Mescoporous Nickel Titanate–Titanium Oxide Complex Material for Enhanced Energy Storage Application

Abstract

Materials need to be engineered to make them device-ready. A mescoporous, a combination of meso-and microporous, nickel titanate−titanium oxide (m-NTTO) complex has been synthesized here using a simple sol−gel method for making a solid-state binder-free supercapacitor from the as-prepared powder. The m-NTTO sample, well characterized using electron microscopy, N 2 adsorption−desorption isotherm, X-ray diffraction, and Raman spectroscopy was tested for its energy storage capabilities. The supercapacitive performance of m-NTTO is investigated through cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and galvanostatic charge−discharge (GCD). It shows a dominant electric double-layer capacitance with a total specific capacitance of 195 F/g at 10 mV/s and fast charging and slow discharging. Additionally, it exhibits high specific capacitance, excellent cyclic stability, and high retention. Using this sample, a prototype solid-state symmetric supercapacitor device has been fabricated to demonstrate excellent electrochemical performance with high specific capacitance, energy density, and power density was obtained, which suggests that the m-NTTO is suitable candidate material for energy storage application.

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Metal oxide-mixed polymer-based hybrid electrochromic supercapacitor: improved efficiency and dual band switching

“…To confirm the charge storage capability, EIS was performed (figure S6, SI) at 0 V in the frequency range 100 kHz-10 mHz with 5 mV amplitude, which shows a linear increase in the graph, indicating a pseudocapacitive nature that is in accordance with the CV curve (figure 2(a)). Further, the dominance of diffusion controlled process and surface capacitance was further evaluated using Dunn's power-law relationship [49] (equation ( 1)):…”

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“…S9, ESI †). [75][76][77] The red area in the CV curve shows the contribution of diffusion-controlled capacitance, and the blank area indicates the surface capacitive behaviour in the Co 3 O 4 //WO 3 SSFSC device (Fig. S9, ESI †) at 10 mV s À1 .…”

“…The specific capacitance of the device ( C device ) has been calculated from the GCD profile of the device using eqn (6). 75 where Δ t is the discharging time, and Δ V is the potential window. A maximum of 66.5 mF cm −2 specific capacitance of the device was observed at 0.1 mA cm −2 (Fig.…”