Liquid-phase bonding is a technologically important method to fabricate high-performance metal/ ceramic heterostructures used for power electronic devices. However, the atomic-scale mechanisms of how these two dissimilar crystals specifically bond at the interfaces are still not well understood.Here we analyse the atomically-resolved structure of a liquid-phase bonded heterointerface between Al alloy and AlN single crystal using aberration corrected scanning transmission electron microscopy (STEM). In addition, energy-dispersive X-ray microanalysis, using dual silicon drift X-ray detectors in STEM, was performed to analyze the local chemistry of the interface. We find that a monolayer of MgO is spontaneously formed on the AlN substrate surface and that a polarity-inverted monolayer of AlN is grown on top of it. Thus, the Al alloy is bonded with the polarity-inverted AlN monolayer, creating a complex atomic-scale layered structure, facilitating the bonding between the two dissimilar crystals during liquid-phase bonding processes. Density-functional-theory calculations confirm that the bonding stability is strongly dependent on the polarity and stacking of AlN and MgO monolayers. Understanding the spontaneous formation of layered transition structures at the heterointerface will be key in fabricating very stable Al alloy/AlN heterointerface required for high reliability power electronic devices.Heterostructures between metals and ceramics have been widely used for power electronic devices requiring both high thermal performance and reliability in harsh environments. Since the interfaces play critical roles in many properties such as mechanical strength, thermal conductivity and dielectric strength, a fundamental understanding of the interface structure and the interface formation mechanism is crucially important. So far, several experimental and theoretical studies on metal/ceramic interfaces have been performed, down to atomistic dimensions [1][2][3][4][5][6] . These studies suggested that there are several factors affecting the structures of heterointerfaces, such as lattice mismatches, chemical bonding states and dopant/impurity segregation. However, one of the most important aspects when considering the formation of heterointerfaces is the bonding process 1,7,8 . Thus, in order to understand and control the heterointerface structures and their resultant properties, the actual bonding processes must be considered.Aluminum nitride (AlN) is considered one of the most important materials for power electronic device applications due to its high thermal conductivity, low thermal expansion coefficient and nontoxic nature 9 . Metal aluminum (Al)/AlN heterostructures, fabricated by a direct bonding aluminum (DBA), are now widely used in automobiles as high power modules which can perform under harsh thermal stress conditions 10 . In DBA, the system is heated near the melting point of Al metal to facilitate liquid phase bonding between the molten Al and the AlN substrate. The melting temperature of Al metal can be decre...