Memristor with a ferroelectric HfO<sub>2</sub> layer: in which case it is a ferroelectric tunnel junction

Mikheev, V. P.; Chouprik, Anastasia; Lebedinskiǐ, Yu. Yu.; Zarubin, Sergei; Markeev, Andrey M.; Zenkevich, Andrei; Negrov, Dmitrii

doi:10.1088/1361-6528/ab746d

Cited by 57 publications

(26 citation statements)

References 51 publications

(90 reference statements)

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…[50] The following HfO 2 -based FTJs references are considered: epitaxial PLD-deposited MFM-structures [20,30] and MFIM-structures, [31] sputtering-deposited MFM structures, [17,39,60,61] ALD-deposited MFM structures, [62][63][64] MFIM-structures, [18,19,49,[65][66][67][68][69][70] MFS-structures [45,71,72] and MFIS-structures. [43,69,[73][74][75][76][77] Reports of non-polarization-driven resistive switching in HfO 2 -based FTJs are not considered (Supporting Information). b) Comparison of the 1 nm Zr:HfO 2 FTJs in this work to ultrathin (sub-3 nm) HfO 2 -based FTJs and perovskite-based FTJs deposited on Si, considering polarization-driven ON/OFF conductance ratio (J ON /J OFF ) and ON current density (J ON ).…”

Section: Methodsmentioning

confidence: 99%

“…The 1-nm Zr:HfO 2 FTJ presented in this work demonstrates the largest polarization-driven TER and thinnest ferroelectric barrier reported thus far across all HfO 2 -based FTJ literature, desirable for scaled FTJ applications [50]. The following HfO 2 -based FTJs references are considered: epitaxial PLD-deposited MFM-structures[20,30] and MFIM-structures,[31] sputtering-deposited MFM structures,[17,39,60,61] ALD-deposited MFM structures,[62][63][64] MFIM-structures,[18,19,49,[65][66][67][68][69][70] MFS-structures[45,71,72] and MFIS-structures [43,69,[73][74][75][76][77]. Reports of non-polarization-driven resistive switching in HfO 2 -based FTJs are not considered (Supporting Information).…”

mentioning

confidence: 99%

See 1 more Smart Citation

One Nanometer HfO₂‐Based Ferroelectric Tunnel Junctions on Silicon

Cheema

Shanker

Hsu

et al. 2021

Adv Elect Materials

View full text Add to dashboard Cite

incompatibilities with silicon and modern semiconductor processes. [5] Since the discovery of ferroelectricity in HfO 2 -based thin films in 2011, [6] fluorite-structure binary oxides have attracted considerable interest as they are compatible with complementary metal-oxide-semiconductor (CMOS) processes. [7] Accordingly, HfO 2based ferroelectric memory has received significant attention in recent years, [1,8,9] primarily focused on charge-based ferroelectric random access memory (FeRAM) and ferroelectric field effect transistors (FeFETs). [2,10] Meanwhile, resistiveswitching materials-which exhibit electrically-induced resistance changes in metal-dielectric-metal junctions or heterostructures with multi-dielectric barriershave emerged as promising candidates for novel beyond-CMOS data-centric computing paradigms. [11][12][13] In this context, ferroelectric tunnel junctions (FTJs) present a promising energy-efficient resistive switching memory [12,13] as FTJs exploit the ferroic polarization functionality of the insulating barrier. [14] Voltage-controlled polarization-dependent tunneling through the ferroelectric layer (tunnel electroresistance, TER) can yield much larger ON/OFF conductance ratios [15,16] than, for example, current-controlled magnetic tunnel junctions, [12] another two-terminal tunneling resistive switching device.A critical requirement for FTJs is to achieve a sufficiently high tunneling current (J ON ) at the ON state to ensure that a scaled device can be read rapidly, while still exhibiting a large TER ((J ON -J OFF )/J OFF × 100%). [13] Considering the large band gap of HfO 2 (≈6 eV), the thickness of HfO 2 in the FTJ will need to be reduced to the ultrathin limit for adequate tunnel current. Tunnel junctions implementing CMOS-compatible HfO 2 -based ferroelectric barriers have been recently demonstrated, [17][18][19] but even three nanometer Zr-doped HfO 2 (Zr:HfO 2 ) barriers were found to be too thick to obtain nano-ampere level current in micron-sized capacitors. [20] Therefore, high ON current is a critical consideration; however, the increased ON state current from an ultrathin barrier will coincide with an increased OFF state current. For array-level implementations, where sneak leakage paths can lead to increased power consumption, selector devices may be required in conjunction with the FTJ memory elements to reduce such sneak currents. [13] Here, we demonstrate FTJs utilizing one nanometer Zr:HfO 2 as the ferroelectric barrier, grown by atomic layer deposition (ALD) directly on silicon, thereby scaling down the tunnel barrier ABSTRACT: In ferroelectric materials, spontaneous symmetry breaking leads to a switch-able electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new resistive switching memory which exploits polarizationdependent tunnel current across a thin ferroelectric barrier. This work integrates FTJs with com-plementary metal-oxide-semiconductor-compatible Zr-doped HfO 2 (Zr...

