Metal contact and carrier transport in single crystalline CH3NH3PbBr3 perovskite

Lin, Chun‐Ho; Li, Tingyou; Cheng, Bin; Liu, Changxu; Yang, Chih‐Wen; Ke, Jr‐Jian; Wei, Tang; Li, Lain‐Jong; Fratalocchi, Andrea; He, Jr‐Hau

doi:10.1016/j.nanoen.2018.09.049

Cited by 30 publications

(22 citation statements)

References 63 publications

(27 reference statements)

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“…[155] The contrary interface properties are believed as a result of different preparation methods of MAPbI 3 and Au electrodes, which may cause different levels of interfacial reactions. A similar phenomenon was also found for MAPbBr 3 /Au, where both ohmic [101,157] and Schottky [115,158] types were reported in the literature. In other cases, MAPbBr 3 / Cr and CsPbBr 3 /Au ohmic junctions have been demonstrated for the application of fast photodetection and field-effect transistor (FET).…”

Section: Formation Of Ohmic Contactsupporting

confidence: 85%

Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces

Lin

Guan

et al. 2022

Advanced Materials

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Contact engineering is a prerequisite for achieving desirable functionality and performance of semiconductor electronics, which is particularly critical for organic–inorganic hybrid halide perovskites due to their ionic nature and highly reactive interfaces. Although the interfaces between perovskites and charge‐transporting layers have attracted lots of attention due to the photovoltaic and light‐emitting diode applications, achieving reliable perovskite/electrode contacts for electronic devices, such as transistors and memories, remains as a bottleneck. Herein, a critical review on the elusive nature of perovskite/electrode interfaces with a focus on the interfacial electrochemistry effects is presented. The basic guidelines of electrode selection are given for establishing non‐polarized interfaces and optimal energy level alignment for perovskite materials. Furthermore, state‐of‐the‐art strategies on interface‐related electrode engineering are reviewed and discussed, which aim at achieving ohmic transport and eliminating hysteresis in perovskite devices. The role and multiple functionalities of self‐assembled monolayers that offer a unique approach toward improving perovskite/electrode contacts are also discussed. The insights on electrode engineering pave the way to advancing stable and reliable perovskite devices in diverse electronic applications.

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Section: Formation Of Ohmic Contactsupporting

confidence: 85%

Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces

Lin

Guan

et al. 2022

Advanced Materials

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“…For example, the quality, cost, reliability, and stability of metal contacts in PD devices must be more carefully investigated to ensure efficient charge transport and achieve better device performance. [314] The possible damages to vulnerable MHPs caused by nanofabrication processes, such as solvent processing and lithography, should be further reduced to prevent device degradation in mass production. [315,316] As for device performance, many lowdimensional MHP-based PD devices are still facing the tradeoffs between, for example, light-harvesting and transparency, stability and performance, and cost and efficiency.…”

Section: Discussionmentioning

confidence: 99%

Low‐Dimensional Metal Halide Perovskite Photodetectors

et al. 2020

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Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record‐breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high‐performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low‐dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low‐dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low‐dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low‐dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low‐dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low‐dimensional MHP‐based PDs in the future.

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“…A recent report shows that single crystalline CH 3 NH 3 PbBr 3 perovskite features Schottky junction with barriers of 0.17, 0.38, and 0.47 eV, when contacts with Au, Pt, and Ti electrodes, respectively. [ 186 ] Furthermore, because of the interface states, the surface pinning effect occurs, which causes the charge rearrangement at perovskite/metal junction interface. Up to date, most of perovskite based Ohmic contacts still need the assistance of hole and electron transport materials.…”

Section: Electronic Device Fabricationmentioning

confidence: 99%

“…Hysteresis effect is another crucial challenge for perovskites electronics, which can be attributed to trap states, ions migration, ferroelectricity, and interfacial interaction. [ 186 ] Besides improving the quality of perovskite materials to reduce defects and mobile ions, recent research showed that the development of suitable contact engineering can suppress the interfacial recombination and reduce the hysteresis effects. Au is the most used metal for perovskite electronics.…”

Section: Electronic Device Fabricationmentioning

confidence: 99%

Halide Perovskites: A New Era of Solution‐Processed Electronics

et al. 2021

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Organic–inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from solar cells to light‐emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up‐to‐date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite‐based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite‐based electronics as a competitive and feasible technology are highlighted.

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Metal contact and carrier transport in single crystalline CH3NH3PbBr3 perovskite

Cited by 30 publications

References 63 publications

Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces

Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces

Low‐Dimensional Metal Halide Perovskite Photodetectors

Halide Perovskites: A New Era of Solution‐Processed Electronics

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