Metal Filmed‐Semiconductor Photoelectrochemical Cells

Menezes, S.; Heller, Adam; Miller, B. I.

doi:10.1149/1.2129869

Cited by 52 publications

(51 citation statements)

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“…We (1) and others (2)(3)(4)(5) have also shown how redox kinetics at this overlayer plays a crucial role in the solar-conversion efficiency of devices based on this "heterojunction-photoelectrode" concept. We (1) and others (2)(3)(4)(5) have also shown how redox kinetics at this overlayer plays a crucial role in the solar-conversion efficiency of devices based on this "heterojunction-photoelectrode" concept.…”

mentioning

confidence: 87%

“…[2] vs. the redox potential for selected compounds in Table I. [2] vs. the redox potential for selected compounds in Table I.…”

Section: Correlation Of Ito Electrochemical Behavior With Photoelectrmentioning

confidence: 99%

“…(6). A separate determination of 5~ is therefore required in order to measure Dr, as was done in (2). Steady-state measurements (e.g., I vs. gt 1/~ plots with a RDE) have been mainly carried out so far, and they yield the diffusion rate Df/Sf through the porous layer, a quantity which is otherwise referred to as the layer permeability (4).…”

Section: F Moranmentioning

confidence: 99%

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Heterojunction Photoelectrodes: IV . Electrochemistry and Photoelectrochemistry at Indium Tin Oxide/Nonaqueous Electrolyte Interfaces

Rajeshwar²

1987

J. Electrochem. Soc.

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The kinetic facility of charge transfer was studied by cyclic voltammetry (CV) at Smdoped indium oxide (ITO) electrode/acetonitrile interfaces for 18 one-electron outer-sphere redox systems. The results were compared with Pt, and the relative trends in redoxkinetics were analyzed from a phenomenological viewpoint. The strong dependency of redox kinetics at the ITO surface on the location of electrolyte energy levels (redox potential) argues against the complete transparency of the space-charge layer in ITO to electron tunneling processes. The new results seem to be consistent with a model proposed by previous authors, which considers mediation of electron tunneling by deep-lying donor states in the space-charge region. For positive-lying redox systems, this mediation step is rate determining. For redox systems lying at potentials negative enough to overlap with the ITO conduction bandedge, a direct and facile charge transfer process seems to prevail. The implications of these kinetics trends in the use of ITO electrodes as a corrosion-resistant coating for n-Si and p-Si photoelectrode surfaces are next analyzed using CV and steady-state voltammetry. Correlations of the photopotentials measured at n-Si/ITO and p-Si/ITO for selected nonaqueous redox systems with redox potentials and kinetics parameters are finally presented, and the trends compared with "naked" Si surfaces. It is shown that CV is a more sensitive probe of kinetics effects than the steady-state scanning mode. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-04-13 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-04-13 to IP

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mentioning

confidence: 87%

“…[2] vs. the redox potential for selected compounds in Table I. [2] vs. the redox potential for selected compounds in Table I.…”

Section: Correlation Of Ito Electrochemical Behavior With Photoelectrmentioning

confidence: 99%

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Heterojunction Photoelectrodes: IV . Electrochemistry and Photoelectrochemistry at Indium Tin Oxide/Nonaqueous Electrolyte Interfaces

Rajeshwar²

1987

J. Electrochem. Soc.

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“…The noble metal coating also displayed catalytic activity to enhance electrode reactions (2). Later, the stabilization effect by surface layers of noble metals (3,4), metal oxides (5-I5), metal silicides (16,17), and organic materials (18)(19)(20)(21)(22)(23)(24)(25) has been studied.…”

Section: Introductionmentioning

confidence: 99%

Metal oxide coated p–n junction silicon electrodes for photoelectrochemical solar energy conversion

Tsubomura¹,

Nakato²,

Hiramoto³

et al. 1985

Can. J. Chem.

