Metal Chalcogenides: Thermoelectric Enhancement of Different Kinds of Metal Chalcogenides (Adv. Energy Mater. 15/2016)

Han, Chao; Sun, Qiao; Li, Zhen; Dou, Shi Xue

doi:10.1002/aenm.201670091

Cited by 9 publications

(10 citation statements)

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“…The results achieved up to here are well summarized combining the electric and thermal transport properties in the dimensionless figure of merit, zT (Figure ). For the ordered sample, zT ∼ 0.05 is in agreement with the values commonly reported in literature, whereas zT ∼ 0.5 was observed for the disordered CTS polymorphs above 700 K, which is fairly high for an undoped material . In particular, as demonstrated by our results, the enhanced zT for the disordered CTS is an attribute of its high PF and ultralow thermal conductivity.…”

Section: Resultsmentioning

confidence: 99%

“…Thermoelectric (TE) materials attract increasing interest in applications involving thermal gradients for durable, noise-free, and scalable solid-state power generators and coolers. − Performing TE devices require an optimal combination of propertiesSeebeck coefficient ( S ), electrical conductivity (σ), and thermal conductivity ( k )to maximize the figure of merit, zT = TS 2 σ/ k . Therefore, an ideal TE material would require a high power factor (PF = S 2 σ) and a low k (involving an electronic ( k e ) and a lattice ( k l ) component).…”

Section: Introductionmentioning

confidence: 99%

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Experimental and Ab Initio Study of Cu₂SnS₃ (CTS) Polymorphs for Thermoelectric Applications

et al. 2020

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Cu2SnS3 (CTS) is a medium-temperature, ecofriendly, p-type thermoelectric material known for phonon-glass-electron-crystal characteristic. In the present work, ordered and disordered CTS samples were prepared from elemental powders, and their electronic and vibrational properties were systematically investigated by experimental methods and ab initio calculations. The disordered CTS polymorph presents a higher power factor, PF ∼ 1.5 μW/K2 cm, than the ordered and stable phase, PF ∼ 0.5 μW/K2 cm, above 700 K, as an effect of a smaller band gap and higher carrier concentration. Most importantly, the disordered CTS shows an ultralow thermal conductivity, k ∼ 0.4–0.2 W/m K, as compared to ordered, k ∼ 1.0–0.4W/m K, in the temperature range of 323–723 K. The combined effect of a higher PF and lower k results in a higher figure of merit, zT ∼ 0.5 at 723 K, obtained for disordered CTS without resorting to chemical alloying. It turns out that structural disorder contributes to the suppression of thermal conductivity. While group velocity of acoustic phonons, as shown both by experiments and ab initio calculations, is similar in the two polymorphs, a strong anharmonicity characterizes the disordered CTS, resulting in the presence of low-lying optical modes acting as traps for heat transmission. Density functional theory/density functional perturbation theory simulations and nuclear inelastic scattering combined with high-resolution diffraction studies of the lattice parameters reveal details of phonon–phonon interactions in CTS with unprecedented effectiveness.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Experimental and Ab Initio Study of Cu₂SnS₃ (CTS) Polymorphs for Thermoelectric Applications

et al. 2020

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“…The dimensionless figure‐of‐merit characterizes a TE material performance, ZT = σS 2 T ( k el + k lat ) −1 , where σ, S , k el , k lat , and T are the electrical conductivity, Seebeck coefficient, electronic thermal conductivity, lattice thermal conductivity, and the absolute temperature, respectively. Traditional TE modules include Bi 2 Te 3 ‐based devices for a room or near room temperature application [ 3 ] due to their considerably high power factor (PF). [ 2,4,5 ] An ideal TE material possesses low thermal conductivity coupled with enhanced Seebeck coefficient and electrical conductivity.…”

Section: Introductionmentioning

confidence: 99%

“…Bi 2 Te 3 topological insulators remain the best room temperature (RT) TE materials due to their admiring TE performance. [ 3 ] Physical properties of materials are characteristic of the atomic arrangement and how it can accommodate defects in the crystal structure. [ 6,7 ] Creating lattice disorder (strain, dislocation), via doping is useful in reducing the K T .…”

