Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs

Shen, Chao; Ng, Tien Khee; Kang, Chun Hong; Ooi, Boon S.

doi:10.1364/acp.2013.aw3k.3

Asia Communications and Photonics Conference 2013 2013

DOI: 10.1364/acp.2013.aw3k.3

|View full text |Cite

Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs

Chao Shen¹,

Tien Khee Ng²,

Chun Hong Kang³

et al.

Abstract: Abstract:The mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Publication Types

Select...

Relationship

Self Cite0

Independent0

Authors

Journals

Cited by 0 publications

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

No citations

Set email alert for when this publication receives citations?

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs

Abstract: Abstract:The mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding.

Cited by 0 publications

References 4 publications

No citations

Contact Info

Product

Resources

About