2010
DOI: 10.1063/1.3318263
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Metal-catalyzed crystallization of amorphous carbon to graphene

Abstract: Metal-catalyzed crystallization of amorphous carbon to graphene by thermal annealing is demonstrated. In this “limited source” process scheme, the thickness of the precipitated graphene is directly controlled by the thickness of the initial amorphous carbon layer. This is in contrast to chemical vapor deposition processes, where the carbon source is virtually unlimited and controlling the number of graphene layers depends on the tight control over a number of deposition parameters. Based on the Raman analysis,… Show more

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Cited by 251 publications
(222 citation statements)
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“…It was hoped that this approach would provide films of quality comparable to those achieved by CVD but with better control over film thickness ͑since the carbon supply is fixed and finite͒. Our own results and those of Zheng et al 7 indicate that continuous films of few-layer graphene may be produced with this approach under certain optimized conditions. The present work focuses on the kinetics and mechanism of multilayer graphene formation in a-C/Ni bilayer structures comprising a top layer of Ni over bottom layer of a-C disposed on a thermally oxidized Si substrate.…”
mentioning
confidence: 69%
“…It was hoped that this approach would provide films of quality comparable to those achieved by CVD but with better control over film thickness ͑since the carbon supply is fixed and finite͒. Our own results and those of Zheng et al 7 indicate that continuous films of few-layer graphene may be produced with this approach under certain optimized conditions. The present work focuses on the kinetics and mechanism of multilayer graphene formation in a-C/Ni bilayer structures comprising a top layer of Ni over bottom layer of a-C disposed on a thermally oxidized Si substrate.…”
mentioning
confidence: 69%
“…According to dissolve precipitate mechanism, it was proposed that a-C diffused into the metal particle at elevated temperatures followed by their precipitation as graphene on the free surface during the cool-down step as the solid solubility limit is reached (Schneider 2011). Given a small metallic particle and a long annealing time, the active carbon species migrate to the top surface and nucleate there (Zheng et al 2010). As shown in Fig.…”
Section: Proposed Mechanisms Involved In Formation Of Graphenementioning
confidence: 99%
“…High-quality graphene with a large area can be prepared on substrates of a catalytic transition metal -such as Ni or Cu -by thermal chemical vapour deposition (CVD) [7], [8]. Good quality graphene and direct control of the number of layers are achieved using the methods of the dosed deposition of amorphous carbon under the layer of Ni catalyst on Si/SiO 2 substrate [9], ion implantation of carbon clusters in the Ni catalyst layer [10], and pulsed laser carbon deposition [11]. Graphene can also be obtained using Ni powder as a catalyst in the thermal decomposition of SiC powder [12] and by pyrolysis of poly(methyl methacrylate) on particles of Ni powder [13].…”
Section: Introductionmentioning
confidence: 99%