MEMS ion source for mass spectrometer integrated on a chip

Szyszka, Piotr; Grzebyk, Tomasz; Górecka-Drzazga, Anna; Dziuban, Jan

doi:10.1088/1742-6596/773/1/012099

Cited by 5 publications

(1 citation statement)

References 8 publications

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“…Miniature electronic devices and instruments based on free electron beam, especially those scaled down on a chip by microfabrication technologies, are attracting more and more research interest, as they show the advantages of smaller footprint and cheaper batch fabrication when compared with their traditional counterparts. To date, many such compact devices and instruments have been reported, including X-ray sources, [1][2][3][4] electron microscopes, [5,6] mass spectrometers, [7][8][9] microwave amplifiers, [10,11] field emission displays, [12][13][14][15] sensors, [16,17] etc. An electron source for generating free electron beam is required for all those miniature vacuum electronic devices and instruments.…”

Section: Introductionmentioning

confidence: 99%

Pressure Sensitivity of Electron Emission from SiO_x Tunneling Diodes and their Outstanding Emission Performance under Rough Vacuum

Zhan

Yang

et al. 2022

Adv Elect Materials

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On‐chip electron sources with low pressure‐sensitivity and outstanding emission performances under rough vacuum are highly desired for developing miniature fully encapsulated vacuum electronic devices. Here, the sensitivity of electron emission from SiOx tunneling diodes formed in electroformed SiOx to the variation of ambient vacuum pressure from ≈10−4 to ≈102 Pa is explored. Electron emission from SiOx tunneling diodes is found to be insensitive to pressure variation when the pressure is lower than ≈10−1 Pa and exhibits fast degradation above the pressure, showing much lower pressure sensitivity than field emission sources. Despite emission current degradation above ≈10−1 Pa, SiOx tunneling diodes exhibit stable and reproducible electron emission under fixed rough vacuum up to 8 Pa, and good restorability after being repeatedly exposed to air pressure. By analyzing transport current of SiOx tunneling diodes under varying ambient vacuum pressure, the degradation of emission current above ≈10−1 Pa is attributed to the widening of insulating SiOx channel in the diode due to the transformation of Si conducting filament to SiOx with increasing oxygen partial pressure.

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