Metaheuristic-based decision maker framework for the development of multispectral IGZO thin-film phototransistors

Ferhati, H.; Djeffal, F.; Drissi, L.B.

doi:10.1016/j.jsamd.2021.100414

Cited by 3 publications

(4 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The results obtained from our study highlight the potential of the proposed design methodology as an alternative approach for creating affordable and high performance nontoxic tandem cells. In addition, the proposed design methodology can be extended by incorporating global optimization techniques to select the most appropriate design parameters offering the highest photovoltaic performances [59][60][61]. The temperature can cause significant changes regarding the photovoltaic performance of the investigated LFP/SnS tandem structure.…”

Section: Current Matchingmentioning

confidence: 99%

SCAPS-FDTD simulation of 20.1 % efficient Perovskite-SnS tandem solar cell based on alternative charge transport layers and Au-nanoparticles

Maoucha,

Djeffal,

Ferhati

2023

Phys. Scr.

View full text Add to dashboard Cite

Perovskite-based tandem solar cells emerged as potential candidates for efficient photovoltaic applications. These devices exhibit high optical absorption properties and tunable direct band-gap. In this work, a novel lead-free Perovskite-SnS Tandem solar cell based on alternative charge transport layers combined with plasmonic-based light management approach is proposed. Accurate numerical investigation is carried out to assess the influence of the charge transport layers of top sub-cell on the optoelectronic properties of the tandem cell. The obtained results reveal the potential of SnO2 and CuO materials as electron and hole transport layers, respectively, demonstrating a good conduction band offset (CBO) and thereby enhanced recombination losses. Furthermore, the role of Gold-nanoparticles in enhancing absorption and light-trapping mechanisms in the bottom SnS-based sub-cell is investigated using FDTD computations. It is found that the optimized tandem cell with Au-NPs exhibits a high power conversion efficiency of 20.1%. Therefore, this work can open up new paths to boost the power conversion of Sn-based Perovskite/SnS Tandem cells for high-performance and eco-friendly photovoltaic applications.

show abstract

Section: Current Matchingmentioning

confidence: 99%

SCAPS-FDTD simulation of 20.1 % efficient Perovskite-SnS tandem solar cell based on alternative charge transport layers and Au-nanoparticles

Maoucha,

Djeffal,

Ferhati

2023

Phys. Scr.

View full text Add to dashboard Cite

show abstract

“…Multilayer structures, positioned between two-dimensional and three-dimensional materials, exhibit altered energy spectra, significantly impacting their properties compared to monolayer counterparts [17][18][19]. This is also exemplified by Bernal model bilayer graphene's distinct quantum Hall effect [20], optical responses [21] due to quadratic quasi-particle spectra at band contact sites [22,23], and Landau level gap in graphene bilayers induced by polar substrates [24].…”

Section: Introductionmentioning

confidence: 99%

Klein tunneling and Fabry-Perot resonances in the α - T ₃ bilayer with aligned stacking

Benhaida,

Drissi,

Saidi

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

This paper investigates the quantum tunneling effect on the α − T 3 bilayer with aligned stacking. An effective model is constructed to describe the properties around the triple band crossings for stacking with a vertical alignment of sites in the bilayer system. Focusing on these band crossings, it is found that while the energy spectrum remains gapless throughout, it is characterized by flat energy bands. Subsequently, the transmission coefficient, T, for Dirac quasi-electrons across a rectangular potential barrier is calculated, alongside the relationship between the transmission rate and the coupling parameter α. It is observed that super-tunnel phenomena occur at certain values of the quasiparticle energy, where the transmission is perfect regardless of the angle of incidence on the barrier, with α = 1. Furthermore, it is found that for a wide range of parameter values, the transmittance evolves monotonically and exponentially with increasing alpha. The paper also highlights the occurrence of the Klein paradox in the system, where quasiparticles approaching the barrier with zero-angle incidence exhibit ideal quantum transparency.

show abstract

“…[ 37,38 ] Another approach to enhance performance consists of depositing a metallic capping layer covering the entire TFT back channel. [ 42–44 ] This approach can reduce the charge trap density in the semiconductor back channel, primarily originating from oxygen vacancies, which increase electron scattering and reduce carrier mobility. [ 45–47 ] However, this approach suffers considerable issues since the enhanced field‐effect mobility is accompanied by an increased off‐current and more complex device manufacture.…”

