Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors

Atanassova, E.; Spassov, D.; Paskaleva, A.

doi:10.1016/j.microrel.2006.10.001

Cited by 4 publications

(3 citation statements)

References 12 publications

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“…W is chosen as a metal electrode in these investigations due to its chemical and thermal stability (W does not react with Ta 2 O 5 below 1100 K) [32]. Recently [6,14,[33][34][35], in a number of papers, we have shown that the sputtered W layer is a good candidate as a top electrode of storage capacitors in DRAMs giving a stable contact with Ta 2 O 5 . Frequency dependent capacitance-voltage (C-V ) measurements were performed to obtain information on the trap density and their spatial location in the interfacial layer.…”

Section: Methodsmentioning

confidence: 99%

Impact of Si substrate nitridation on electrical characteristics of Ta₂O₅stack capacitors

Paskaleva

Spassov²,

Atanassova

2007

J. Phys. D: Appl. Phys.

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A comparison of the effect of rapid thermal nitridation (RTN) of the Si surface in N2O and NH3 ambient at different temperatures (700–850 °C) on the dielectric and electrical characteristics of thin (∼20 nm) Ta2O5 stacks has been made. The electrical parameters of capacitors (film permittivity, oxide charge, densities of bulk traps, interface and slow states, leakage current) are discussed in terms of the impact of N incorporation in the interface region. The films on both types of RTN-treated Si exhibit ∼100 times lower leakage current than Ta2O5 on bare Si, but among the two RTN processes NH3 nitridation is more beneficial since only it simultaneously increases also the stack permittivity. This improvement in parameters is suggested to be due to a real nitridation of Si surface which occurs under the NH3 rapid thermal process. RTN in N2O does not produce resistance to the oxidation substrate and it could explain the observed lack of stack dielectric constant improvement. The composition of the interfacial layer under NH3 RTN appears to be TaSi-oxinitride-like, while the interface region at N2O-nitrided Si seems to be SiO2-like. Each RTN process, however, modifies the Si surface and constitutes a specific interface layer different from that at the bare Si substrate. The composition of this layer defines parameters of the traps close to the substrate, the barrier height at the Ta2O5/interface layer and influences the conduction mechanisms in the stacks.

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Section: Methodsmentioning

confidence: 99%

Impact of Si substrate nitridation on electrical characteristics of Ta₂O₅stack capacitors

Paskaleva

Spassov²,

Atanassova

2007

J. Phys. D: Appl. Phys.

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“…102 The electrospinning induces orientation along the axis of a fiber by strong stretching forces associated with electric potential. 102 Another metal oxide tantalum pentoxide (Ta 2 O 5 ) has been widely investigated because of its promising application in MOM or MOS capacitors 108,109 wave-guides. 110 Dharmaraj et al 111 have recently demonstrated that tantalum pentoxide nanofibers can be conveniently prepared by electrospinning.…”

Section: Optoelectronicsmentioning

confidence: 99%

Electrospun nanofibers in energy and environmental applications

Thavasi

Singh

Ramakrishna

2008

Energy Environ. Sci.

872

532

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“…The effect of the metal gate on the conduction mechanisms is illustrated by the results obtain for Ta 2 O 5 with Al, W and TiN gate electrode MIS capacitors. Two types of Ta 2 O 5 layers were studied: reactively sputtered, and thermally oxidized Ta 2 O 5 [67,68].…”

Section: Effect Of the Top (Gate) Metal Electrodementioning

confidence: 99%

Consideration of conduction mechanisms in high-k dielectric stacks as a tool to study electrically active defects

2017

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In this paper conduction mechanisms which could govern the electron transport through high-k dielectrics are summarized. The influence of various factors - the type of high-k dielectric and its thickness; the doping with a certain element; the type of metal electrode as well as the measurement conditions (bias, polarity and temperature), on the leakage currents and dominant conduction mechanisms have been considered. Practical hints how to consider different conduction mechanisms and to differentiate between them are given. The paper presents an approach to assess important trap parameters from investigation of dominant conduction mechanisms.

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Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors

Cited by 4 publications

References 12 publications

Impact of Si substrate nitridation on electrical characteristics of Ta₂O₅stack capacitors

Impact of Si substrate nitridation on electrical characteristics of Ta₂O₅stack capacitors

Electrospun nanofibers in energy and environmental applications

Consideration of conduction mechanisms in high-k dielectric stacks as a tool to study electrically active defects

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Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors

Cited by 4 publications

References 12 publications

Impact of Si substrate nitridation on electrical characteristics of Ta2O5stack capacitors

Impact of Si substrate nitridation on electrical characteristics of Ta2O5stack capacitors

Electrospun nanofibers in energy and environmental applications

Consideration of conduction mechanisms in high-k dielectric stacks as a tool to study electrically active defects

Contact Info

Product

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Impact of Si substrate nitridation on electrical characteristics of Ta₂O₅stack capacitors

Impact of Si substrate nitridation on electrical characteristics of Ta₂O₅stack capacitors