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This paper is dedicated lo Professor Camille Srrrzrlor/y 011 rlze occrrsiorr of his 65111 birrhrlayHIROsHl TSUBOMURA, YOSHIHIRO NAKATO, MASAHIRO HIRAMOTO, and HIROYUKI YANO. Can. J. Chem. 63, 1759Chem. 63, (1985. Photoelectrochemical propcrties of p-'-n junction silicon electrodes, abbreviatcd as p+n-Si, coated with thin oxide films of titanium, tungstcn, or iron have been investigated in aqueous solutions of hydrogen iodide and iodine. The films were deposited by electron-beam evaporation of the mctal oxide sinters. The photocurrent in a p'n-Si elcctrodc coated with TiO' increased dramatically when it was heatcd at temperatures highcr than 500°C, though the O/Ti atomic ratio as determined by ESCA analysis was unchanged. The fill factor of the photovoltaic cell composcd of this clcctrode, a platinum counter electrode and an aqueous solution of 7.6 M HI and 0.03 M 1' was improvcd by coating with ruthcnium or its oxide. Thc photovoltaic cell attained a high solar to electrical cnergy convcrsion efficiency of 9.3% (AMI), with an opcn circuit photovoltage of 0.58 V , a short circuit photocurrcnt of 26.6 mA cm-' and a fill factor of 0.61. The photocurrent was stable for 350 h. For the cases of electrodes coated with a FczO, or WO, film. high fill factors were obtained evcn without ruthenium coating. Thc effect of the nature of Si -metal oxide junctions, the donor density in the oxide, the relations between the flat band potential of the oxide and the redox potential of the solution, etc., on the conversion efficicncy was discussed.HlRos~l TSUBOMURA, YOSHIH~RO NAKATO, MASAHIRO HIRAMOTO et HIROYUKI YANO. Can. J . Chcm. 63, 1759 (1985). Optrant dans des solutions aqueuscs d'iodurc d'hydrogene et d'iode, on a CtudiC Ics proprittts phototlcctrochimiqucs d'tlectrodes de silicium, a jonction p+-n rcprksentCes par p 'n-SI, recouvertes dc minces couches d'oxydes dc titane, de tungstkne ou de fer. On a dtpost les films en faisant appel i I'dvaporation par faisceaux d'dlectrons dc frittages d'oxydes de mCtaux. Le courant photoClectrique de I'Clectrode p+n-Si sur laquelle on a dtposd du TiOl augmcnte d'une f a~o n dramatique lorsqu'on la chauffe i des temptraturcs suptrieurcs h 500°C; on obtient ce rCsultat meme si le rapport atomlque dc O/Ti, tcl que dCtermint par une analysc ESCA, dcmeure inchange. Le facteur de remplissage dc la cellule photovoltai'que composte de cette tlectrode, d'une contre-dlcctrode de platine et d'une solution aqueuse 7,6 M cn HI ct 0,03 M en I? augmente si I'on y dCposc du ruthCnium ou son oxyde On peut atteindre un haut dcgrd (9,3% AMI) d'cfficacitd pour la conversion de I'tnergie solaire en tncrgie Clcctrique SI I'on opkre avcc un photovoltage en circuit ouvcrt de 0,58 V , un photocourant dc court circuit de 26,6 m~c m -' et un facteur de rcmplissage dc 0,61. Le photocourant s'cst avdrd stable pour 350 h. Dans les cas des Clectrodes sur IesqueIles on a dCposC dcs films de FeZO, ou de WO,, on a pu obtenir des factcurs dc remplissage tlevds sans mCme dCposer du ruthenium. On discutc dc I'cffct de la n...

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“…The first one consists of protecting the semiconductor surface by a thin metal layer (1)(2)(3)(4)(5)(6)(7), an organic polymer film (8,9), or an oxide coating (10)(11)(12). It depends on the kinetic competition between the surface corrosion process and the redox reaction.…”

mentioning

confidence: 99%

Stabilization of n ‐ GaAs in Acidic Concentrated Iodide Electrolytes

Allongue

Cachet

Cléchet

et al. 1987

J. Electrochem. Soc.

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Although n-GaAs is known to be unstable in presence of iodine, it is shown that this semiconductor can be efficiently stabilized by using highly concentrated acidified iodide aqueous solutions. The effects of proton activity and iodine and iodide concentrations on the electrode stability are investigated by means of rotating ring-disk experiments, RHEED observations, and chemical analysis of the electrolyte. Impedance measurements show a positive shift of the bandedges of GaAs with iodine concentration and illumination level. At a nominal pH of 0, the stabilization ratio S is measured close to 100% (80%) for n-GaAs in contact with a 7M (2M) NaI solution, respectively. Under illumination, the I-/I3-redox level is found to be favorably located near midgap. Kinetic analysis of the competing hole reactions yields a satisfactory simulation of S vs. I concentration. The hole capture by reduced species is found to be proportional to the concentration of iodide ions, not to their activity, in contrast to expectation. Furthermore, it is shown that chemisorbed Ru 3+ cations act as a catalyst for hole transfer and thus improve the stability of n-GaAs in 7M NaI solution.) unless CC License in place (see abstract).ABSTRACT A general mathematical model for studying the kinetics of electrochemical reactions at a rotating disk electrode under steady-state potentiostatic conditions is presented. The model, apart from predicting the net and partial current densities at given values of the applied potential, the ohmic potential drop, and the concentration and potential profiles in the solution, also accounts for homogeneous reactions of any order in the solution and noncharge transfer reactions at the electrode surface. The versatility of the model is demonstrated by the application of the model to a variety of complex reaction schemes.

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Metal Filmed‐Semiconductor Photoelectrochemical Cells

Cited by 52 publications

References 5 publications

Heterojunction Photoelectrodes: IV . Electrochemistry and Photoelectrochemistry at Indium Tin Oxide/Nonaqueous Electrolyte Interfaces

Heterojunction Photoelectrodes: IV . Electrochemistry and Photoelectrochemistry at Indium Tin Oxide/Nonaqueous Electrolyte Interfaces

Metal oxide coated p–n junction silicon electrodes for photoelectrochemical solar energy conversion

Stabilization of n ‐ GaAs in Acidic Concentrated Iodide Electrolytes

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