2022
DOI: 10.1038/s41467-022-33118-x
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Mesoscopic sliding ferroelectricity enabled photovoltaic random access memory for material-level artificial vision system

Abstract: Intelligent materials with adaptive response to external stimulation lay foundation to integrate functional systems at the material level. Here, with experimental observation and numerical simulation, we report a delicate nano-electro-mechanical-opto-system naturally embedded in individual multiwall tungsten disulfide nanotubes, which generates a distinct form of in-plane van der Waals sliding ferroelectricity from the unique combination of superlubricity and piezoelectricity. The sliding ferroelectricity enab… Show more

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Cited by 39 publications
(44 citation statements)
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“…transition-metal dichalcogenides (TMDs) like WTe 2 , [6][7][8][9] MoS 2 , [10][11][12][13][14][15][16] MoTe 2 , [17] ReS 2 , [18] InSe [19] and even multiwall nanotubes, [20] and amphidynamic crystal. [21] This mechanism is applicable to most 2D materials except for mono-element systems like graphene and phosphorene, as the inversion symmetry of their bilayers can always be maintained at any interlayersliding vector.…”
mentioning
confidence: 99%
“…transition-metal dichalcogenides (TMDs) like WTe 2 , [6][7][8][9] MoS 2 , [10][11][12][13][14][15][16] MoTe 2 , [17] ReS 2 , [18] InSe [19] and even multiwall nanotubes, [20] and amphidynamic crystal. [21] This mechanism is applicable to most 2D materials except for mono-element systems like graphene and phosphorene, as the inversion symmetry of their bilayers can always be maintained at any interlayersliding vector.…”
mentioning
confidence: 99%
“…Ferroelectric materials possess nonvolatile characteristics, high switching speed, and ferroelectricity with ultralow energy consumption, which is an ideal candidate to build devices integrating memory and computing function. [ 26,38–41 ] Notably, the physical properties of the neuristor inspired by biological neurons are not limited to be applied in neuromorphic computing. Logic‐in‐memory operations can be performed employing a single neuristor due to the multi‐terminal architecture and nonvolatile ferroelectric polarization, which surpasses the performance of conventional logic devices.…”
Section: Resultsmentioning
confidence: 99%
“…Ferroelectric materials possess nonvolatile characteristics, high switching speed, and ferroelectricity with ultralow energy consumption, which is an ideal candidate to build devices integrating memory and computing function. [26,[38][39][40][41] Notably, the physical properties of the neuristor inspired by biological neurons are not limited to be applied in neuromorphic computing.…”
Section: Neuristor For Neuromorphic and Reconfigurable Logic-in-memor...mentioning
confidence: 99%
“…A consequence of being rolled into multiwalled nanotubes is a loss of symmetry and the WS 2 becomes an asymmetrical crystal. This results in WS 2 NTs having new properties, including displaying a bulk photovoltaic effect, piezoelectricity and ferroelectricity [49,52,53]. APTES displays characteristic peaks at 3383cm -1 and 2974cm -1 which are related to amine NH 2 stretching.…”
Section: Resultsmentioning
confidence: 99%
“…This results in WS 2 NTs having new properties, including displaying a bulk photovoltaic effect, piezoelectricity and ferroelectricity. 49,52,53 APTES displays characteristic peaks at 3383 cm −1 and 2974 cm −1 which are related to amine NH 2 stretching. Peaks at 1604 cm −1 and 1483 cm −1 and related peaks are assigned to NH 2 deformation bending modes of amine groups, which are strongly bonded in the hydrogen to the silanol groups to form cyclic structures.…”
Section: Resultsmentioning
confidence: 99%