Mercury telluride—a zero-gap semiconductor

Berchenko, N. N.; Pashkovskiǐ, M. V.

doi:10.1070/pu1976v019n06abeh005265

Cited by 32 publications

(25 citation statements)

References 15 publications

(5 reference statements)

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“…In contrast to Bi 2 X 3 compounds (X = Se or Te), band inversion in bulk α-Sn involves the second valence band (VB) Γ − 7 and conduction band (CB) Γ + 8 , which reveal s-like and p-like character, respectively 11 . Such band order is also typical of HgTe 12,13 and some half-Heusler compounds 14 and results in fact in a double band inversion with a pair of TSSs of different wavefunction localization character 6 . Most of the substrates available for epitaxial growth provide an in-plane compressive strain for α-Sn films, which drives them into a Dirac semimetal phase 6,15 with both TSSs being fully degenerate with bulk states.…”

Section: Introductionmentioning

confidence: 85%

Tailoring the topological surface state in ultrathin α -Sn(111) films

et al. 2019

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We report on the electronic structure of α-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200 meV below the Fermi level in 10-nm-thick films, which enables the observation of the hybridization gap opening at the Dirac point of the TSS for thinner films. The crossover to a quasi-2D electronic structure is accompanied by a full gap opening at the Brillouin zone center, in agreement with our density functional theory calculations. We further identify the thickness regime of α-Sn films where the hybridization gap in TSS coexists with the topologically non-trivial electronic structure and one can expect the presence of a 1D helical edge states.

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Section: Introductionmentioning

confidence: 85%

Tailoring the topological surface state in ultrathin α -Sn(111) films

et al. 2019

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“…Furthermore, there are other mechanisms besides SOC which can give rise to a band inversion. For example, strained bulk HgTe is a 3D TI 27 in which the band inversion is caused by other relativistic corrections 28 . Also in type-II InAs/GaSb heterostructures, one can achieve a band inversion from confinement 29 .…”

Section: Discussionmentioning

confidence: 99%

Gapless interface states at the junction between two topological insulators

Beule

Partoens

2013

Phys. Rev. B

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We consider a junction between two topological insulators, and calculate the properties of the interface states with an effective low energy Hamiltonian for topological insulators with a single cone on the surface. This system bears a close resemblance to bilayer graphene, as both result from the hybridization of Dirac cones. We find gapless interface states not only when the helicity direction of the topological surface states are oppositely oriented, but they can also exist if they are equally oriented. Furthermore, we find that the existence of the interface states can be understood from the closing of the bulk gap when the helicity changes orientation. Recently, superluminal tachyonic excitations were also claimed to exist at the interface between topological insulators. However, here we show that these interface states do not exist.

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“…Other materials such as grey tin 149 and mercury-telluride 150 have been shown to possess zero-gap properties with a parabolic dispersion relation. In the case of mercury telluride the size of the energy gap can be adjusted by replacing atoms of mercury with the lighter element cadmium.…”

Section: Weyl Semimetalsmentioning

confidence: 99%

From Graphene and Topological Insulators to Weyl Semimetals

Hills

Brada

Liu

et al. 2015

Symmetry, Spin Dynamics and the Properties of Nanostructures

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Here we present a short introduction into physics of Dirac materials. In particular we review main physical properties of various two-dimensional crystals such as graphene, silicene, germanene and others. We comment on the origin of their buckled two-dimensional shape, and address the issues created by Mermin-Wagner theorem prohibiting the existence of strictly two-dimensional, flat crystals. Then we describe main ideas which were leading to the discovery of two and three-dimensional topological insulators and Weyl fermions. We describe some of their outstanding electronic properties which have been originating due to the existence of the Dirac gapless spectrum. We also compare simplest devices made of Dirac materials. Analogies and differences between Dirac materials and optics are also discussed.

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Mercury telluride—a zero-gap semiconductor

Cited by 32 publications

References 15 publications

Tailoring the topological surface state in ultrathin α -Sn(111) films

Tailoring the topological surface state in ultrathin α -Sn(111) films

Gapless interface states at the junction between two topological insulators

From Graphene and Topological Insulators to Weyl Semimetals

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