show abstract

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

One Nanometer HfO₂‐Based Ferroelectric Tunnel Junctions on Silicon

Cheema

Shanker

Hsu

et al. 2021

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…Recently, non-volatile field-effect transistors (NVFETs) utilizing amorphous Al 2 O 3 and ZrO 2 gate insulators were experimentally realized, which was attributed to the switchable polarization ( P ) induced by the voltage-modulation of the oxygen vacancy ( )-related dipoles [ 8 – 11 ]. The mechanism of voltage-modulation of in ferroelectric tunnel junctions was also demonstrated, which improved the tunneling electroresistance ratio of the device [ 12 ]. Compared to the polycrystalline doped-HfO 2 FeFETs, NVFETs with amorphous dielectrics exhibited significantly lower operation voltage and better linearity for multi-threshold voltage operation [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film

et al. 2022

View full text Add to dashboard Cite

We demonstrate a non-volatile field-effect transistor (NVFET) with a 3-nm amorphous HfO2 dielectric that can simulate the synaptic functions under the difference and repetition of gate voltage (VG) pulses. Under 100 ns write/erase (W/E) pulse, a memory window greater than 0.56 V and cycling endurance above 106 are obtained. The storied information as short-term plasticity (STP) in the device has a spiking post-synaptic drain current (ID) that is a response to the VG input pulse and spontaneous decay of ID. A refractory period after the stimuli is observed, during which the ID hardly varies with the VG well-emulating the bio-synapse behavior. Short-term memory to long-term memory transition, paired-pulse facilitation, and post-tetanic potentiation are realized by adjusting the VG pulse waveform and number. The experimental results indicate that the amorphous HfO2 NVFET is a potential candidate for artificial bio-synapse applications.

show abstract

“…The prosperity of memristor technology stems from the pioneering achievement of the TiO 2 memristor that is considered as one typical resistive metal oxide [18]. Considerable research efforts are therefore devoted to exploring memristor devices using various resistive materials, mainly focused on TiO 2 [19,20], HfO 2 [21,22], ZrO 2 [23,24], TaO 2 [25,26], and SiO 2 [27,28]. More importantly, aforementioned storage characteristics of the resistive RAM using metal oxides closely match the biological response of the human brain, further proving their potential for in-memory computing and neuromorphic computing applications.…”

Section: Introductionmentioning

confidence: 99%

Ab initio molecular-dynamics simulations of electronic structures and characteristics of Cu/SiO2/Pt memristive stack

Peng¹,

Wang²

2022

JOR

View full text Add to dashboard Cite

Memristor, as the fourth passive fundamental circuitry element, has recently received considerable attention due to its appealing prospect for in-memory computing and neuromorphic computing applications. Numerous memristive materials, such as metal oxides, chalcogenides, amorphous silicon, carbon, and polymer nanoparticle materials, have been under intensive research. Within the memristive families, metal oxides attain more attention due to their great scaling, fast switching speed, low power consumption, and long endurance. However, the memristive mechanism and electronic characteristics of the metal oxides still remain controversial. To address this issue, we here investigated the electronic structure and electronic characteristics of a typical memristive stack (i.e., Cu/SiO2/Pt) based on newly developed density functional theory and ab initio molecular-dynamics simulations. Calculated results reveal that the energy barriers required to be overcome for Cu ions to diffuse through Cu electrode, SiO2 active layer, and Pt electrode, are 0.6 eV, 1 eV, and 1.63 eV, respectively. This results in an overall barrier of ～ 1.63 eV for entire Cu/SiO2/Pt stack. Both ion and electron conductivities of the Cu/SiO2/Pt stack are found temperature dependent, while the electron conductivities arising from calculated density of states and band structures, is much higher than the ion conductivity. This obviously facilitates the diffusion of Cu ions and thus can explain the memristive behaviour of the studied device.

show abstract

Memristor with a ferroelectric HfO₂ layer: in which case it is a ferroelectric tunnel junction

Cited by 57 publications

References 51 publications

One Nanometer HfO₂‐Based Ferroelectric Tunnel Junctions on Silicon

One Nanometer HfO₂‐Based Ferroelectric Tunnel Junctions on Silicon

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film

Ab initio molecular-dynamics simulations of electronic structures and characteristics of Cu/SiO2/Pt memristive stack

Contact Info

Product

Resources

About

Memristor with a ferroelectric HfO2 layer: in which case it is a ferroelectric tunnel junction

Cited by 57 publications

References 51 publications

One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon

One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film

Ab initio molecular-dynamics simulations of electronic structures and characteristics of Cu/SiO2/Pt memristive stack

Contact Info

Product

Resources

About

Memristor with a ferroelectric HfO₂ layer: in which case it is a ferroelectric tunnel junction

One Nanometer HfO₂‐Based Ferroelectric Tunnel Junctions on Silicon

One Nanometer HfO₂‐Based Ferroelectric Tunnel Junctions on Silicon