and 550 cm 2 /V s for Ge seed layer grown at 330 1C (sample A) and 350 1C (sample B), respectively. This is closely associated with the structural defects in the Ge layers, which leads to acceptor states near the valance band edge [16]. The relatively higher mobility of sample B indicates that its defect density is much lower, in accordance to the EPD results.…”

Section: Hall Hole Mobilitysupporting

confidence: 78%

The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

Zhou

Lai

et al. 2008

Journal of Crystal Growth

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Section: Hall Hole Mobilitysupporting

confidence: 78%

The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

Zhou

Lai

et al. 2008

Journal of Crystal Growth

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“…Furthermore, Ge has a lattice constant that is perfectly matched to gallium arsenide (GaAs) (0.07% at 300 K), which can be used as a buffer layer for integration of GaAs based devices on Si substrate. [1][2][3][4] One of the important parameters in determining the device worthiness of epitaxially deposited layers is the epilayers' threading dislocation density (TDD). Due to a large lattice mismatch between Ge and Si, a large number of misfit dislocations (MD) and TDD, on the order of 10 10 cm −2 , may be generated in the heterostructure when Ge is grown directly on Si substrate.…”

mentioning

confidence: 99%

Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

et al. 2015

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A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressure chemical vapour deposition. The Ge epilayer is then bonded and transferred to another Si (001) handle wafer to form a germanium-on-insulator (GOI) substrate. The misfit dislocations, which are initially hidden along the Ge/Si interface, are now accessible from the top surface. These misfit dislocations are then removed by annealing the GOI substrate. After the annealing, the TDD of the Ge epilayer can be reduced by at least two orders of magnitude to <5 × 106 cm−2.

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“…In an attempt to resolve challenge (i), germanium (Ge), which has a lattice constant perfectly matched to GaAs (0.07% at 300 K) and superior electron and hole mobility compared with Si, can be grown on Si to provide a buffer layer for integration and fabrication of GaAsbased devices on a Si substrate. [12][13][14][15] Since Ge and GaAs have diamond and zincblende structure, respectively, two possible sublattice allocations are possible for the GaAs layer, although they have exactly the same crystal structure. In one allocation, Ga atoms occupy the face-centered cubic (FCC) sublattice containing the cubic corners, whereas in the other allocation, As atoms occupy this FCC sublattice.…”

Section: Introductionmentioning

confidence: 99%

Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

Lee

Tan

Jandl

et al. 2013

Journal of Elec Materi

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The quality of germanium (Ge) epitaxial films grown directly on silicon (Si) (001) with 0°and 6°offcut orientation using a reduced-pressure chemical vapor deposition system is studied and compared. Ge film grown on Si (001) with 6°offcut presents $65% higher threading dislocation density and higher root-mean-square (RMS) surface roughness (1.92 nm versus 0.98 nm) than Ge film grown on Si (001) with 0°offcut. Plan-view transmission electron microscopy also reveals that threading dislocations are more severe (in terms of contrast and density) for the 6°offcut. In addition, both high-resolution x-ray diffraction and Raman spectroscopy analyses show that the Ge epilayer on 6°offcut wafer presents higher tensile strain. The poorer quality of the Ge film on Si (001) with 6°offcut is a result of an imbalance in Burgers vectors that favors dislocation nucleation over annihilation.

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Metal–Germanium–Metal Photodetectors on Heteroepitaxial Ge-on-Si With Amorphous Ge Schottky Barrier Enhancement Layers

Cited by 68 publications

References 10 publications

The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

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