Memristor-Based Nanoelectronic Computing Circuits and Architectures

Vourkas, Ioannis; Sirakoulis, Georgios Ch.

doi:10.1007/978-3-319-22647-7

Cited by 72 publications

(60 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Other circuit representations of memristors can be found elsewhere. [14][15][16][17] The convenience of this circuit to describe the behavior of memristive interfaces was tested by reproducing the dynamical behavior of metal-YBCO interfaces [10] as well as by capturing the non-trivial IV characteristics of metal-manganite junctions [11]. In the case of devices with non-negligible bulk resistance, a second ohmic element in series (R 2 ) should be considered.…”

Section: A Circuit Representation For Bipolar Memristorsmentioning

confidence: 99%

Graphical analysis of current-voltage characteristics in memristive interfaces

Enrique

2017

Journal of Applied Physics

View full text Add to dashboard Cite

A graphical representation based on the isothermal current-voltage (IV) measurements of typical memristive interfaces is presented. This is the starting point to extract relevant microscopic information of the parameters that control the electrical properties of a device based on a particular metal-oxide interface. The convenience of the method is illustrated presenting some examples were the IV characteristics were simulated in order to gain insight on the influence of the fitting parameters.

show abstract

Section: A Circuit Representation For Bipolar Memristorsmentioning

confidence: 99%

Graphical analysis of current-voltage characteristics in memristive interfaces

Enrique

2017

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Understanding the overall circuit behavior, sometimes based on collective dynamics of two properly polarized memristors, requires comprehending the switching dynamics of individual memristors first. To this end, it is worth noting that bipolar memristors with opposite polarities will tend to switch their states in a reciprocal manner [32]. Hereinafter we will refer to a memristor being forward/reversely polarized (FPM/RPM) when the voltage is applied to one terminal (top or bottom) with the opposite terminal (bottom or top) being grounded; the bottom terminal is always denoted by the thick black line in the circuit schematics.…”

Section: B Basics Of Reram-based Logic Circuitsmentioning

confidence: 99%

“…Given the need to be able to perform as many parallel computations as possible, using a different SL geometry would not work due to current leakage/sneak-paths [32], [34], which contribute to incorrect computations and/or increases in power consumption. For example, neither row nor column SLs would work with our approach.…”

Section: ) Twisted Sl Driving Patternsmentioning

confidence: 99%

Crossbar-Based Memristive Logic-in-Memory Architecture

Papandroulidakis

Vourkas

Abusleme

et al. 2017

IEEE Trans. Nanotechnology

Self Cite

View full text Add to dashboard Cite

Aquesta és una còpia de la versió draft d'un article publicat a IEEE transactions on nanotechnologyhttp://hdl.handle.net/2117/104473 Papandroulikadis, G., Vourkas, I., Abustelema, A., Sirakoulis, G., Rubio, A. Crossbar-based memristive logic-in-memory architecture. "IEEE transactions on nanotechnology", 1 Abril 2017, vol. 16, núm. 3, p. 491-501. DOI: 10.1109/TNANO.2017 © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1Abstract-The use of memristors and resistive random access memory (ReRAM) technology to perform logic computations has drawn considerable attention from researchers in recent years. However, the topological aspects of the underlying ReRAM architecture and its organization have received less attention, as the focus has mainly been on device-specific properties for functionally complete logic gates through conditional switching in ReRAM circuits. A careful investigation and optimization of the target geometry is thus highly desirable for the implementation of logic-in-memory architectures. In this paper, we propose a crossbar-based in-memory parallel processing system in which, through the heterogeneity of the resistive cross-point devices, we achieve local information processing in a state-of-the-art ReRAM crossbar architecture with vertical group-accessed transistors as cross-point selector devices. We primarily focus on the array organization, information storage, and processing flow, while proposing a novel geometry for the cross-point selection lines to mitigate current sneak-paths during an arbitrary number of possible parallel logic computations. We present an analysis of circuit resources, integration density, and logic computation parallelism and prove the proper functioning and potential capabilities of the proposed architecture through SPICE-level circuit simulations of half-adder (HA) and sum-of-products logic functions.

show abstract

“…A memristor is a nonlinear resistor that changes its state according to the charge passing through it and retains this state after an electrical bias is removed [7] [8]. It is defined as a non-volatile two terminal memory device and considered as the key element to realize high scalability and low-power designs.…”

Section: A Memristormentioning

confidence: 99%