Section: Introductionmentioning

confidence: 99%

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Musah

Novitskii

Serhiienko

et al. 2021

Adv Elect Materials

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Bismuth chalcogenides are promising materials for thermoelectric (TE) application due to their high power factor (product of the square of the Seebeck coefficient and electrical conductivity). However, their high thermal conductivity is an issue of concern. Single doping has proven to be useful in improving TE performance in recent years. Here, it is shown that dual isovalent doping shows the synergistic effect of thermal conductivity reduction and electron density control. The insertion of large atoms in the layered Bi2Te3 structure distorts the crystal lattice and contributes significantly to phonon scattering. The ultralow thermal conductivity (KT = 0.35 W m−1 K−1 at 473 K) compensates for the low power factor and thus enhances TE performance. The density functional theory electronic structure calculation results reveal deep defects states in the valence band, which influences the electronic transport properties of the system. Therefore, the dual dopants (indium and antimony) show a coupled effect of improvement in the density of state near the Fermi level and reduction in the conduction band minimum, thus enhancing electron density. Numerically, it is demonstrated that the dual doping favors acoustic phonon scattering and thus drastically reduces the thermal conductivity.

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“…The exponential growth in the Internet of Things demands a large‐scale, affordable, and uninterrupted power supply. Compared with other potential power sources, such as solar and piezoelectric devices, f‐TEGs can continuously generate electricity from body/ambient thermal energy without the need for mechanical motion or sunlight . Nevertheless, the low thermoelectric power factor of printed flexible films compared with that of their rigid and bulk counterparts remains a major obstacle in applying f‐TEGs in a broad range of energy harvesting and cooling applications .…”

Section: Introductionmentioning

confidence: 99%

Flexible Thermoelectric Devices of Ultrahigh Power Factor by Scalable Printing and Interface Engineering

Varghese

Dun

Kempf

et al. 2019

Adv Funct Materials

120

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Printing is a versatile method to transform semiconducting nanoparticle inks into functional and flexible devices. In particular, thermoelectric nanoparticles are attractive building blocks to fabricate flexible devices for energy harvesting and cooling applications. However, the performance of printed devices are plagued by poor interfacial connections between nanoparticles and resulting low carrier mobility. While many rigid bulk materials have shown a thermoelectric figure of merit ZT greater than unity, it is an exacting challenge to develop flexible materials with ZT near unity. Here, a scalable screen-printing method to fabricate high-performance and flexible thermoelectric devices is reported. A tellurium-based nanosolder approach is employed to bridge the interfaces between the BiSbTe particles during the postprinting sintering process. The printed BiSbTe flexible films demonstrate an ultrahigh room-temperature power factor of 3 mW m −1 K −2 and ZT about 1, significantly higher than the best reported values for flexible films. A fully printed thermoelectric generator produces a high power density of 18.8 mW cm −2 achievable with a small temperature gradient of 80 °C. This screen-printing method, which directly transforms thermoelectric nanoparticles into high-performance and flexible devices, presents a significant leap to make thermoelectrics a commercially viable technology for a broad range of energy harvesting and cooling applications.

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Metal Chalcogenides: Thermoelectric Enhancement of Different Kinds of Metal Chalcogenides (Adv. Energy Mater. 15/2016)

Cited by 9 publications

References 0 publications

Experimental and Ab Initio Study of Cu₂SnS₃ (CTS) Polymorphs for Thermoelectric Applications

Experimental and Ab Initio Study of Cu₂SnS₃ (CTS) Polymorphs for Thermoelectric Applications

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Flexible Thermoelectric Devices of Ultrahigh Power Factor by Scalable Printing and Interface Engineering

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Metal Chalcogenides: Thermoelectric Enhancement of Different Kinds of Metal Chalcogenides (Adv. Energy Mater. 15/2016)

Cited by 9 publications

References 0 publications

Experimental and Ab Initio Study of Cu2SnS3 (CTS) Polymorphs for Thermoelectric Applications

Experimental and Ab Initio Study of Cu2SnS3 (CTS) Polymorphs for Thermoelectric Applications

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi2Te3 Material for Enhanced Thermoelectric Properties

Flexible Thermoelectric Devices of Ultrahigh Power Factor by Scalable Printing and Interface Engineering

Contact Info

Product

Resources

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Experimental and Ab Initio Study of Cu₂SnS₃ (CTS) Polymorphs for Thermoelectric Applications

Experimental and Ab Initio Study of Cu₂SnS₃ (CTS) Polymorphs for Thermoelectric Applications

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties