2013
DOI: 10.1016/j.tsf.2013.04.114
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Metal-doped ZnS(O) thin films on glass substrates using chemical bath deposition

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Cited by 25 publications
(12 citation statements)
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“…The decrease of the band gap is related to the increase of ZnS crystallite size. Our results are consistent with the reported CBD ZnS optical band gap values ranging from 3.62 to 3.93 eV[14][15][16][17]21].Fig.7 illustrates the room temperature PL spectra of the CBD ZnS single layer thin films deposited for different durations. The spectra show that the PL intensity is dependent on deposition time.…”
supporting
confidence: 90%
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“…The decrease of the band gap is related to the increase of ZnS crystallite size. Our results are consistent with the reported CBD ZnS optical band gap values ranging from 3.62 to 3.93 eV[14][15][16][17]21].Fig.7 illustrates the room temperature PL spectra of the CBD ZnS single layer thin films deposited for different durations. The spectra show that the PL intensity is dependent on deposition time.…”
supporting
confidence: 90%
“…Various methods have been used to prepare ZnS thin films, such as magnetron sputtering [6], plasma-assisted metalorganic chemical vapor deposition [7], chemical bath deposition (CBD) [1][2][3][4][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22], electro-deposition [23] and pulsed-laser deposition [24]. Among these methods, the CBD technique is usually employed because it is very simple, cost effective, reproducible and can be used to deposit large area at moderate temperature.…”
Section: Introductionmentioning
confidence: 99%
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“…chemical bath deposition but without a surface capping agent. In addition, several reports have been published on optical studies of metal (Cu, Mn, Ni and Co) doped ZnS [17][18][19][20][21] thin films by the CBD method. However, to the best of our knowledge, magnetic studies on iron doped CBD ÀZnS thin films have never been reported before.…”
Section: Introductionmentioning
confidence: 99%
“…Zinc Sulphide (ZnS) belongs to a typical n-type semiconductor of II-VI semiconductors family [1][2][3]. It has a wide direct band gap of 3.6 eV and exciton binding energy of 40 meV at room temperature [4]. Because of its broad band gap energy, it is mostly used in blue shift light emitting diodes [5,6].…”
Section: Introductionmentioning
confidence: 99%