A photoresist (PR) that can be fabricated
in sub-10 nm patterns with the introduction of extreme ultraviolet
lithography (EUVL) is a key requirement for transistor downsizing.
To produce such ultrafine patterns, assigning small molecular components
on the edge surface is a fundamental approach; however, lightweight
constituents (PR chain) trigger severe polymer loss in unexposed regions
(dark loss) during the dissolution process, thus destroying the uniformity
of the pattern. Using computational modeling, we designed a new hybrid-type
PR that can eliminate the dark loss of the low-M
n polymer (≤5 kg/mol) by integrating the positive-tone
resist (deprotection) with the negative one (cross-linking). Through
the selective cross-linking reaction on protection side groups, chemical
linkages are generated exclusively for the unexposed chains and adequately
endure the aqueous treatment. Moreover, the accurately controlled
cross-link density enables suppression of resist swelling. Such improvements
result in the smoothing of the line edge roughness (LER) for the hybrid
pattern at the sub-10 nm scale. To set up the design rule of the proposed
system, physical correlation among the chain size–dark loss–LER
was thoroughly investigated, and the PR chain of 54-mers (10 kg/mol)
was shown to exhibit the best LER quality with the mild condition
of dark loss (≤11 mol %) and the moderate chain dimension (R
g ∼ 2 nm). The sequential multiscale
simulation used in this computational approach allows a full description
of the photochemistry in the EUVL process at the molecular level,
which involves phototriggered acid activation/diffusion, deprotection,
PR dissolution, and cross-linking reaction, and also provides reliable
LER prediction, consistent with experimental observations.