MEMS residual stress characterization: methodology and perspective

Chen, Kuo-Shen; Ou, Kuang-Shun

doi:10.1016/b978-0-12-817786-0.00039-6

Cited by 5 publications

(4 citation statements)

References 102 publications

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“…In addition to the stress caused by the distributed load of the beam, the reason for the large deformation of the device comes from the residual stress. Residual stress can be defined as the stress left in the material after processing without external force or thermal gradient [24]. Stress will be generated in the films due to the difference in lattice constants between silicon nitride, silicon oxide, and silicon.…”

Section: Experimental Methods and Stress Analysismentioning

confidence: 99%

Optimization and Fabrication of MEMS suspended structures for nanoscale thermoelectric devices

Wei¹,

Wei²,

Kuai³

et al. 2022

Nanotechnology

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By eliminating the influence of the substrate on parasitic thermal resistance, MEMS suspended structures become one of the accurate nanoscale thermoelectric performance evaluation devices. However, the process of MEMS suspended thermoelectric devices is complex, and its multilayer suspended structure is easy to fracture due to large stress. As a result, optimizing the design of suspended structures is critical in order to reduce manufacturing complexity and increase yield. In this study, finite element simulation is used to investigate the impacts of varying structures and sizes on the stress of MEMS suspended devices. The maximum stress and average stress of silicon nanomaterials are lowered by 90.89% and 92.35%, respectively, by optimizing the structure and size of the beams and nanobelt. Moreover, MEMS suspended devices of various structures are successfully manufactured. It not only increases the yield to more than 70% but also decreases the impact of strain on thermoelectric performance and can be used to create suspended devices with integrated silicon microstrips.

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Section: Experimental Methods and Stress Analysismentioning

confidence: 99%

Optimization and Fabrication of MEMS suspended structures for nanoscale thermoelectric devices

Wei¹,

Wei²,

Kuai³

et al. 2022

Nanotechnology

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“…In 1976, T. Hsu and H. Shang introduced a new approach to the bulge test (a method used to determine the material properties of thin films, such as Young's modulus, Poisson's ratios, and residual stresses [91]). This method enables the examination of the relationship between the shape of a thin shell and the stresses it undergoes when exposed to internal pressure.…”

Section: Stretch Formingmentioning

confidence: 99%

Machine Learning, Mechatronics, and Stretch Forming: A History of Innovation in Manufacturing Engineering

Grigoras,

Zichil,

Ciubotariu

et al. 2024

Machines

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This review focuses on the complex connections between machine learning, mechatronics, and stretch forming, offering valuable insights that can lay the groundwork for future research. It provides an overview of the origins and fundamentals of these fields, emphasizes notable progress, and explores the influence of these fields on society and industry. Also highlighted is the progress of robotics research and particularities in the field of sheet metal forming and its various applications. This review paper focuses on presenting the latest technological advancements and the integrations of these fields from their beginnings to the present days, providing insights into future research directions.

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“…A measurement of the residual stress can be used to determine the risks for cracking and delamination [14]. Recently, several techniques have been used to measure the mechanical stability and residual stress in membranes [15]. These include methods such as curvature measurement and bulge testing [16], [17], X-ray diffraction [18], and resonant vibrational methods [6], [19], [20].…”

mentioning

confidence: 99%

“…These include methods such as curvature measurement and bulge testing [16], [17], X-ray diffraction [18], and resonant vibrational methods [6], [19], [20]. Each technique has advantages and disadvantages [15], [19], but the method of vibrational resonance measurement offers the potential to be developed into a quick, non-destructive method of characterising the properties of membranes during production or in-situ, as well as offering the potential for identification of defects. This technique measures vibration at ultrasonic frequencies, with the resonant frequencies related to the residual stress, and the quality (Q-)factor linked to the membrane quality.…”

mentioning

confidence: 99%

Ultrasonic Inspection and Self-Healing of Ge and 3C-SiC Semiconductor Membranes

Zhou

Colston

Myronov

et al. 2020

J. Microelectromech. Syst.

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Knowledge of the mechanical properties and stability of thin film structures is important for device operation. Potential failures related to crack initiation and growth must be identified early, to enable healing through e.g. annealing. Here, three square suspended membranes, formed from a thin layer of cubic silicon carbide (3C-SiC) or germanium (Ge) on a silicon substrate, were characterised by their response to ultrasonic excitation. The resonant frequencies and mode shapes were measured during thermal cycling over a temperature range of 20-100 • C. The influence of temperature on the stress was explored by comparison with predictions from a model of thermal expansion of the combined membrane and substrate. For an ideal, non-cracked sample the stress and Q-factor behaved as predicted. In contrast, for a 3C-SiC and a Ge membrane that had undergone vibration and thermal cycling to simulate extended use, measurements of the stress and Q-factor showed the presence of damage, with the 3C-SiC membrane subsequently breaking. However, the damaged Ge sample showed an improvement to the resonant behaviour on subsequent heating. Scanning electron microscopy showed that this was due to a self-healing of sub-micrometer cracks, caused by expansion of the germanium layer to form bridges over the cracked regions, with the effect also observable in the ultrasonic inspection. [2020-0017] Index Terms-Laser ultrasound, vibration, microelectromechanical systems (MEMS), thin films. I. INTRODUCTION S OLID thin films are used in a wide variety of engineering systems, including development of micro-electromechanical systems (MEMS) and nano-electro-mechanical systems (NEMS) [1]-[4]. The suspended square thin film is a simple MEMS structure and can be used in pressure sensors, or as a platform for integrating devices for applications such as near-infrared photo-detectors, flow sensors, photonic modulators, lasers, and enhancing silicon light emission via carrier injection [5]-[10]. The use of tensile strained membranes, such as Germanium (Ge) on Silicon (Si), can change the electronic or optoelectronic properties by reducing the energy band gap [11], [12]. However, the residual stress in thin films, especially within a multilayer structure, is temperature dependent. Changes in temperature can induce mechanical Manuscript

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MEMS residual stress characterization: methodology and perspective

Cited by 5 publications

References 102 publications

Optimization and Fabrication of MEMS suspended structures for nanoscale thermoelectric devices

Optimization and Fabrication of MEMS suspended structures for nanoscale thermoelectric devices

Machine Learning, Mechatronics, and Stretch Forming: A History of Innovation in Manufacturing Engineering

Ultrasonic Inspection and Self-Healing of Ge and 3C-SiC Semiconductor Membranes

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