Abstract:In this paper, we report a fabrication method for the formation of microelectromechanical systems (MEMS) structures with perfectly protected edges and corners in {llO}Si wafers using complementary metal oxide semiconductor (CMOS) compatible tetramethyl ammonium hydroxide (TMAH) solution. Fabrication method includes two-steps wet etching. The second step of etching is carried out after mask inversion from silicon nitride (Si3N4) to silicon dioxide (Si02) by local oxidation of silicon (LOCOS) followed by nitride… Show more
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