Section: Introductionmentioning

confidence: 99%

“…Metal oxide (MO) thin-film transistors (MOTFTs) have attracted considerable attention in both academia and industry because of attractions such as high optical transparency in the visible region, [1][2][3] good air stability, [4][5][6] and outstanding carrier consists of depositing a metallic capping layer covering the entire TFT back channel. [42][43][44] This approach can reduce the charge trap density in the semiconductor back channel, primarily originating from oxygen vacancies, which increase electron scattering and reduce carrier mobility. [45][46][47] However, this approach suffers considerable issues since the enhanced field-effect mobility is accompanied by an increased off-current and more complex device manufacture.…”

Section: Introductionmentioning

confidence: 99%

Readily Accessible Metallic Micro‐Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors

et al. 2022

View full text Add to dashboard Cite

versus conventional amorphous silicon TFTs, as well as large area processability at low temperatures. [13][14][15][16] Furthermore, MOTFTs are less affected by short channel effects. [17][18][19] As in other transistor technologies, MOTFT performance strongly depends on the intrinsic semiconductor channel properties as well as the channel interfacial characteristics, including that of the top surface. [20][21][22] Furthermore, MOTFTs are limited by uncontrollable back channel trap densities, restricting their application in high-resolution displays, as well as 3D and virtual reality devices. [7,[23][24][25][26][27] Recently, several strategies were reported to enhance the performance of MOTFTs by adopting new device architectures, including dual gate implantation, [28][29][30] high-k insulators, [31][32][33] and semiconducting heterostructures. [34][35][36][37][38] Among these strategies, low-dimensional bi-or multilayer heterostructures of different MOs have enhanced the carrier mobility and drive current in MOTFTs. [39,40] These improvements typically originate from confined free electrons within the potential well of the heterointerface between two semiconductors having large Fermi energy differences. [41] However, although these approaches are noteworthy, limitations in available component materials and control of leakage currents have compromised the fidelity of this platform. [37,38] Another approach to enhance performance Thin-film transistors using metal oxide semiconductors are essential in many unconventional electronic devices. Nevertheless, further advances will be necessary to broaden their technological appeal. Here, a new strategy is reported to achieve high-performance solution-processed metal oxide thin-film transistors (MOTFTs) by introducing a metallic micro-island array (M-MIA) on top of the MO back channel, where the MO is a-IGZO (amorphous indium-gallium-zinc-oxide). Here Al-MIAs are fabricated using honeycomb cinnamate cellulose films, created by a scalable breath-figure method, as a shadow mask. For IGZO TFTs, the electron mobility (µ e ) increases from ≈3.6 cm 2 V −1 s −1 to near 15.6 cm 2 V −1 s −1 for optimal Al-MIA dimension/ coverage of 1.25 µm/51%. The Al-MIA IGZO TFT performance is superior to that of controls using compact/planar Al layers (Al-PL TFTs) and Au-MIAs with the same channel coverage. Kelvin probe force microscopy and technology computer-aided design simulations reveal that charge transfer occurs between the Al and the IGZO channel which is optimized for specific Al-MIA dimensions/surface channel coverages. Furthermore, such Al-MIA IGZO TFTs with a high-k fluoride-doped alumina dielectric exhibit a maximum µ e of >50.2 cm 2 V −1 s −1 . This is the first demonstration of a micro-structured MO semiconductor heterojunction with submicrometer resolution metallic arrays for enhanced transistor performance and broad applicability to other devices.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.202205871.

show abstract

Metaheuristic-based decision maker framework for the development of multispectral IGZO thin-film phototransistors

Cited by 3 publications

References 49 publications

SCAPS-FDTD simulation of 20.1 % efficient Perovskite-SnS tandem solar cell based on alternative charge transport layers and Au-nanoparticles

SCAPS-FDTD simulation of 20.1 % efficient Perovskite-SnS tandem solar cell based on alternative charge transport layers and Au-nanoparticles

Klein tunneling and Fabry-Perot resonances in the α - T ₃ bilayer with aligned stacking

Readily Accessible Metallic Micro‐Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors

Contact Info

Product

Resources

About

Metaheuristic-based decision maker framework for the development of multispectral IGZO thin-film phototransistors

Cited by 3 publications

References 49 publications

SCAPS-FDTD simulation of 20.1 % efficient Perovskite-SnS tandem solar cell based on alternative charge transport layers and Au-nanoparticles

SCAPS-FDTD simulation of 20.1 % efficient Perovskite-SnS tandem solar cell based on alternative charge transport layers and Au-nanoparticles

Klein tunneling and Fabry-Perot resonances in the α - T 3 bilayer with aligned stacking

Readily Accessible Metallic Micro‐Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors

Contact Info

Product

Resources

About

Klein tunneling and Fabry-Perot resonances in the α - T ₃ bilayer with aligned stacking