Metal-gallium selenide interfaces-observation of the true Schottky limit

Hughes, G.; McKinley, A; Williams, R. H.; McGovern, I.T.

doi:10.1088/0022-3719/15/6/007

Cited by 52 publications

(16 citation statements)

References 7 publications

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“…The I D – V DS curves around the origin (Figure S7 in Supporting Information) show near linear and symmetrical dependences. It should also be mentioned that GaSe interfaces with various metals, including interacting (Cu, Al, Ni, In) and non‐interacting (Au, Ag, Sn), have been previously reported showing no Fermi pinning effect for non‐interacting metals such as gold …”

Section: Resultsmentioning

confidence: 98%

Pulsed Laser Deposition of Photoresponsive Two‐Dimensional GaSe Nanosheet Networks

Mahjouri‐Samani

Gresback

Tian

et al. 2014

Adv Funct Materials

113

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Synthesis of functional metal chalcogenide (GaSe) nanosheet networks by stoichiometric transfer of laser‐vaporized material from bulk GaSe targets is presented. Uniform coverage of interconnected, crystalline, and photoresponsive GaSe nanosheets in both in‐plane and out‐of‐plane orientations are achieved under different ablation conditions. The propagation of the laser‐vaporized material is characterized by in situ ICCD‐imaging. High (1 Torr) Ar background gas pressure is found to be crucial for the stoichiometric growth of GaSe nanosheet networks. Individual 1–3 layer GaSe triangular nanosheets of ≈200 nm domain size are formed within 30 laser pulses, coalescing to form nanosheet networks in as few as 100 laser pulses. The thickness of the deposited networks increases linearly with pulse number, adding layers in a two‐dimensional (2D) growth mode. GaSe nanosheet networks show p‐type semiconducting characteristics with mobilities reaching as high as 0.1 cm2V−1s−1. Spectrally‐resolved photoresponsivities and external quantum efficiencies range from 0.4 AW−1 and 100% at 700 nm, to 1.4 AW−1 and 600% at 240 nm, respectively. Pulsed laser deposition under these conditions appears to provide a versatile and rapid approach to stoichiometrically transfer and deposit functional networks of 2D nanosheets with digital thickness control and uniformity for a variety of applications.

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Section: Resultsmentioning

confidence: 98%

Pulsed Laser Deposition of Photoresponsive Two‐Dimensional GaSe Nanosheet Networks

Mahjouri‐Samani

Gresback

Tian

et al. 2014

Adv Funct Materials

113

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“…At sufficiently low voltages in the Schottky barrier region, the data of the forward bias I-V characteristics for the b-axis measurement were analyzed. The common analysis of the curve in this region is based on thermionic emission theory in which the current voltage characteristics is described by the relation [21][22][23][24][25] …”

Section: Resultsmentioning

confidence: 99%

Properties of Tl4Se3S single crystals and characterization of Ag/Tl4Se3S Schottky barrier diodes

Qasrawi

Gasanly

2010

Current Applied Physics

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“…There are some research about metal contact to gallium selenide had been published on the reports. J. Hughes et al [8] discussed the Fermi level un-pinning effect of the metal contact to GaSe. Gozzo et al [9] studied the material characteristics of gold contact to GaSe, but lack of electrical characteristics.…”

Section: -6×10mentioning

confidence: 99%

The contact characteristics of Al p‐GaSe Schottky diode

Huang¹,

Horng

Chen

et al. 2008

Phys. Status Solidi (c)

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The Schottky barrier characteristics of Al on a Bridgman grown p‐GaSe layered semiconductor have been investigated using current‐voltage‐temperature (I‐V‐T) characteristics over a temperature range of 198 K∼373 K. The forward I‐V‐T data reveals a decrease at the barrier height, but an increase at the ideality factor with decreasing in measurement temperature. For the 300 °C‐annealed diode, the barrier height decreased from 1.04 eV to 0.6 eV and the ideality increased from 1.4 to 2.4, as the temperature decreased from 373 K to 198 K. The Richardson plot showed activation energy of 0.26 eV at high temperature region, while showed a lower energy of 0.07eV at low temperature region. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Metal-gallium selenide interfaces-observation of the true Schottky limit

Cited by 52 publications

References 7 publications

Pulsed Laser Deposition of Photoresponsive Two‐Dimensional GaSe Nanosheet Networks

Pulsed Laser Deposition of Photoresponsive Two‐Dimensional GaSe Nanosheet Networks

Properties of Tl4Se3S single crystals and characterization of Ag/Tl4Se3S Schottky barrier diodes

The contact characteristics of Al p‐GaSe Schottky diode

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